System of controlling diameter of single crystal ingot and single crystal ingot growing apparatus including the same
US-9422637-B2 · Aug 23, 2016 · US
Control system and control method for diameter of single crystal ingot
US10385472B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10385472-B2 |
| Application number | US-201515544501-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 31, 2015 |
| Priority date | Jan 21, 2015 |
| Publication date | Aug 20, 2019 |
| Grant date | Aug 20, 2019 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
The embodiments of the present invention provides a diameter controlling system of the single crystal ingot for controlling a diameter deviation of a silicon ingot during the growth of silicon ingot by a Czochralski method, it may include a seed chuck for supporting a silicon ingot combined with a seed crystal and grown; a measuring part connected to an upper surface of the seed chuck with a cable and configured to measure a load applied to the seed chuck; a load adjusting part for moving a position of the seed chuck vertically while the seed chuck is connected to the cable to change a load applied to the silicon ingot; and a controlling part for controlling the load applied to the silicon ingot by driving the load adjusting part according to the load value measured from the measuring part. Therefore, shaking of the seed during the growth process of the single crystal ingot is prevented, and thus the diameter deviation of the growing single crystal ingot may be reduced.
First claim
Opening claim text (preview).
The invention claimed is: 1. A diameter controlling system of a single crystal ingot as a system of controlling a diameter deviation of the silicon ingot during growth of the silicon ingot by a Czochralski method, the system comprising: a seed chuck configured to support a silicon ingot which is combined with a crystal seed and grown; a measuring part connected to the upper surface of the seed chuck with a cable and configured to measure a load applied to the seed chuck; a bod…
Assignees
Inventors
Classifications
Chemistry & Metallurgy · mapped topic
Cross-Sectional Technologies · mapped topic
- C30B15/20Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10385472B2 cover?
- The embodiments of the present invention provides a diameter controlling system of the single crystal ingot for controlling a diameter deviation of a silicon ingot during the growth of silicon ingot by a Czochralski method, it may include a seed chuck for supporting a silicon ingot combined with a seed crystal and grown; a measuring part connected to an upper surface of the seed chuck with a ca…
- Who is the assignee on this patent?
- Lg Siltron Inc, Sk Siltron Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B15/20. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Aug 20 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).