Epitaxial substrate for electronic device and method of producing the same

Patent metadata

Field	Value
Publication number	US-10388517-B2
Application number	US-201213550115-A
Country	US
Kind code	B2
Filing date	Jul 16, 2012
Priority date	Nov 27, 2008
Publication date	Aug 20, 2019
Grant date	Aug 20, 2019

Abstract

An epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 Ω·cm.

First claim

The invention claimed is:

1. An epitaxial substrate for an electronic device, including:
a Si single crystal substrate; and
a Group III nitride laminated body comprising a plurality of Group III nitride layers on only one major surface of the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, wherein:
the epitaxial substrate further comprises a buffer as an insulating layer between the Si single crystal substrate and the Group III nitride laminated body,
the buffer includes a lamination constituted of a superlattice multilayer structure containing carbon at a concentration of 1×10 18 /cm 3 or more,
the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 Ω·cm,
an other major surface of the Si single crystal substrate being opposite to the one major surface is exposed; or a protection film made of an oxide film or a silicon-nitride film is further provided on the other major surface, and a surface of the protection film that is not facing the other major surface is exposed,
the plurality of Group III nitride layers include a first Group III nitride layer and a second Group III nitride layer, wherein the first Group III nitride layer is arranged between the buffer and the second Group III nitride layer such that the second Group III nitride layer does not directly contact a major surface of the superlattice multilayer structure opposite the one major surface of the Si single crystal substrate, and
the first Group III nitride layer is a channel layer and is in direct contact with the buffer.

2. The epitaxial substrate for an electronic device of claim 1 , wherein the Group III nitride layers are layers containing at least Al or Ga.

3. The epitaxial substrate for an electronic device of claim 1 , wherein the specific resistance value of the Si single crystal substrate is 0.005 Ω·cm or less.

Assignees

• Ikuta Tetsuya
• Shimizu Jo
• Shibata Tomohiko
• Dowa Electronics Materials Co Ltd

Inventors

• Ikuta Tetsuya
• Shimizu Jo
• Shibata Tomohiko

Classifications

• H10P14/3252

  Alternating layers, e.g. superlattice · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3416 Primary

  Nitrides · CPC title