Method of forming semiconductor device

Patent metadata

Field	Value
Publication number	US-10381239-B2
Application number	US-201816104948-A
Country	US
Kind code	B2
Filing date	Aug 19, 2018
Priority date	Oct 10, 2017
Publication date	Aug 13, 2019
Grant date	Aug 13, 2019

Abstract

A method of forming a semiconductor device includes following steps. First of all, a substrate is provided, and a stacked structure is formed on the substrate. Then, a patterned silicon-containing mask layer is formed on the stacked structure, and the stacked structure is partially removed through the patterned silicon-containing mask layer, to form plural openings in the stacked structure. Following these, a bromine covering process is performed, to form a bromide layer on a portion of the patterned silicon-containing mask layer, and a bromide sublimation process is then performed, to completely remove the bromide layer.

First claim

What is claimed is:

1. A method of forming a semiconductor device, comprising:
providing a substrate;
forming a stacked structure on the substrate;
forming a patterned silicon-containing mask layer on the stacked structure;
partially removing the stacked structure through the patterned silicon-containing mask layer, to form a plurality of openings in the stacked structure;
performing a bromine covering process, to from a bromide layer on surfaces of the patterned silicon-containing mask layer; and
performing a bromide sublimation process, to completely remove the bromide layer.

2. The method of forming the semiconductor device according to claim 1 , further comprising:
repeatedly performing the bromine covering process and the bromide sublimation process, to completely remove the patterned silicon-containing mask layer.

3. The method of forming the semiconductor device according to claim 1 , wherein the bromine covering process and the bromide sublimation process are performed without bias.

4. The method of forming the semiconductor device according to claim 1 , wherein the bromide sublimation process is performed by providing a hydrogen-containing gas to react with the bromide layer.

5. The method of forming the semiconductor device according to claim 1 , wherein after the bromide sublimation process, a silicon bromide gas and a bromine gas are formed.

6. The method of forming the semiconductor device according to claim 1 , wherein before the bromide covering process, further comprises:
forming an oxide layer on exposed surface of the patterned silicon-containing mask layer; and
performing an etching process to remove the oxide layer.

7. The method of forming the semiconductor device according to claim 6 , wherein the etching process is performed by providing tetrafluoromethane (CF 4 ).

8. The method of forming the semiconductor device according to claim 1 , further comprising:
forming a dielectric layer on the substrate, the dielectric layer comprising a plurality of plugs formed therein, and top surfaces of the plugs being exposed from the openings.

9. The method of forming the semiconductor device according to claim 8 , further comprising:
after completely removing the patterned silicon-containing mask layer, forming a plurality of capacitors in the openings to electrically connect to the plugs respectively.

10. The method of forming the semiconductor device according to claim 1 , wherein the patterned silicon-containing mask layer comprises pure silicon or amorphous silicon.

Assignees

• United Microelectronics Corp
• Fujian Jinhua Integrated Circuit Co Ltd

Inventors

• Chang Feng-Yi
• Lee Fu-Che

Classifications

• H10P50/266

  by vapour etching only · CPC title

• H10P50/73 Primary

  using masks for insulating materials · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/4088

  Processes for improving the resolution of the masks · CPC title

• H10P76/405 Primary

  characterised by their composition, e.g. multilayer masks · CPC title