Energy augmentation structures, energy emitters or energy collectors containing the same, and their use in solar cells and other energy conversion devices
US-2024115878-A1 · Apr 11, 2024 · US
US10394102B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10394102-B2 |
| Application number | US-201816185189-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 9, 2018 |
| Priority date | Jan 30, 2014 |
| Publication date | Aug 27, 2019 |
| Grant date | Aug 27, 2019 |
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A device for the generation of supercontinuum in infrared fiber with a compact light source comprising a microchip laser is launched directly into an infrared fiber without a nonlinear element. Light from the laser is beyond the two-photon absorption of the infrared fiber. The broadband output has a bandwidth greater than the input laser bandwidth by at least 100% and an emission wavelength range from 2 to 14 micrometers.
Opening claim text (preview).
What is claimed as new and desired to be protected by Letters Patent of the United States is: 1. A device for generating a supercontinuum in an infrared fiber with a light source, comprising: a pulsed microchip laser having an input laser bandwidth, wherein said pulsed microchip laser has a pulse duration between 40 ps and 5 ns; and an infrared fiber, wherein said infrared fiber is a chalcogenide glass fiber, wherein said pulsed microchip laser is launched directly into said infrared fiber without a nonlinear element, and wherein light from said pulsed microchip laser is beyond the two-photon absorption of said infrared fiber; and a broadband output having a bandwidth greater than said input laser bandwidth by at least 100% and an emission wavelength range from 2 to 14 micrometers. 2. The device of claim 1 , wherein said pulsed microchip laser comprises an optically active element Nd, Yb, Er, Dy, Pr, Sm, Eu, Ho, Tm, a transition metal ion Cr or Fe, or any combination thereof. 3. The device of claim 1 , wherein said pulsed microchip laser has a repetition rate between 100 Hz and 100 MHz. 4. The device of claim 1 , wherein said pulsed microchip laser has a pulse duration between 500 ps and 2 ns and a repetition rate between 10 kHz and 10 MHz. 5. The device of claim 1 , wherein said device weighs 20 kg or less and has dimensions of 20 cm×20 cm×20 cm or less. 6. A device for generating a supercontinuum in an infrared fiber with a light source, comprising: a pulsed microchip laser having an input laser bandwidth, wherein said pulsed microchip laser has a pulse duration between 40 ps and 5 ns; and an infrared fiber, wherein said infrared fiber is a chalcogenide glass fiber, wherein said pulsed microchip laser is launched directly into said infrared fiber without a nonlinear element, and wherein light from said pulsed microchip laser is beyond the two-photon absorption of said infrared fiber; and a broadband output having a bandwidth greater than said input laser bandwidth by at least 100% and an emission wavelength range from 2.8 to 6 micrometers. 7. The device of claim 6 , wherein said pulsed microchip laser comprises an optically active element Nd, Yb, Er, Dy, Pr, Sm, Eu, Ho, Tm, a transition metal ion Cr or Fe, or any combination thereof. 8. The device of claim 6 , wherein said pulsed microchip laser has a repetition rate between 100 Hz and 100 MHz. 9. The device of claim 6 , wherein said pulsed microchip laser has a pulse duration between 500 ps and 2 ns and a repetition rate between 10 kHz and 10 MHz. 10. The device of claim 6 , wherein said device weighs 20 kg or less and has dimensions of 20 cm×20 cm×20 cm or less.
YAG · CPC title
Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity (nonlinear frequency conversion per se G02F1/35) · CPC title
the resonator being monolithic, e.g. microlaser · CPC title
for parametric generation or amplification of light, infrared or ultraviolet waves · CPC title
in an optical waveguide structure (G02F1/377, {G02F1/395} take precedence) · CPC title
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