Waveguide for a bulk-type medium, vibrator using same to transmit shear waves to a bulk-type medium, and method using the vibrator to transmit shear waves to a bulk-type medium
US-9527111-B2 · Dec 27, 2016 · US
US10401233B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10401233-B2 |
| Application number | US-201515504428-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 25, 2015 |
| Priority date | Aug 27, 2014 |
| Publication date | Sep 3, 2019 |
| Grant date | Sep 3, 2019 |
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Some aspects of the present disclosure feature a sensing device comprising a magnetic bias layer, a resonator, a spacer, and a housing. The spacer includes an environmental change receptor. The thickness of the environmental change receptor rapidly increases in response to a change to an environment variable.
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What is claimed is: 1. A sensing device, comprising: a magnetic bias layer having a first magnetic surface and an opposing second magnetic surface, the magnetic layer comprising a first electromagnetic material, a resonator having a first resonator major surface and an opposing second resonator major surface, the resonator comprising a second magnetic material, the second resonator major surface facing toward the first magnetic surface, a spacer, and a housing containing the magnetic bias layer, the resonator, and the spacer, wherein the spacer comprises an environmental change receptor, wherein the thickness of the environmental change receptor increases in response to a change to an environment variable, wherein a thickness of at least a portion of the spacer changes in response to an increase of the thickness of the environmental change receptor. 2. The sensing device of claim 1 , wherein at least part of the spacer is disposed between the resonator and the magnetic bias layer. 3. The sensing device of claim 1 , wherein at least part of the spacer is disposed on top of the resonator. 4. The sensing device of claim 1 , wherein resonant frequency of the resonator shifts in response to the thickness change to the environmental change receptor. 5. The sensing device of claim 1 , wherein the resonator is damped in response to the thickness change to the environmental change receptor. 6. The sensing device of claim 1 , wherein the environmental change receptor comprises a porous material. 7. The sensing device of claim 1 , wherein the environmental change receptor comprises an absorption material. 8. The sensing device of claim 1 , wherein the environmental change receptor includes a plurality of receptor elements. 9. The sensing device of claim 8 , wherein at least one of the plurality of receptor elements is disposed between the resonator and the magnetic bias layer. 10. The sensing device of claim 1 , further comprising: a housing, wherein the magnetic bias layer, the resonator, and the spacer are disposed in the housing. 11. The sensing device of claim 10 , wherein the housing comprising one or more openings to allow fluid distribution into the housing. 12. The sensing device of claim 10 , wherein the housing has a plurality of chambers. 13. The sensing device of claim 12 , wherein the magnetic bias layer and the resonator are disposed in a different chamber from each other. 14. A sensing device, comprising: a magnetic bias layer having a first magnetic surface and an opposing second magnetic surface, the magnetic layer comprising a first magnetic material, a resonator having a first resonator major surface and an opposing second resonator major surface, the resonator comprising a second magnetic material, the second resonator major surface facing toward the first magnetic surface, a spacer disposed between the magnetic bias layer and the resonator, wherein the spacer comprises an environmental change receptor, and a housing with one or more openings, wherein the magnetic bias layer, the resonator, and the spacer are disposed in the housing, wherein the thickness of the environmental change receptor increases in response to a change to an environment variable, wherein a thickness of at least a portion of the spacer changes in response to an increase of the thickness of the environmental change receptor. 15. The sensing device of claim 14 , wherein at least part of the spacer is disposed between the resonator and the magnetic bias layer. 16. The sensing device of claim 14 , wherein at least part of the spacer is disposed on top of the resonator. 17. The sensing device of claim 14 , wherein resonant frequency of the resonator shifts in response to the thickness change to the environmental change receptor. 18. The sensing device of claim 14 , wherein the resonator is damped in response to the thickness change to the environmental change receptor.
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