Molybdenum containing targets

Patent metadata

Field	Value
Publication number	US-10403483-B2
Application number	US-201715804365-A
Country	US
Kind code	B2
Filing date	Nov 6, 2017
Priority date	Jun 30, 2010
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.

First claim

What is claimed is:

1. A sputter target that is sputterable to form a film comprising molybdenum and at least two additional elements selected from the list consisting of titanium, tantalum, chromium, hafnium, zirconium, and tungsten, the sputter target comprising:
a continuous first phase comprising at least 50 atomic % molybdenum;
dispersed within the first phase, a discrete second phase comprising at least 50 atomic % of a first element selected from the list consisting of titanium, tantalum, chromium, hafnium, zirconium, and tungsten; and
dispersed within the first phase and/or within the second phase, a discrete third phase comprising at least 50 atomic % of a second element selected from the list consisting of titanium, tantalum, chromium, hafnium, zirconium, and tungsten, wherein the first and second elements are different.

2. The sputter target of claim 1 , wherein the first element is titanium.

3. The sputter target of claim 1 , wherein the second element is tantalum.

4. The sputter target of claim 1 , wherein the second element is chromium.

5. The sputter target of claim 1 , further comprising, dispersed within the first phase and/or within the second phase, a discrete fourth phase comprising at least 50 atomic % of a third element selected from the list consisting of titanium, tantalum, chromium, hafnium, zirconium, and tungsten, wherein the third element is different from the first and second elements.

6. The sputter target of claim 5 , wherein the first element is titanium, the second element is tantalum, and the third element is chromium.

7. The sputter target of claim 1 , wherein at least a portion of the second phase is elongated in shape.

8. The sputter target of claim 1 , wherein at least a portion of the third phase is elongated in shape.

9. The sputter target of claim 1 , further comprising, disposed between the first phase and at least a portion of the second phase, an alloy phase comprising molybdenum and the first element, a concentration of the first element within the alloy phase being lower than a concentration of the first element within the at least a portion of the second phase.

10. The sputter target of claim 1 , further comprising, disposed between the first phase and at least a portion of the third phase, an alloy phase comprising molybdenum and the second element, a concentration of the second element within the alloy phase being lower than a concentration of the second element within the at least a portion of the third phase.

11. The sputter target of claim 1 , wherein the second phase is present as a plurality of domains having a domain size of 0.3 μm or more.

12. The sputter target of claim 1 , wherein the second phase is present as a plurality of domains having a domain size of 200 μm or less.

13. The sputter target of claim 1 , wherein the third phase is present as a plurality of domains having a domain size of 0.3 μm or more.

14. The sputter target of claim 1 , wherein the third phase is present as a plurality of domains having a domain size of 200 μm or less.

15. The sputter target of claim 1 , wherein a molybdenum concentration of the sputter target is about 40 atomic % or more.

16. The sputter target of claim 1 , wherein a concentration of the first element in the sputtering target is about 1 atomic % or more.

17. The sputter target of claim 16 , wherein a concentration of the second element in the sputtering target is about 1 atomic % or more.

18. The sputter target of claim 1 , wherein the sputtering target is sputterable to form a film comprising molybdenum, titanium, and tantalum.

19. The sputter target of claim 1 , wherein the sputtering target is sputterable to form a film comprising molybdenum, titanium, tantalum, and chromium.

20. The sputter target of claim 1 , wherein the sputtering target is sputterable to form a film comprising molybdenum, titanium, and chromium.

Assignees

• Starck H C Inc

Inventors

• Rozak Gary Alan
• Gaydos Mark E
• Hogan Patrick Alan
• Sun Shuwei

Classifications

• B22F2998/10

  Processes characterised by the sequence of their steps · CPC title

• Y10T428/12014

  having metal particles · CPC title

• C23F1/14

  Aqueous compositions · CPC title

• C23G1/205

  refractory metals · CPC title

• C23C14/3407 Primary

  Cathode assembly for sputtering apparatus, e.g. Target · CPC title