Low temperature cofired ceramic material, ceramic sintered body, and ceramic electronic component
US-2018044244-A1 · Feb 15, 2018 · US
US10383220B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10383220-B2 |
| Application number | US-201715468697-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 24, 2017 |
| Priority date | Mar 25, 2016 |
| Publication date | Aug 13, 2019 |
| Grant date | Aug 13, 2019 |
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A ceramic substrate and a method for production thereof are provided, in which the ceramic substrate includes a composite of: a first ceramic layer including Sr anorthite and Al 2 O 3 or an oxide dielectric with a dielectric constant higher than that of Al 2 O 3 ; and a second ceramic layer including Sr anorthite and cordierite and having a dielectric constant lower than that of the first ceramic layer.
Opening claim text (preview).
What is claimed is: 1. A ceramic substrate comprising: a first ceramic layer comprising Sr anorthite and at least one component selected from the group consisting of (i) Al 2 O 3 and (ii) an oxide dielectric with a dielectric constant higher than that of Al 2 O 3 ; and a second ceramic layer comprising Sr anorthite and cordierite and having a dielectric constant lower than that of the first ceramic layer; wherein at least one of said layers of the ceramic substrate has an fQ product of 10 THz or more at a frequency of 15 GHz. 2. The ceramic substrate according to claim 1 , wherein the absolute value of a difference in thermal expansion coefficient between the first ceramic layer and the second ceramic layer is 1×10 −6 /° C. or less. 3. The ceramic substrate according to claim 1 , wherein the first ceramic layer and the second ceramic layer contains 0.5% by mass or less of B in terms of B 2 O 3 . 4. The ceramic substrate according to claim 1 , wherein the first ceramic layer has a dielectric constant of 7 or more, and the second ceramic layer has a dielectric constant of 6.5 or less. 5. The ceramic substrate according to claim 1 , wherein the first ceramic layer is produced from a composition that contains 40 to 50% by mass of Al in terms of Al 2 O 3 , 30 to 40% by mass of Si in terms of SiO 2 , and 10 to 20% by mass of Sr in terms of SrCO 3 . 6. The ceramic substrate according to claim 1 , wherein the first ceramic layer has a main phase of Al 2 O 3 or the oxide dielectric with a dielectric constant higher than that of Al 2 O 3 , and the second ceramic layer has a main phase of Sr anorthite. 7. The ceramic substrate according to claim 1 , wherein the first ceramic layer has an fQ product of at least 13 THz. 8. The ceramic substrate according to claim 1 , wherein the second ceramic layer has an fQ product of at least 11 THz. 9. The ceramic substrate according to claim 1 , wherein the first ceramic layer has an fQ product of at least 13 THz and the second ceramic layer has an fQ product of at least 11 THz.
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characterised by their solids loadings, i.e. the percentage of solids · CPC title
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