Biosensor and detection device

Patent metadata

Field	Value
Publication number	US-10385377-B2
Application number	US-201615267683-A
Country	US
Kind code	B2
Filing date	Sep 16, 2016
Priority date	Sep 18, 2015
Publication date	Aug 20, 2019
Grant date	Aug 20, 2019

Abstract

A TFT biosensor includes a gate electrode (silicon substrate), a reference electrode, and enzyme that is fixed to an insulating substrate spatially separated from the gate electrode and the reference electrode. A pH variation in the vicinity of an ion-sensitive insulating film is induced by a reaction between the enzyme and a sensing object material. The TFT biosensor can detect a concentration of the sensing object material with high sensitivity by detecting the pH variation as a threshold voltage shift of characteristics of a gate-source voltage to a source-drain current.

First claim

What is claimed is:

1. A biosensor, comprising:
a semiconductor active layer;
a gate insulating film that is provided on a first surface of the semiconductor active layer, and insulates the semiconductor active layer and a gate electrode from each other;
an ion-sensitive insulating film that is provided on a second surface of the semiconductor active layer, and includes a region that comes into contact with a solution; and
an enzyme that is fixed at a position spatially separated from the ion-sensitive insulating film, and reacts with a material in the solution to allow a potential variation in the region to occur,
wherein an electrostatic capacity per unit area of the ion-sensitive insulating film is greater than an electrostatic capacity per unit area of the gate insulating film.

2. The biosensor according to claim 1 , further comprising:
a detection unit that detects a potential on the ion-sensitive insulating film after amplifying the potential with a value of a ratio obtained by dividing the electrostatic capacity per unit area of the ion-sensitive insulating film by the electrostatic capacity per unit area of the gate insulating film.

3. The biosensor according to claim 1 , further comprising:
a mechanism that controls a flow of a sensing object material between the ion-sensitive insulating film and the enzyme that is fixed to the position spatially separated from the ion-sensitive insulating film.

4. The biosensor according to claim 1 ,
wherein the semiconductor active layer is an oxide semiconductor or an organic semiconductor.

5. A biosensor, comprising:
a semiconductor active layer;
a first gate insulating film that is provided on a first surface of the semiconductor active layer, and insulates the semiconductor active layer and a first gate electrode from each other;
a second gate insulating film that is provided on a second surface of the semiconductor active layer;
a second gate electrode that is provided on the second gate insulating film, and extends to a position that is two-dimensionally spaced away from a region overlapping with the semiconductor active layer;
an ion-sensitive insulating film that is provided on the second gate electrode, and includes a region that comes into contact with a solution; and
an enzyme that is fixed to a position spatially separated from the ion-sensitive insulating film, and reacts with a material in the solution to allow a potential variation in the region of the ion-sensitive insulating film to occur,
wherein an electrostatic capacity per unit area of the second gate insulating film is greater than an electrostatic capacity per unit area of the first gate insulating film.

6. The biosensor according to claim 5 , further comprising:
a detection unit that detects a potential on the ion-sensitive insulating film after amplifying the potential with a value of a ratio obtained by dividing the electrostatic capacity per unit area of the second gate insulating film by the electrostatic capacity per unit area of the first gate insulating film.

7. The biosensor according to claim 5 , further comprising:
a mechanism that controls a flow of a sensing object material between the ion-sensitive insulating film and the enzyme that is fixed to the position spatially separated from the ion-sensitive insulating film.

8. The biosensor according to claim 5 , further comprising:
a first substrate on which the first gate electrode, the first gate insulating film, the semiconductor active layer, the second gate insulating film, the second gate electrode, and the ion-sensitive insulating film are formed; and
a second substrate in which the enzyme is fixed,
wherein the second substrate includes a groove in one surface, and the enzyme is fixed to an inner surface of the groove, and
the first substrate and the second substrate are disposed in a state in which the ion-sensitive insulating film and the enzyme face each other.

9. The biosensor according to claim 5 ,
wherein the first gate electrode, the first gate insulating film, the semiconductor active layer, the second gate insulating film, the second gate electrode, and the ion-sensitive insulating film are formed on a first substrate in this order, and
the enzyme, which reacts with the material in the solution to allow the potential variation in the region of the ion-sensitive insulating film to occur, is fixed onto a second substrate.

Assignees

• Nlt Technologies Ltd

Inventors

• Takechi Kazushige
• Iwamatsu Shinnosuke
• Abe Yutaka
• Yahagi Toru
• Konno Shunsuke
• Katoh Mutsuto

Classifications

• C12Q1/006 Primary

  for glucose · CPC title

• G01N2333/90206

  acting on the CH-CH group of donors (1.3) · CPC title

• C12Q1/002

  Electrode membranes · CPC title

• G01N27/4145 Primary

  specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title