Heterogeneous polynuclear complex for use in the chemical deposition of composite metal or metal compound thin films

Patent metadata

Field	Value
Publication number	US-10407450-B2
Application number	US-201615558011-A
Country	US
Kind code	B2
Filing date	May 9, 2016
Priority date	May 12, 2015
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

A heterogeneous polynuclear complex for use as a raw material in the chemical deposition of composite metal or composite metal thin films with the below formula. In the formula, M 1 and M 2 are mutually different transition metals, x is an integer of 0 or more and 2 or less, y is in integer of 1 or more and 2 or less, z is an integer of 1 or more and 10 or less, R 1 to R 4 are each one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less, and R 5 is a hydrogen atom, a carbonyl, an alkyl group with a carbon number of 1 or more and 7 or less, an allyl group or an allyl derivative. The heterogeneous polynuclear complex allows a composite metal thin film or a composite metal compound thin film containing a plurality of metals to be formed from a single raw material.

First claim

The invention claimed is:

1. A chemical deposition raw material for producing a composite metal thin film or a composite metal compound thin film by a chemical deposition method, comprising a heterogeneous polynuclear complex in which as ligands, at least a diimine (L) and a carbonyl are coordinated to a first transition metal (M 1 ) and a second transition metal (M 2 ) as central metals, the heterogeneous polynuclear complex being represented by the following formula:

wherein M 1 and M 2 are different transition metals; x is an integer of 0 or more and 2 or less, y is an integer of 1 or more and 2 or less, and z is an integer of 1 or more and 10 or less; R 1 to R 4 are each one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less; and R 5 is a hydrogen atom, a carbonyl, an alkyl group with a carbon number of 1 or more and 7 or less, an allyl group or an allyl derivative.

2. The chemical deposition raw material according to claim 1 , wherein x is 1, y is 1 and z is n +2, where n is the number of carbonyl groups bound to second transition metal M 2 , the chemical deposition raw material comprising a heterogeneous polynuclear complex represented by the following formula:

wherein M 1 and M 2 are different transition metals; n is 3 or more and 6 or less; Each of R 1 and R 4 is an alkyl group with a carbon number of 1 or more and 4 or less, and each of R 2 and R 3 is a hydrogen atom, or an alkyl group with a carbon number of 1 or more and 3 or less; and R 5 is a carbonyl, or an alkyl group with a carbon number of 1 or more and 4 or less.

3. The chemical deposition raw material according to claim 2 , wherein each of R 1 and R 4 is one of an ethyl group, a propyl group and a butyl group.

4. The chemical deposition raw material according to claim 2 , wherein each of R 2 and R 3 is one of a hydrogen atom, a methyl group and an ethyl group.

5. The chemical deposition raw material according to claim 2 , wherein R 5 is a carbonyl group, methyl group, ethyl group or propyl group.

6. A chemical deposition method of a composite metal thin film or a composite metal compound thin film, comprising preparing a raw material gas by vaporizing a raw material defined in claim 2 including a heterogeneous polynuclear complex, and heating the raw material gas while introducing the raw material gas to a substrate surface to deposit a composite metal thin film or a composite metal compound thin film.

7. The chemical deposition raw material according to claim 1 , wherein the transition metal is one of Mn, Fe, Co, Ni, Cu, Nb, Mo, Ru, Rh, Ta, W, Ir and Pt.

8. The chemical deposition raw material according to claim 7 , wherein each of R 1 and R 4 is one of an ethyl group, a propyl group and a butyl group.

9. The chemical deposition raw material according to claim 7 , wherein each of R 2 and R 3 is one of a hydrogen atom, a methyl group and an ethyl group.

10. The chemical deposition raw material according to claim 7 , wherein R 5 is a carbonyl group, methyl group, ethyl group or propyl group.

11. A chemical deposition method of a composite metal thin film or a composite metal compound thin film, comprising preparing a raw material gas by vaporizing a raw material defined in claim 7 including a heterogeneous polynuclear complex, and heating the raw material gas while introducing the raw material gas to a substrate surface to deposit a composite metal thin film or a composite metal compound thin film.

12. The chemical deposition raw material according to claim 1 , wherein M 1 is one of Ru, Mn and Fe, M 2 is one of Mn, Fe, Co and Ni, and M 1 and M 2 are different.

13. The chemical deposition raw material according to claim 12 , wherein each of R 1 and R 4 is one of an ethyl group, a propyl group and a butyl group.

14. The chemical deposition raw material according to claim 12 , wherein each of R 2 and R 3 is one of a hydrogen atom, a methyl group and an ethyl group.

15. A chemical deposition method of a composite metal thin film or a composite metal compound thin film, comprising preparing a raw material gas by vaporizing a raw material defined in claim 12 including a heterogeneous polynuclear complex, and heating the raw material gas while introducing the raw material gas to a substrate surface to deposit a composite metal thin film or a composite metal compound thin film.

16. The chemical deposition raw material according to claim 1 , wherein each of R 1 and R 4 is one of an ethyl group, a propyl group and a butyl group.

17. The chemical deposition raw material according to claim 16 , wherein each of R 2 and R 3 is one of a hydrogen atom, a methyl group and an ethyl group.

18. The chemical deposition raw material according to claim 1 , wherein each of R 2 and R 3 is one of a hydrogen atom, a methyl group and an ethyl group.

19. The chemical deposition raw material according to claim 1 , wherein R 5 is a carbonyl group, methyl group, ethyl group or propyl group.

20. A chemical deposition method of a composite metal thin film or a composite metal compound thin film, comprising preparing a raw material gas by vaporizing a raw material defined in claim 1 including a heterogeneous polynuclear complex, and heating the raw material gas while introducing the raw material gas to a substrate surface to deposit a composite metal thin film or a composite metal compound thin film.

Assignees

• Tanaka Precious Metal Ind

Inventors

• Harada Ryosuke
• SHIGETOMI Toshiyuki
• Nabeya Shunichi
• Suzuki Kazuharu
• Kumakura Akiko
• Aoyama Tatsutaka
• Sone Takayuki

Classifications

• H10P14/69397

  the material containing two or more metal elements · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/60

  of insulating materials · CPC title

• H10P14/42

  using a gas or vapour · CPC title

• C23C16/18 Primary

  from metallo-organic compounds · CPC title