Methods to produce ultra-thin metal nanowires for transparent conductors

Patent metadata

Field	Value
Publication number	US-10406602-B2
Application number	US-201515513023-A
Country	US
Kind code	B2
Filing date	Sep 25, 2015
Priority date	Sep 26, 2014
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

The disclosure provides methods to produce ultrathin metal nanowires, the metal nanowires produced therefrom, and the use of the metal nanowires as transparent conductors.

First claim

What is claimed is:

1. A method to synthesize an ultrathin copper elongated nanostructure having a diameter less than 65 nanometers with an aspect ratio greater than 1, and a face-centered cubic structure, comprising:
forming a reaction mixture comprising a silane-based reducing agent, a copper metal salt and a surface ligand, wherein the surface ligand may also be a solvent; and
heating and maintaining the reaction mixture at a temperature from 160° C. to 200° C. between 1 to 48 hours with or without stirring.

2. The method of claim 1 , wherein the copper metal salt is selected from Cul, CuBr, CuCI, CuF, CuSCN, CuCl 2 , CuBr 2 , CuF 2 , CuOH 2 , Cu-D-gluconate, CuMoO 4 , Cu(NO 3 ) 2 , Cu(ClO 4 ) 2 , CuP 2 O 7 , CuSeO 3 , CuSO 4 , Cu-tartrate, Cu(BF 4 ) 2 , Cu(NH 3 ) 4 SO 4 , and including any hydrates of the foregoing.

3. The method of claim 2 , wherein the copper metal salt is CuCl 2 or a hydrate of CuCl 2 .

4. The method of claim 1 , wherein the silane-based reducing agent is selected from trietylsilane, trimethylsilane, triisopropylsilane, triphenylsilane, tri-n-propylsilane, tri-n-hexylsilane, triethoxysilane, tris(trimethylsiloxy)silane, tris(trimethylsilyl)silane, di-tert-butylmethylsilane, diethylmethylsilane, diisopropylchlorosilane, dimethylchlorosilane, dimethylethoxysilane, diphenylmethylsilane, ethyldimethylsilane, ethyldichlorosilane, methyldichlorosilane, methyldiethoxysilane, octadecyldimethylsilane, phenyldimethylsilane, phenylmethylchlorosilane, 1,1,4,4-tetramethyl-1,4-disilabutane, trichlorosilane, dimethylsilane, di-tert-butylsilane, dichlorosilane, diethylsilane, diphenylsilane, phenylmethylsilane, n-hexylsilane, n-octadecylsilane, n-octylsilane, and phenylsilane.

5. The method of claim 4 , wherein the silane-based reducing agent is tris(trimethylsilyl)silane or triphenylsilane.

6. The method of claim 1 , wherein the surface ligand is selected from oleylamine, trioctylphosphine oxide, oleic acid, 1,2-hexadecanediol, trioctylphosphine, or any combination of the foregoing.

7. The method of claim 6 , wherein the surface ligand is oleylamine.

8. The method of claim 1 , wherein the reaction mixture is slowly heated with ramp of 2° C. /min up to a temperature from 160° C. to 200° C., and maintained at 160° C. to 200° C. for at least 8 hours.

9. The method of claim 1 , wherein the ultrathin copper nanowires are collected by centrifugation or filtration.

10. The method of claim 9 , wherein the method further comprises:
washing and centrifuging the collected copper elongated nanostructure with a nonpolar organic solvent for a plurality of times.

11. An ultrathin copper elongated nanostructure produced by the method of claim 1 .

12. The copper nanostructure of claim 11 , wherein the nanostructure has a diameter between 15 to 25 nanometers.

13. The copper nanostructure of claim 11 , wherein the nanostructure further comprises a surface copper oxide layer with a thickness up to 2 nm.

14. The copper nanostructure of claim 11 , wherein the copper nanostructure is at least 100 nm in length.

15. A transparent electrode conducting material comprising the copper nanostructure of claim 11 .

16. An optoelectronic device comprising the transparent electrode material of claim 15 .

17. The optoelectronic device of claim 16 , wherein the optoelectronic device is selected from the group consisting of a LCD display, a LED display, a photovoltaic device, a touch panel, a solar panel, a light emitting diode (LED), an organic light emitting diode (OLED), an OLED display, and a electrochromic window.

18. A method to synthesize a metal elongated nanostructure, comprising:
forming a reaction mixture comprising a silane-based reducing agent, a metal salt and a surface ligand, wherein the surface ligand may also be a solvent; and
maintaining the reaction mixture at a temperature from 20° C. to 360° C. between 1 to 48 hours with or without stirring;
wherein the metal elongated nanostructure comprises silver, aluminum, zinc, nickel, or platinum, and wherein the metal nanostructure has a diameter less than 65 nm and an aspect ratio greater than 1.

19. The method of claim 18 , wherein the surface ligand is oleylamine.

20. The method of claim 18 , wherein the metal nanostructure is collected by centrifugation and/or filtration.

21. A metal elongated nanostructure made by the method of claim 18 .

22. A transparent electrode comprising the metal elongated nanostructure of claim 21 .

23. An optoelectronic device comprising the transparent electrode of claim 22 .

24. The optoelectronic device of claim 23 , wherein the optoelectronic device is selected from the group consisting of a LCD display, a LED display, a photovoltaic device, a touch panel, a solar panel, a light emitting diode (LED), an organic light emitting diode (OLED), an OLED display, and a electrochromic window.

Assignees

• Univ California

Inventors

• Yang Peidong
• Sun Jianwei
• Yu Yi
• Cui Fan

Classifications

• C07F7/1804

  Compounds having Si-O-C linkages (Si-O-acyl linkages C07F7/1896) · CPC title

• B82B3/00

  Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units · CPC title

• C07F1/08

  Copper compounds · CPC title

• C07F7/12

  Organo silicon halides · CPC title

• C07F7/0896

  Compounds with a Si-H linkage · CPC title