LED bracket, LED bracket array, LED device and LED display screen

Patent metadata

Field	Value
Publication number	US-10378736-B2
Application number	US-201715799272-A
Country	US
Kind code	B2
Filing date	Oct 31, 2017
Priority date	Nov 3, 2016
Publication date	Aug 13, 2019
Grant date	Aug 13, 2019

Abstract

An LED bracket, LED bracket array, LED device and LED display screen are disclosed. The LED bracket includes a PCB circuit substrate and an insulating material. The PCB circuit substrate includes at least two electrically insulated electrode regions. Each electrode region includes a top electrode region, a side electrode region and a bottom electrode region. The side electrode region connects the top electrode region and the bottom electrode region into an integrated structure. The side electrode region is a side surface sunk from outside to an inner part of the PCB circuit substrate. The insulating material is filled in the side electrode region. An upper end surface and a lower end surface of the insulating material do not exceed an upper surface and a lower surface of the PCB circuit substrate. A thickness of the insulating material is less than a thickness of the PCB circuit substrate.

First claim

What is claimed is:

1. A light emitting diode (LED) bracket, comprising a Printed Circuit Board (PCB) circuit substrate and an insulating material, wherein the PCB circuit substrate comprises at least two electrode regions electrically insulated from each other; each of the at least two electrode regions comprises a top electrode region, a side electrode region and a bottom electrode region; the top electrode region and the bottom electrode region are connected into an integrated structure by the side electrode region; the side electrode region is a side surface sunk from an outside to an interior of the PCB circuit substrate; the side electrode region is partially coated by the insulating material; an upper end surface and a lower end surface of the insulating material do not exceed an upper surface and a lower surface of the PCB circuit substrate in a thickness direction thereof, and a thickness h of the insulating material is less than a thickness H of the PCB circuit substrate.

2. The LED bracket according to claim 1 , wherein the upper end surface of the insulating material is at a same level with the upper surface of the PCB circuit substrate; or
the upper end surface and the lower end surface of the insulating material are configured to be located between the upper surface and the lower surface of the PCB circuit substrate.

3. The LED bracket according to claim 1 , wherein the thickness h of the insulating material and the thickness H of the PCB circuit substrate satisfy a relational expression:

1
2

⁢
H

≤
h
≤

2
3

⁢

H
.

⁢

4. The LED bracket according to claim 1 , wherein each of the top electrode region, the side electrode region and the bottom electrode region is respectively provided with a metal layer; and the metal layer of the top electrode region, the metal layer of the side electrode region and the metal layer of the bottom electrode region are connected into an integrated structure.

5. The LED bracket according to claim 4 , wherein the top electrode region is provided with a first gold layer, a first nickel layer and a first copper layer from top to bottom; the side electrode region is provided with a second gold layer, a second nickel layer and a second copper layer from the outside to the PCB circuit substrate; the bottom electrode region is provided with a third gold layer, a third nickel layer and a third copper layer from bottom to top;
the first copper layer of the top electrode region, the second copper layer of the side electrode region and the third copper layer of the bottom electrode region are connected into a first integrated structure; and
the second gold layer of the side electrode region and the third gold layer of the bottom electrode region are connected into a second integrated structure, and the second nickel layer of the side electrode region and the third nickel layer of the bottom electrode region are connected into a third integrated structure; or, the second gold layer of the side electrode region and the first gold layer of the top electrode region are connected into a fourth integrated structure, and the second nickel layer of the side electrode region and the first nickel layer of the top electrode region are connected into a fifth integrated structure.

6. The LED bracket according to claim 5 , wherein a thickness d 3 of the second copper layer of the side electrode region is d 3 ≥10 μm, a thickness d 2 of the second nickel layer is d 2 ≥2.5 μm, and a thickness d 1 of the second gold layer is d 1 ≥0.1 μm.

7. The LED bracket according to claim 4 , wherein the top electrode region is provided with a first gold layer, a first silver layer, a first nickel layer and a first copper layer from top to bottom; the side electrode region is provided with a second gold layer, a second silver layer, a second nickel layer and a second copper layer from the outside to the PCB circuit substrate; the bottom electrode region is provided with a third gold layer, a third silver layer, a third nickel layer and a third copper layer from bottom to top;
the first copper layer of the top electrode region, the second copper layer of the side electrode region and the third copper layer of the bottom electrode region are connected into a first integrated structure; and
the second gold layer of the side electrode region and the third gold layer of the bottom electrode region are connected into a second integrated structure, the second silver layer of the side electrode region and the third silver layer of the bottom electrode region are connected into a sixth integrated structure, and the second nickel layer of the side electrode region and the third nickel layer of the bottom electrode region are connected into a third integrated structure; or, the second gold layer of the side electrode region and the first gold layer of the top electrode region are connected into a fourth integrated structure, the second silver layer of the side electrode region and the first silver layer of the top electrode region are connected into a seventh integrated structure, and the second nickel layer of the side electrode region and the first nickel layer of the top electrode region are connected into a fifth integrated structure.

8. The LED bracket according to claim 7 , wherein a thickness d 3 of the second copper layer of the side electrode region is d 3 ≥10 μm, a thickness d 2 of the second nickel layer is d 2 ≥2.5 μm, a thickness d 4 of the second silver layer is d 4 ≥0.25 pm, and a thickness d 1 of the second gold layer is d 1 ≥0.1 μm.

9. The LED bracket according to claim 4 , wherein the top electrode region is provided with a first gold layer, a first palladium layer, a first nickel layer and a first copper layer from top to bottom; the side electrode region is provided with a second gold layer, a second palladium layer, a second nickel layer and a second copper layer from the outside to the PCB circuit substrate; the bottom electrode region is provided with a third gold layer, a third palladium layer, a third nickel layer and a third copper layer from bottom to top;
the first copper layer of the top electrode region, the second copper layer of the side electrode region and the third copper layer of the bottom electrode region are connected into a first integrated structure; and
the second gold layer of the side electrode region and the third gold layer of the bottom electrode region are connected into a second integrated structure, the second palladium layer of the side electrode region and the third palladium layer of the bottom electrode region are connected into an eighth integrated structure, and the second nickel layer of the side electrode region and the third nickel layer of the bottom electrode region are connected into a third integrated structure; or, the second gold layer of the side electrode region and the first gold layer of the top electrode region are connected into a fourth integrated structure, the second palladium layer of the side electrode region and the first palladium layer of the top electrode region are connected into a ninth integrated structure, and the second nickel layer of the side electrode region and

Assignees

• Foshan Nationstar Optoelectronics Co Ltd

Inventors

• Liu Chuanbiao
• Gu Feng
• Lin Yuanbin
• Luo Xiangling
• Liu Xiaofeng
• Zheng Xi
• Liu Yan

Classifications

• H10W90/00

  Package configurations · CPC title

• H05K1/036

  Multilayers with layers of different types · CPC title

• F21Y2115/10

  Light-emitting diodes [LED] · CPC title

• H05K1/181

  associated with surface mounted components · CPC title

• H05K1/142

  Arrangements of planar printed circuit boards in the same plane, e.g. auxiliary printed circuit insert mounted in a main printed circuit · CPC title