Tunable multi-zone gas injection system

Patent metadata

Field	Value
Publication number	US-10403475-B2
Application number	US-201514703066-A
Country	US
Kind code	B2
Filing date	May 4, 2015
Priority date	Oct 15, 2001
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

First claim

What is claimed is:

1. A plasma processing system comprising:
a plasma processing chamber;
a vacuum pump connected to the plasma processing chamber;
a substrate support on which a substrate is processed within the plasma processing chamber;
a dielectric member having an interior surface facing the substrate support wherein the dielectric member forms a wall of the plasma processing chamber;
a gas injector extending through the dielectric member such that a distal end of the gas injector is exposed within the plasma processing chamber, the gas injector including first and second gas inlets, first and second gas passages and first and second gas outlets supplying process gas at flow rates that are independently varied between the first and second gas outlets into the plasma processing chamber; and
an RF energy source which inductively couples RF energy through the dielectric member and into the plasma processing chamber to energize the process gas into a plasma state to process the substrate,
wherein the gas injector includes, at the distal end, a planar axial end face having the first gas outlet therein, wherein the first gas outlet includes a single on-axis outlet, and an external conical side surface having the second gas outlet therein, wherein the second gas outlet includes a plurality of off-axis outlets, and
wherein the external conical side surface is tapered as to decrease in diameter toward the planar axial end face.

2. The system of claim 1 , wherein the system is a high density plasma chemical vapor deposition system or a high density plasma etching system.

3. The system of claim 1 , wherein the RF energy source comprises an RF antenna and the gas injector injects the process gas toward a primary plasma generation zone in the plasma processing chamber.

4. The system of claim 1 , wherein the on-axis outlet and the off-axis outlets are supplied process gas from a single gas supply via first and second gas lines, the first and second gas lines including flow controllers which provide adjustable gas flow to the on-axis outlet independently of the off-axis outlets.

5. The system of claim 1 , wherein the single on-axis outlet extends in an axial direction perpendicular to an exposed surface of the substrate and the plurality of off-axis outlets extend at an acute angle to the axial direction, the single on-axis outlet receiving process gas supplied by a first gas line and the plurality of off-axis outlets receiving process gas from a second gas line, the first and second gas lines receiving process gas from the same gas supply.

6. The system of claim 1 , wherein the gas injector injects the process gas at a subsonic, sonic, or supersonic velocity.

7. The system of claim 1 , wherein the on-axis outlet is configured to receive the process gas from a central passage in the gas injector and the off-axis outlets are configured to receive the process gas from an annular passage surrounding the central passage.

8. The system of claim 1 , wherein the gas injector is removably mounted in the dielectric member and supplies the process gas into a central region of the plasma processing chamber.

9. The system of claim 1 , wherein the on-axis outlet injects process gas in an axial direction perpendicular to a plane parallel to an exposed surface of the substrate and the off-axis gas outlets inject process gas at an acute angle relative to the plane parallel to the exposed surface of the substrate.

10. The system of claim 1 , wherein the gas injector is removably mounted in an opening in the dielectric member and a vacuum seal is provided between the gas injector and the dielectric member.

11. The system of claim 1 , wherein the RF energy source comprises an RF antenna in the form of a planar or non-planar spiral coil and the gas injector injects the process gas toward a primary plasma generation zone in the plasma processing chamber.

12. The system of claim 1 , wherein a single main gas supply is split into multiple gas supply lines to feed the gas outlets.

13. The system of claim 1 , wherein a ratio of gas flow through at least some of the gas outlets is independently varied using variable flow restriction devices.

14. The system of claim 1 , wherein a ratio of gas flow through at least some of the gas outlets is independently varied using a network of valves and throttling elements.

15. The system of claim 1 , wherein the gas injector is further provided with an electrically conducting shield which minimizes plasma ignition within gas passages located in the gas injector.

16. A plasma processing system comprising:
a plasma processing chamber;
a vacuum pump connected to the plasma processing chamber;
a substrate support on which a substrate is processed within the plasma processing chamber;
a dielectric member having an interior surface facing the substrate support wherein the dielectric member forms a wall of the plasma processing chamber;
a gas injector extending through the dielectric member such that a distal end of the gas injector is exposed within the plasma processing chamber, the gas injector including first and second gas inlets, first and second gas passages and first and second gas outlets supplying process gas at flow rates that are independently varied between the first and second gas outlets into the plasma processing chamber;
an RF energy source which inductively couples RF energy through the dielectric member and into the plasma processing chamber to energize the process gas into a plasma state to process the substrate,
wherein the gas injector includes:
at the distal end, a planar axial end face having the first gas outlet therein, the first gas outlet including a single on-axis outlet;
an external conical side surface having the second gas outlet therein, the second gas outlet including a plurality of off-axis outlets; and
a top axial end face having an aperture formed therein, the aperture in fluid communication with the first gas outlet; and

a window that seals the aperture formed in the top axial end face of the gas injector.

Assignees

• Lam Res Corp

Inventors

• Cooperberg David J
• Vahedi Vahid
• Ratto Douglas
• Singh Harmeet
• Benjamin Neil

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/268

  of silicon-containing layers · CPC title

• H10P50/267

  using plasmas · CPC title

• H01J37/32715

  Workpiece holder · CPC title

• C23C16/45574 Primary

  Nozzles for more than one gas · CPC title