Substrate having at least one partially or entirely flat surface and use thereof

Patent metadata

Field	Value
Publication number	US-10384947-B2
Application number	US-201715606987-A
Country	US
Kind code	B2
Filing date	May 26, 2017
Priority date	Jun 15, 2012
Publication date	Aug 20, 2019
Grant date	Aug 20, 2019

Abstract

A method for preparing a thin or thick film, including the aligning non-spherical seed crystals on a flat portion of at least one surface of the substrate such that an a-axis, a b-axis, and/or a c-axis are oriented according to a certain rule; and exposing the aligned seed crystals to a solution for enabling the growth of the seed crystals to thereby form and grow a film from the seed crystals using a secondary growing technique.

First claim

What is claimed is:

1. A method of preparing a substrate, at least one surface of which is partially or entirely flat, the method comprising:
forming a substrate by first substrate-forming particles;
placing a second substrate-forming particles on the surface of the substrate formed by the first substrate-forming particles;
applying pressure to the second substrate-forming particles to be insert into the first pores formed among the first substrate-forming particles, followed by calcinations;
coating the surface of the calcined substrate with a solution of the polymer, thereby filling some or all of second pores remaining in a portion filled with the second substrate-forming particles; and
heating the polymer-coated substrate to evaporate the solvent or cure the polymer.

2. The method of claim 1 , wherein at least one surface of the substrate is flat to allow non-spherical seed crystals to be aligned such that one or more or all of a-axes, b-axes and c-axes of the seed crystals are oriented according to a predetermined rule.

3. The method of claim 1 , wherein the first substrate-forming particles have an average particle size greater than that of the second substrate-forming particles.

4. The method of claim 1 , wherein one or more second substrate-forming particles are filled in each of the first pores generated by the first substrate-forming particles.

5. The method of claim 1 , wherein the first substrate-forming particles and the second substrate-forming particles are independently selected from ordered porous materials.

6. The method of claim 1 , wherein the first substrate-forming particles and the second substrate-forming particles are independently porous silica.

7. The method of claim 1 , wherein the polymer has a hydroxyl group or is treatable to have a hydroxyl group on a surface thereof.

8. A method of preparing a substrate complex, the method comprising:
preparing a substrate according to claim 1 ; and
aligning non-spherical seed crystals on a flat portion of at least one surface of the substrate such that one or more or all of a-axes, b-axes, and c-axes of the seed crystals are oriented according to a predetermined rule.

9. A method for preparing a thin film or a thick film, the method comprising:
(1) preparing a substrate according to claim 1 ;
(2) aligning non-spherical seed crystals on a flat portion of at least one surface of the substrate such that one or more or all of a-axis, b-axis and c-axis of the seed crystals are oriented according to a predetermined rule; and
(3) exposing the aligned seed crystals to a solution for seed crystal growth, and forming and growing the film from the seed crystals by a secondary growth method.

10. The method of claim 9 , wherein the solution for seed crystal growth used in step (3) comprises a structure-directing agent.

11. The method of claim 9 , wherein the seed crystals in step (3) grow vertically from the surface thereof by secondary growth to form a three-dimensional structure while being connected to one another two-dimensionally, thereby forming the film.

12. The method of claim 9 , wherein the seed crystals are selected from ordered porous materials.

13. The method of claim 9 , wherein the seed crystals in step (2) are aligned such that all the a-axes of the seed crystals are oriented parallel to one another, all the b-axes of the seed crystals are oriented parallel to one another, all the c-axes of the seed crystals are oriented parallel to each other, or a combination thereof.

14. The method of claim 13 , wherein the a-axis, b-axis or c-axis of the seed crystals is oriented normal to the substrate surface in step (2).

15. The method of claim 9 , wherein the film, formed in an area in which the orientations of the axes of seed crystals adjacent to one another are uniform, has : (a) channels that are continuously connected to one another and extend in an axial direction parallel to the substrate surface;
or (b) channels that are continuously connected to one another and extend in an axial direction perpendicular or inclined with respect to the substrate surface; or (c) both the channels of (a) and the channels of (b).

16. The method of claim 9 , wherein the seed crystals and the formed film is a zeolite or a zeotype molecular sieve.

17. The method of claim 9 , wherein step (2) is achieved by placing the seed crystals on the substrate, and then aligning the orientation of the a-axis, b-axis, or c-axis of the seed crystals by physical pressure.

Assignees

• Intellectual Discovery Co Ltd

Inventors

• Yoon Kyung Byung
• Pham Cao Thanh Tung
• Kim Hyun Sung

Classifications

• B01D61/007

  Separation by stereostructure, steric separation · CPC title

• B01D67/0051

  by controlled crystallisation, e,.g. hydrothermal growth · CPC title

• C01B39/38

  Type ZSM-5 · CPC title

• C01B39/023 Primary

  Preparation of physical mixtures or intergrowth products of zeolites chosen from group C01B39/04 or two or more of groups C01B39/14 - C01B39/48 · CPC title

• B01D53/228 Primary

  characterised by specific membranes · CPC title