Oxide precursor, oxide layer, semiconductor element, and electronic device, and method of producing oxide layer and method of producing semiconductor element

Patent metadata

Field	Value
Publication number	US-10400336-B2
Application number	US-201515532769-A
Country	US
Kind code	B2
Filing date	Oct 5, 2015
Priority date	Dec 16, 2014
Publication date	Sep 3, 2019
Grant date	Sep 3, 2019

Abstract

An aliphatic polycarbonate, an oxide precursor, and an oxide layer are provided, which are capable of controlling stringiness, when a thin film that can be employed for an electronic device or a semiconductor element is formed by a printing method. In an oxide precursor of the present invention, a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates, and an aliphatic polycarbonate having a molecular weight of 6000 or more and 400000 or less constitutes 80% by mass or more of all the aliphatic polycarbonates.

First claim

The invention claimed is:

1. An oxide precursor, wherein:
a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates; and
an aliphatic polycarbonate having a molecular weight of 6000 or more and 400000 or less constitutes 80% by mass or more of all said aliphatic polycarbonates.

2. An oxide precursor, wherein:
a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates; and
said aliphatic polycarbonates have the value of L/(D×v×η) of 0.25 mm −1 Pa −1 or more when a cylindrical bar made of polytetrafluoroethylene and having a diameter “D” is dipped in a reservoir of said aliphatic polycarbonates having a zero-shear viscosity “η” as measured using a rheometer (TA Instruments, AR-2000EX), said cylindrical bar is raised at a velocity “v” and then the length “L” of a strand drawn out from the outermost surface of said collection of said aliphatic polycarbonate is measured.

3. The oxide precursor according to claim 1 , wherein
the contact angle between said solution and a base material is 30° or more and 36° or less at 30 seconds after said solution is placed on the base material, or
the contact angle between said solution and a base material is 26° or more and 32° or less at 120 seconds after said solution is placed on the base material.

4. The oxide precursor according to claim 1 , wherein:
said solution contains a binder (possibly including inevitable impurities) made of aliphatic polycarbonates; and
said aliphatic polycarbonates have the value of L/(D×v×η) of 0.25 mm −1 Pa −1 or more, when a cylindrical bar made of polytetrafluoroethylene and having a diameter “D” is dipped in a collection of said aliphatic polycarbonates having a zero-shear viscosity “η” as measured using a rheometer (TA Instruments, AR-2000EX), said cylindrical bar is raised at a velocity “v” and then the length “L” of a strand drawn out from the outermost surface of said collection of said aliphatic polycarbonate is measured.

5. The oxide precursor according to claim 1 , wherein said aliphatic polycarbonates are each an aliphatic polycarbonate obtained by polymerizing an epoxide and carbon dioxide.

6. The oxide precursor according to claim 1 , wherein said aliphatic polycarbonates are at least one member selected from the group consisting of a polyethylene carbonate and a polypropylene carbonate.

7. An oxide layer, which is formed by annealing an oxide precursor layer wherein:
a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates; and
an aliphatic polycarbonate having a molecular weight of 6000 or more and 400000 or less constitutes 80% by mass or more of all said aliphatic polycarbonates.

8. An oxide layer, which is formed by annealing an oxide precursor layer wherein:
a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates; and
said aliphatic polycarbonates have the value of L/(D×v×η) of 0.25 mm −1 Pa −1 or more, when a cylindrical bar made of polytetrafluoroethylene and having a diameter “D” is dipped in a collection of said aliphatic polycarbonates having a zero-shear viscosity “η” as measured using a rheometer (TA Instruments, AR-2000EX), said cylindrical bar is raised at a velocity “v” and then the length “L” of a strand drawn out from the outermost surface of said collection of said aliphatic polycarbonate is measured.

9. The oxide layer according to claim 7 , wherein
the contact angle between said solution and a base material is 30° or more and 36° or less at 30 seconds after said solution is placed on the base material or
the contact angle between said solution and a base material is 26° or more and 32° or less at 120 seconds after said solution is placed on the base material.

10. A semiconductor element, comprising the oxide layer according to claim 7 .

11. An electronic device comprising the oxide layer according to claim 9 .

12. A method of producing an oxide layer, comprising:
a precursor layer forming step for forming, by a printing method, an oxide precursor layer wherein
a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates,
and an aliphatic polycarbonate having a molecular weight of 6000 or more and 400000 or less constitutes 80% by mass or more of all said aliphatic polycarbonates; and

an annealing step for annealing said precursor layer.

13. A method of producing an oxide layer, comprising:
a precursor layer forming step for forming, by a printing method, an oxide precursor layer wherein
a compound of metal to be oxidized into a metal oxide is dispersed in a solution containing a binder (possibly including inevitable impurities) made of aliphatic polycarbonates, and
said aliphatic polycarbonates have the value of L/(D×v×η) of 0.25 mm −1 Pa −1 or more, when a cylindrical bar made of polytetrafluoroethylene and having a diameter “D” is dipped in a collection of said aliphatic polycarbonates having a zero-shear viscosity “η” as measured using a rheometer (TA Instruments, AR-2000EX), said cylindrical bar is raised at a velocity “v” and then the length “L” of a strand drawn out from the outermost surface of said collection of said aliphatic polycarbonate is measured; and

an annealing step for annealing said precursor layer.

14. A method of producing a semiconductor element, comprising:
said precursor layer forming step according to claim 12 ; and
said annealing step according to claim 12 .

15. The oxide precursor according to claim 2 , wherein
the contact angle between said solution and a base material is 30° or more and 36° or less at 30 seconds after said solution is placed on the base material, or
the contact angle between said solution and a base material is 26° or more and 32° or less at 120 seconds after said solution is placed on the base material.

16. The oxide precursor according to claim 2 , wherein:
said solution contains a binder (possibly including inevitable impurities) made of aliphatic polycarbonates; and
said aliphatic polycarbonates have the value of L/(D×v×η) of 0.25 mm −1 Pa −1 or more, when a cylindrical bar made of polytetrafluoroethylene and having a diameter “D” is dipped in a collection of said aliphatic polycarbonates having a zero-shear viscosity “η” as measured using a rheometer (TA Instruments, AR-2000EX), said cylindrical bar is raised at a velocity “v” and then the length “L” of a strand drawn out from the outermost surface of said collection of said aliphatic polycarbonate is measured.

17. The oxide layer according to claim 8 , wherein
the contact angle between said solution and a base material is 30° or more and 36° or less at 30 seconds after said solution is placed on the base material or
the contact angle between said solution and a base material is 26° or more and 32° or less at 120 seconds after said solution is placed on the base material.

18. A semiconductor element, comprising the oxide layer according to claim 8 .

19. An electronic device comprising the semiconductor element according to claim 10 .

20. A method of producing a semiconductor el

Assignees

• Japan Advanced Institute Of Science And Tech
• Sumitomo Seika Chemicals

Inventors

• Shimoda Tatsuya
• Inoue Satoshi
• Fukada Kazuhiro
• Nishioka Kiyoshi
• Fujimoto Nobutaka
• Suzuki Masahiro

Classifications

• H10P14/6322

  Formation by thermal treatments (formation by plasma treatment H10P14/6319) · CPC title

• H10P14/6314

  of a metallic layer · CPC title

• H10P14/3434 Primary

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/46

  using a liquid · CPC title