Output resistance testing integrated circuit

Patent metadata

Field	Value
Publication number	US-10401407-B2
Application number	US-201816205849-A
Country	US
Kind code	B2
Filing date	Nov 30, 2018
Priority date	Jun 12, 2014
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

An integrated circuit (IC) includes a first transistor having a first dopant type and a second transistor having a second dopant type opposite to the first dopant type. The first transistor includes a first terminal configured to receive a current, a second terminal connected to a node, and a first gate, and the second transistor includes a first terminal connected to a device under test (DUT), a second terminal connected to the node, and a second gate. Each one of the first gate, the node, or the second gate is capable of receiving a first voltage from a first voltage source simultaneously with another one of the first gate, the node, or the second gate receiving a second voltage from a second voltage source, the first voltage being different from the second voltage.

First claim

What is claimed is:

1. An integrated circuit (IC) comprising:
a first transistor having a first dopant type, the first transistor comprising:
a first terminal configured to receive a current;
a second terminal connected to a node; and
a first gate; and

a second transistor having a second dopant type opposite to the first dopant type, the second transistor comprising:
a third terminal connected to a device under test (DUT);
a fourth terminal connected to the node; and
a second gate,

wherein each one of the first gate, the node, or the second gate is capable of receiving a first voltage from a first voltage source simultaneously with another one of the first gate, the node, or the second gate receiving a second voltage from a second voltage source, the first voltage being different from the second voltage.

2. The IC of claim 1 , wherein the first transistor is a p-type metal-oxide semiconductor (PMOS) transistor and the second transistor is an n-type metal-oxide-semiconductor (NMOS) transistor.

3. The IC of claim 1 , further comprising a third transistor connected in series with the first transistor and the second transistor.

4. The IC of claim 1 , further comprising a current source configured to provide the current.

5. The IC of claim 4 , wherein the current source is configured to provide the current as a temperature independent reference current.

6. The IC of claim 4 , wherein the current source comprises a current mirror.

7. The IC of claim 1 , wherein the DUT comprises a core transistor.

8. The IC of claim 1 , wherein the DUT is coupled between the second transistor and a reference voltage connection.

9. The IC of claim 1 , wherein the DUT has an output resistance greater than 1 mega-ohm (MΩ).

10. The IC of claim 1 , further comprising a programmable e-fuse coupled between a reference voltage connection and the fourth terminal or a bulk terminal of the second transistor.

11. An integrated circuit (IC) comprising:
a first transistor having a first dopant type, the first transistor comprising:
a first terminal configured to receive a current;
a second terminal connected to a node; and
a first gate;

a second transistor having a second dopant type opposite to the first dopant type, the second transistor comprising:
a third terminal connected to a device under test (DUT);
a fourth terminal connected to the node; and
a second gate; and

a first programmable e-fuse coupled between the node and one of the first gate or the second gate,
wherein the first gate is capable of receiving a first voltage from a first voltage source simultaneously with the second gate receiving a second voltage from a second voltage source, the first voltage being different from the second voltage.

12. The IC of claim 11 , wherein the node is capable of receiving a third voltage from a third voltage source simultaneously with at least one of the first gate receiving the first voltage from the first voltage source or the second gate receiving the second voltage from the second voltage source, the third voltage being different from the corresponding first voltage or second voltage.

13. The IC of claim 11 , further comprising a current mirror configured to provide the current.

14. The IC of claim 13 , further comprising a third transistor coupled between the current mirror and the first transistor, the first transistor and the second transistor, or the second transistor and the DUT.

15. The IC of claim 11 , wherein
the first programmable e-fuse is coupled between the node and the first gate, and
the IC further comprises a second programmable e-fuse coupled between the node and the second gate.

16. The IC of claim 11 , wherein the DUT comprises a core transistor having an output resistance greater than 1 mega-ohm (MΩ).

17. The IC of claim 11 , further comprising a second programmable e-fuse coupled between a reference voltage connection and the fourth terminal or a bulk terminal of the second transistor.

18. An integrated circuit (IC) comprising:
a first transistor having a first dopant type, the first transistor comprising:
a first terminal configured to receive a current;
a second terminal connected to a node; and
a first gate;

a second transistor having a second dopant type opposite to the first dopant type, the second transistor comprising:
a third terminal connected to a device under test (DUT);
a fourth terminal connected to the node; and
a second gate; and

a first programmable e-fuse coupled between the third terminal and a reference voltage connection,
wherein each one of the first gate, the node, or the second gate is capable of receiving a first voltage from a first voltage source simultaneously with another one of the first gate, the node, or the second gate receiving a second voltage from a second voltage source, the first voltage being different from the second voltage.

19. The IC of claim 18 , wherein the DUT is configured in parallel with the first programmable e-fuse.

20. The IC of claim 18 , further comprising:
a second programmable e-fuse coupled between the node and the first gate; and
a third programmable e-fuse coupled between the node and the second gate.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Taiwan Semiconducor Mfg Company Ltd

Inventors

• Chou Wen-Shen
• Kang Po-Zeng
• Peng Yung-Chow

Classifications

• G01R27/025 Primary

  Measuring very high resistances, e.g. isolation resistances, i.e. megohm-meters · CPC title

• G01R31/2837

  Characterising or performance testing, e.g. of frequency response (transient response G01R27/28) · CPC title

• G01R27/08

  Measuring resistance by measuring both voltage and current · CPC title