Die attachment apparatus and method utilizing activated forming gas

US10399170B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10399170-B2
Application numberUS-201314141767-A
CountryUS
Kind codeB2
Filing dateDec 27, 2013
Priority dateSep 11, 2013
Publication dateSep 3, 2019
Grant dateSep 3, 2019

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A die attachment apparatus for attaching a semiconductor die onto a substrate having a metallic surface comprises a material dispensing station for dispensing a bonding material onto the substrate and a die attachment station for placing the semiconductor die onto the bonding material which has been dispensed onto the substrate. An activating gas generator positioned before the die attachment station introduces activated forming gas onto the substrate in order to reduce oxides on the substrate.

First claim

Opening claim text (preview).

The invention claimed is: 1. A die attachment apparatus for attaching a semiconductor die onto a substrate having a metallic surface, the apparatus comprising: a heat tunnel through which the substrate is configured to be conveyed for the attachment of the semiconductor die to the substrate; a heat tunnel cover for closing the heat tunnel; a material dispensing station for dispensing a bonding material onto the substrate; a die attachment station for placing the semiconductor die onto the bonding material which has been dispensed onto the substrate; and an activating gas generator operable for exciting forming gas at atmospheric pressure, the activating gas generator being positioned over and directly in contact with the heat tunnel cover, before the die attachment station, and over an opening in the heat tunnel cover which extends entirely through the heat tunnel cover, for spraying activated forming gas which has been excited at atmospheric pressure through the opening and directly onto the substrate in the heat tunnel, the activated forming gas being operative to reduce oxides on the substrate; wherein the activating gas generator is movable perpendicularly to a direction of conveyance of the substrate inside the heat tunnel. 2. The die attachment apparatus as claimed in claim 1 , wherein the heat tunnel is filled with shielding gas and closed with a heat tunnel cover for containing the substrate when the substrate is undergoing processing at the respective stations. 3. The die attachment apparatus as claimed in claim 1 , further comprising a slidable cover that is connected to and is movable with the activating gas generator, the slidable cover being operative to minimize the leakage of activated forming gas from the heat tunnel through the opening. 4. The die attachment apparatus as claimed in claim 1 , wherein the opening in the heat tunnel cover has a sufficiently large diameter to slow a speed of the activated forming gas emerging from the activating gas generator into the heat tunnel. 5. The die attachment apparatus as claimed in claim 1 , wherein the activating gas generator comprises a first gas generator positioned before the material dispensing station and/or a second gas generator positioned between the material dispensing station and the die attachment station. 6. The die attachment apparatus as claimed in claim 5 , wherein the first gas generator is operative to reduce oxides on the substrate at least at a location on the substrate where an amount of bonding material is to be dispensed, and the second gas generator is operative to reduce oxides on the amount of bonding material that has been dispensed onto the substrate. 7. The die attachment apparatus as claimed in claim 1 , wherein the activating gas generator is positioned at the material dispensing station. 8. The die attachment apparatus as claimed in claim 7 , wherein the activating gas generator is installed onto a material dispenser located at the material dispensing station, the activating gas generator being operative to introduce activated forming gas both at least at parts of the substrate where the bonding material is to be dispensed, and to introduce activated forming gas onto bonding material that has been dispensed at said parts of the substrate. 9. The die attachment apparatus as claimed in claim 1 , wherein the activating gas generator comprises a first electrode and a second electrode for creating an electric field, and a gas swirler comprising a plurality of gas swirling holes for swirling gas passing through the electric field with circumferential distribution. 10. The die attachment apparatus as claimed in claim 9 , wherein the first electrode comprises a cone-shaped cylindrical electrode which is electrically conductive and protrusive. 11. The die attachment apparatus as claimed in claim 10 , wherein at its lowest point, the cone-shaped cylindrical electrode is located next to an opening in a heat tunnel that is operative to contain the substrate during processing at the respective stations. 12. The die attachment apparatus as claimed in claim 10 , further comprising a dielectric material located between the cone-shaped cylindrical electrode and a holder of the activating gas generator, the dielectric material being polarized to provide the electric field. 13. The die attachment apparatus as claimed in claim 10 , wherein the second electrode is connected to an alternating electrical supply and comprises a holder for the activating gas generator and/or a heat tunnel cover for closing a heat tunnel that is operative to contain the substrate during processing of the substrate at the respective stations. 14. The die attachment apparatus as claimed in claim 13 , wherein the alternating electrical supply has a frequency of 10 kHz to 20 MHz, and a voltage of 100V to 50 kV. 15. The die attachment apparatus as claimed in claim 1 , wherein the activated forming gas is excited by the activating gas generator to create an activated species and/or excited radicals for reducing oxides. 16. The die attachment apparatus as claimed in claim 1 , wherein the activated forming gas comprises an activated hydrogen species that is activated to form plasma-like particles containing atomic, ionic and discharged hydrogen and other reactive matter. 17. The die attachment apparatus as claimed in claim 4 , wherein the opening in the heat tunnel cover is tapered so as to become narrower from the outside to the inside of the heat tunnel cover. 18. A die attachment apparatus for attaching a semiconductor die onto a substrate having a metallic surface, the apparatus comprising: a heat tunnel through which the substrate is configured to be conveyed for the attachment of the semiconductor die to the substrate; a heat tunnel cover for closing the heat tunnel; a material dispensing station for dispensing a bonding material onto the substrate; a die attachment station for placing the semiconductor die onto the bonding material which has been dispensed onto the substrate; and an activating gas generator operable for exciting forming gas at atmospheric pressure, the activating gas generator being positioned over and directly in contact with the heat tunnel cover, before the die attachment station, and over an opening in the heat tunnel cover which extends entirely through the heat tunnel cover, for spraying activated forming gas which has been excited at atmospheric pressure through the opening and directly onto the substrate in the heat tunnel, the activated forming gas being operative to reduce oxides on the substrate; wherein the activating gas generator is movable transversely along the heat tunnel cover, at least perpendicularly to a direction of conveyance of the substrate inside the heat tunnel.

Assignees

Inventors

Classifications

  • Means for moving chips, wafers or other parts, e.g. conveyor belts · CPC title

  • Means for storing or moving the material for the connector · CPC title

  • Soldering or alloying · CPC title

  • of die-attach connectors · CPC title

  • comprising metals or metalloids, e.g. solders · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10399170B2 cover?
A die attachment apparatus for attaching a semiconductor die onto a substrate having a metallic surface comprises a material dispensing station for dispensing a bonding material onto the substrate and a die attachment station for placing the semiconductor die onto the bonding material which has been dispensed onto the substrate. An activating gas generator positioned before the die attachment s…
Who is the assignee on this patent?
Lam Kui Kam, Tu Pingliang, Yang Zhao, and 3 more
What technology area does this patent fall under?
Primary CPC classification B23K3/082. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Sep 03 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).