Multi-wavelength detector array incorporating two dimensional and one dimensional materials

Patent metadata

Field	Value
Publication number	US-10388805-B2
Application number	US-201816030035-A
Country	US
Kind code	B2
Filing date	Jul 9, 2018
Priority date	Apr 25, 2016
Publication date	Aug 20, 2019
Grant date	Aug 20, 2019

Abstract

A method of forming a wavelength detector that includes forming a first transparent material layer having a uniform thickness on a first mirror structure, and forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer. A second transparent material layer is formed having a plurality of different thickness portions atop the active element layer, wherein each thickness portion correlates to at least one of the plurality of nanomaterials. A second mirror structure is formed on the second transparent material layer.

First claim

What is claimed is:

1. A method of forming a wavelength detector comprising:
forming a first transparent material layer having a uniform thickness on a first mirror structure;
forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer, wherein the plurality of nanomaterial sections are composed of nanomaterials selected from the group consisting of graphene, transition metal dichalcogenides, carbon fullerenes, carbon nanotubes, black phosphorus or a combination thereof;
forming a second transparent material layer having a plurality of different thickness portions atop the active element layer; and
forming a second mirror structure on the second transparent material layer.

2. The method of claim 1 , wherein forming the plurality of nanomaterial sections comprises:
forming a layer of nanomaterials using chemical vapor deposition (CVD); and
patterning the plurality of nanomaterial sections from the layer of nanomaterials using a photoresist mask and etch process.

3. The method of claim 1 , wherein forming the plurality of nanomaterial sections comprises:
forming a layer of nanomaterials using van der Waals epitaxial growth; and
patterning the plurality of nanomaterial sections from the layer of nanomaterials using a photoresist mask and etch process.

4. The method of claim 2 , wherein the electrodes are present between adjacent portions of nanomaterial sections in the plurality of nanomaterial sections.

5. The method of claim 1 , wherein forming said plurality of different thickness portions comprises:
depositing the second transparent material layer having a uniform thickness;
forming a material layer for a photoresist mask having a uniform thickness;
patterning the material layer with different levels of radiation;
developing the material layer treated with different levels of radiation to provide a stepped etch mask; and
etching the second transparent material layer using the stepped etch mask.

6. The method of claim 1 , wherein said etching comprises an anisotropic etch.

7. The method of claim 1 , wherein each successive step of reducing thickness provides a dimension from the first mirror structure to the second mirror structure with one of the plurality of nanomaterial sections present therebetween that provides a wavelength to be measured by change in resistance measured across electrodes from said alternating sequence of electrodes that are positioned on opposing sides of said one of said plurality of nanomaterial sections.

8. A method of forming a wavelength detector comprising:
forming a first transparent material layer having a uniform thickness on a first mirror structure;
forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer, wherein the plurality of nanomaterial sections are composed of nanomaterials selected from the group consisting of graphene, transition metal dichalcogenides, carbon fullerenes, carbon nanotubes, black phosphorus or a combination thereof; and
forming a second transparent material layer having a plurality of different thickness portions atop the active element layer.

9. The method of claim 8 , wherein forming the plurality of nanomaterial sections comprises:
forming a layer of nanomaterials using chemical vapor deposition (CVD); and
patterning the plurality of nanomaterial sections from the layer of nanomaterials using a photoresist mask and etch process.

10. The method of claim 8 , wherein forming the plurality of nanomaterial sections comprises:
forming a layer of nanomaterials using van der Waals epitaxial growth; and
patterning the plurality of nanomaterial sections from the layer of nanomaterials using a photoresist mask and etch process.

11. A method of forming a wavelength detector comprising:
forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop a first transparent material layer;
forming a second transparent material layer having a plurality of different thickness portions atop the active element layer, wherein the plurality of different thickness portions include a plurality of reducing thicknesses with successive steps, each step of reducing thickness overlying one of the plurality of nanomaterials; and
forming a mirror structure on the second transparent material layer.

12. The method of claim 11 , wherein plurality of nanomaterial sections are composed of nanomaterials selected from the group consisting of graphene, transition metal dichalcogenides, carbon fullerenes, carbon nanotubes, black phosphorus or a combination thereof.

13. The method of claim 12 , wherein forming the plurality of nanomaterial sections comprises forming a layer of nanomaterials using chemical vapor deposition (CVD).

14. The method of claim 13 , wherein said forming the plurality of nanomaterial sections comprises van der Waals epitaxial growth.

15. The method of claim 13 further comprising patterning the plurality of nanomaterial sections from the layer of nanomaterials using a photoresist mask and etch process.

16. The method of claim 12 , wherein the second transparent material layer is composed of a light transmissive material selected from the group consisting of aluminum oxide (Al2O3), silicon oxide (SiO2), silicon (Si), silicon nitride (Si3N4) and combinations thereof.

17. The method of claim 16 , wherein forming said plurality of different thickness portions comprises:
depositing the second transparent material layer having a uniform thickness;
forming a material layer for a photoresist mask having a uniform thickness;
patterning the material layer with different levels of radiation;
developing the material layer treated with different levels of radiation to provide a stepped etch mask; and
etching the second transparent material layer using the stepped etch mask.

18. The method of claim 17 , wherein said etching comprises an anisotropic etch.

19. The method of claim 18 , wherein each successive step of reducing thickness provides a nanomaterial section present therebetween that provides a wavelength to be measured by change in resistance measured across electrodes from said alternating sequence of electrodes that are positioned on opposing sides of said one of said plurality of nanomaterial sections.

20. The method of claim 17 , wherein the first transparent material layer has a uniform thickness.

Assignees

• IBM

Inventors

• Engel Michael
• Steiner Mathias B

Classifications

• H01L31/0384

  Electricity · mapped topic

• H01L31/18

  Electricity · mapped topic

• H01L31/109

  Electricity · mapped topic

• H01L31/02162

  Electricity · mapped topic

• H01L31/02327

  Electricity · mapped topic