Scintillator, scintillator panel, radiation detector and method of manufacturing scintillator

Patent metadata

Field	Value
Publication number	US-10386505-B2
Application number	US-201715643909-A
Country	US
Kind code	B2
Filing date	Jul 7, 2017
Priority date	Jul 8, 2016
Publication date	Aug 20, 2019
Grant date	Aug 20, 2019

Abstract

According to one embodiment, a scintillator includes a first layer provided on a surface of a substrate and including thallium activated cesium iodide; and a second layer provided on the first layer and including thallium activated cesium iodide. The second layer includes crystals having a [001] orientation partially diverted from a direction perpendicular to the surface of the substrate. Half width at half maximum of a frequency distribution curve of an angle between the direction perpendicular to the surface of the substrate and the [001] orientation, which is obtained by measuring the angle using EBSD method, is 2.4 degree or less.

First claim

What is claimed is:

1. A scintillator, comprising:
a first layer provided on a surface of a substrate and including thallium activated cesium iodide; and
a second layer provided on the first layer and including thallium activated cesium iodide, the second layer including crystals having a [001] orientation partially diverted from a direction perpendicular to the surface of the substrate,
wherein half width at half maximum of a frequency distribution curve of an angle between the direction perpendicular to the surface of the substrate and the [001] orientation, which is obtained by measuring the angle using EBSD method, is 2.4 degree or less.

2. The scintillator according to claim 1 , wherein a thallium concentration in the first layer is higher than a thallium concentration in the second layer.

3. The scintillator according to claim 1 , wherein a thallium concentration in the first layer is 3 wt % or less.

4. The scintillator according to claim 1 , wherein a thallium concentration in the first layer is 2 wt % or less.

5. The scintillator according to claim 1 , wherein a thallium concentration in the first layer is 1.5 wt % or less.

6. The scintillator according to claim 1 , wherein the first layer has a thickness of 3 μm or less.

7. The scintillator according to claim 1 , wherein the second layer includes a plurality of columnar crystals.

8. A scintillator panel, comprising:
a substrate being transmissive for radiation; and
a scintillator provided on the substrate,
wherein:
the scintillator comprises:
a first layer provided on a surface of the substrate and including thallium activated cesium iodide, and
a second layer provided on the first layer and including thallium activated cesium iodide, the second layer including crystals having a [001] orientation partially diverted from a direction perpendicular to the surface of the substrate; and

half width at half maximum of a frequency distribution curve of an angle between the direction perpendicular to the surface of the substrate and the [001] orientation, which is obtained by measuring the angle using EBSD method, is 2.4 degree or less.

9. The scintillator panel according to claim 8 , wherein a thallium concentration in the first layer is higher than a thallium concentration in the second layer.

10. The scintillator panel according to claim 8 , wherein a thallium concentration in the first layer is 3 wt % or less.

11. The scintillator panel according to claim 8 , wherein a thallium concentration in the first layer is 2 wt % or less.

12. The scintillator panel according to claim 8 , wherein a thallium concentration in the first layer is 1.5 wt % or less.

13. The scintillator panel according to claim 8 , wherein the first layer has a thickness of 3 μm or less.

14. A radiation detector, comprising:
a substrate including a plurality of photoelectric conversion elements; and
the scintillator according to claim 1 , the scintillator being provided on a region of the substrate, and the plurality of photoelectric conversion elements being provided in the region.

15. A radiation detector, comprising:
a substrate including a plurality of photoelectric conversion elements; and
the scintillator panel according to claim 8 , the scintillator panel being provided on a region of the substrate, and the plurality of photoelectric conversion elements being provided in the region.

Assignees

• Toshiba Electron Tubes & Devic
• Canon Electron Tubes & Devices Co Ltd

Inventors

• Yoshida Atsuya
• Horiuchi Hiroshi

Classifications

• G01T1/2002

  Optical details, e.g. reflecting or diffusing layers · CPC title

• C30B29/12

  Halides · CPC title

• G01T1/208

  Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section · CPC title

• C30B29/605

  Products containing multiple oriented crystallites, e.g. columnar crystallites · CPC title

• G01T1/2023 Primary

  Selection of materials · CPC title