Formulations comprising hydridosilanes and hydridosilane oligomers, their process of manufacture and their use

Patent metadata

Field	Value
Publication number	US-10385217-B2
Application number	US-201414899401-A
Country	US
Kind code	B2
Filing date	Jun 12, 2014
Priority date	Jun 18, 2013
Publication date	Aug 20, 2019
Grant date	Aug 20, 2019

Abstract

The present invention relates to formulations comprising at least one hydridosilane of the generic formula SinH2n+2 with n=7-10 and at least one hydridosilane oligomer, to processes for preparation thereof and to the use thereof.

First claim

The invention claimed is:

1. A formulation, comprising:
at least one hydridosilane, and
at least one hydridosilane oligomer, wherein the at least one hydridosilane has a generic formula Si n H 2n+2 with n ranging from 7-10,
wherein a proportion of the at least one hydridosilane is 0.1 to 60% by weight and a proportion of the at least one hydridosilane oligomer is from 40 to 99.9% by weight, each based on the total mass of said at least one hydridosilane and said at least one hydridosilane oligomer,
wherein the at least one hydridosilane oligomer has a weight-average molecular weight of 200 g/mol to 10 000 g/mol.

2. The formulation according to claim 1 , wherein the at least one hydridosilane is an octasilane isomer or a nonasilane isomer.

3. The formulation according to claim 1 , wherein the at least one hydridosilane is a branched hydridosilane.

4. The formulation according to claim 1 , wherein the at least one hydridosilane oligomer is obtained by a process comprising oligomerizing noncyclic hydridosilanes.

5. The formulation according to claim 4 , wherein the at least one hydridosilane oligomer is obtained by a process comprising converting thermally a composition comprising a noncyclic hydridosilane comprising not more than 20 silicon atoms, in the absence of a catalyst at a temperature of less than 235° C.

6. The formulation according to claim 1 , wherein the at least one hydridosilane oligomer comprises carbon.

7. The formulation according to claim 1 , wherein the at least one hydridosilane oligomer is doped.

8. The formulation according to claim 1 , wherein a proportion of the at least one hydridosilane is in a range of 1% to 40% by weight based on the total mass of the formulation.

9. The formulation according to claim 1 , wherein a proportion of the at least one hydridosilane oligomer is in a range of 1% to 60% by weight based on the total mass of the formulation.

10. The formulation according to claim 1 , wherein the formulation comprises a solvent.

11. The formulation according to claim 10 , wherein a proportion of the solvent is in a range of 25% to 95% by weight based on the total mass of the formulation.

12. The formulation according to claim 10 , wherein the formulation comprises: 1-30% by weight of at least one hydridosilane, 10-40% by weight of at least one hydridosilane oligomer and 50-85% by weight of solvent, based on the total mass of the formulation.

13. A process for preparing a formulation according to claim 1 , the process comprising:
mixing the at least one hydridosilane with the at least one hydridosilane oligomer and optionally a solvent.

14. A method for producing layers comprising silicon, the method comprising:
applying the formulation according to claim 1 to a substrate.

15. A method for producing electronic or optoelectronic layers, the method comprising:
applying the formulation according to claim 1 to a substrate.

16. A method for producing electronic or optoelectronic components, the method comprising:
applying the formulation according to claim 1 to a substrate.

17. The formulation according to claim 1 , further comprising a solvent in an amount of 0.1 to 99 wt. %, based on a total mass of said formulation.

18. The formulation according to claim 1 , further comprising a solvent in an amount of 25 to 99 wt. %, based on a total mass of said formulation.

19. The formulation according to claim 1 , further comprising a solvent in an amount of 60 to 95 wt. %, based on a total mass of said formulation.

Assignees

• Evonik Degussa Gmbh

Inventors

• Traut Stephan
• Patz Matthias
• Wieber Stephan
• Wöbkenberg Paul Henrich
• Erz Joachim
• Hessing Jutta

Classifications

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• C23C18/122

  Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes · CPC title

• C23C18/1212

  Zeolites, glasses · CPC title

• C09D183/16 Primary

  in which all the silicon atoms are connected by linkages other than oxygen atoms · CPC title

• C08G77/60

  in which all the silicon atoms are connected by linkages other than oxygen atoms · CPC title