Method of manufacturing graphene film and graphene film manufactured thereby

Patent metadata

Field	Value
Publication number	US-10379442-B2
Application number	US-201314762575-A
Country	US
Kind code	B2
Filing date	Apr 26, 2013
Priority date	Feb 13, 2013
Publication date	Aug 13, 2019
Grant date	Aug 13, 2019

Abstract

According to an aspect of the present invention, there is provided a method of manufacturing a graphene film, the method including: preparing a catalyst metal having at least a surface on which graphene is formed; forming a support layer on the graphene; and isolating the graphene and the support layer from the catalyst metal by dipping the catalyst metal in an electrolytic solution perpendicularly to a liquid surface of the electrolytic solution when a voltage is applied to the catalyst metal.

First claim

The invention claimed is:

1. A method of manufacturing a graphene film, the method comprising:
preparing a catalyst metal having at least a surface on which graphene is formed;
forming a support layer on the graphene; and
isolating the graphene and the support layer from the catalyst metal by dipping a stacked body comprising the catalyst metal, the graphene and the support layer in an electrolytic solution perpendicularly to a liquid surface of the electrolytic solution when a voltage is applied to the catalyst metal of the stacked body,
wherein the electrolytic solution comprises a surfactant, and
wherein the forming the support layer is performed by coating the graphene with a support layer forming material in a liquid phase.

2. The method of claim 1 , wherein the electrolytic solution contains sodium or a hydroxyl group (—OH).

3. The method of claim 1 , wherein the electrolytic solution comprises at least one of sodium hydroxide (NaOH), sodium carbonate (Na 2 CO 3 ), sodium phosphate (Na 3 PO 4 ), sodium silicate (Na 2 SiO 3 ), potassium hydroxide (KOH), calcium hydroxide (Ca(OH) 2 ), barium hydroxide (Ba(OH) 2 ), and magnesium hydroxide (Mg(OH) 2 ).

4. The method of claim 1 , wherein the support layer forming material comprises a photosensitive material.

5. The method of claim 4 , further comprising:
forming a target film on the graphene;
forming a pattern on the support layer by exposing and developing the support layer by using a pattern mask;
patterning the graphene to correspond to the pattern formed on the support layer; and
removing the support layer, after the isolating of the graphene and the support layer.

6. The method of claim 1 , wherein the forming of the support layer is performed by attaching a tape to the graphene.

7. The method of claim 6 , wherein the tape is one of an adhesive tape, a thermal release tape, and a heat sensitive tape.

8. The method of claim 1 , wherein when the stacked body is dipped in the electrolytic solution perpendicularly to the liquid surface of the electrolytic solution, the graphene and the support layer are isolated at the liquid surface and float on the liquid surface.

9. The method of claim 8 , further comprising:
collecting and drying the floating graphene and the support layer; and
forming a target film on the support layer.

10. The method of claim 9 , further comprising:
collecting the floating graphene and the support layer, and cleaning and drying the graphene and the support layer; and
doping the graphene.

11. The method of claim 1 , wherein a thickness of the support layer is about 1 μm to about 60 μm.

12. A graphene film manufactured by a method comprising:
forming a graphene film comprising graphene and a support layer on at least one surface of a catalyst metal; and
isolating the graphene film from the catalyst metal by dipping a stacked body comprising the catalyst metal, the graphene and the support layer in an electrolytic solution perpendicularly to a liquid surface of the electrolytic solution when a voltage is applied to the catalyst metal of the stacked body,
wherein the electrolytic solution comprises a surfactant, and
wherein the forming the support layer is performed by coating the graphene with a support layer forming material in a liquid phase.

13. The graphene film of claim 12 , further comprising a target film formed on the support layer.

14. The graphene film of claim 12 , wherein the graphene further comprises a doping material, and the graphene film further comprises a cover film formed on the graphene.

15. The graphene film of claim 12 , wherein the electrolytic solution contains sodium or a hydroxyl group (—OH).

16. The graphene film of claim 15 , wherein the electrolytic solution comprises at least one of sodium hydroxide (NaOH), sodium carbonate (Na 2 CO 3 ), sodium phosphate (Na 3 PO 4 ), sodium silicate (Na 2 SiO 3 ), potassium hydroxide (KOH), calcium hydroxide (Ca(OH) 2 ), barium hydroxide (Ba(OH) 2 ), and magnesium hydroxide (Mg(OH) 2 ).

17. The graphene film of claim 16 , wherein the electrolytic solution further comprises a surfactant.

18. The graphene film of claim 12 , wherein a thickness of the support layer is about 1 μm to about 60 μm.

Assignees

• Hanwha Aerospace Co Ltd

Inventors

• Na Duck-Hwa
• Lee Eun-Kyu
• Yoon Jong-Hyuk

Classifications

• C01B32/194

  After-treatment · CPC title

• Y10T428/30

  Self-sustaining carbon mass or layer with impregnant or other layer · CPC title

• C25F5/00 Primary

  Electrolytic stripping of metallic layers or coatings · CPC title

• C01B32/186

  by chemical vapour deposition [CVD] · CPC title

• Y10T156/10

  Methods of surface bonding and/or assembly therefor · CPC title