Inverted metamorphic multijunction solar cell including a metamorphic layer

Patent metadata

Field	Value
Publication number	US-10374112-B2
Application number	US-201615045641-A
Country	US
Kind code	B2
Filing date	Feb 17, 2016
Priority date	Sep 24, 2007
Publication date	Aug 6, 2019
Grant date	Aug 6, 2019

Abstract

A multijunction solar cell includes an upper first solar subcell, a second solar subcell adjacent to the first solar subcell, a third solar subcell adjacent to the second solar subcell, and a graded interlayer adjacent to the third solar subcell. The graded interlayer has a band gap that is greater than the band gap of the third solar subcell and is composed of a compositionally step-graded series of (InxGa1-x)yAl1-yAs layers with monotonically changing lattice constant, with x and y having respective values such that the band gap of the graded interlayer remains constant throughout its thickness, and wherein 0<x<1 and 0<y<1. A fourth solar subcell is adjacent to the graded interlayer and is lattice mismatched with respect to the third solar subcell. The graded interlayer provides a transition in lattice constant from the third solar subcell to the fourth solar subcell. A lower fifth solar subcell is adjacent to the fourth solar subcell.

First claim

The invention claimed is:

1. A multijunction solar cell comprising:
an upper first solar subcell having a first band gap;
a second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap of the first solar subcell;
a third solar subcell adjacent to the second solar subcell and having a third band gap smaller than the second band gap of the second solar subcell;
a graded interlayer adjacent to the third solar subcell, the graded interlayer having a fourth band gap that is greater than the third band gap of the third solar subcell, wherein the graded interlayer is composed of a compositionally step-graded series of (In x Ga 1-x ) y Al 1-y As layers with monotonically changing lattice constant, with x and y having respective values such that the band gap of the graded interlayer remains constant throughout its thickness, and wherein 0<x<1 and 0<y<1;
a fourth solar subcell adjacent to the graded interlayer, the fourth solar subcell having a fifth band gap smaller than the third band gap of the third solar subcell wherein the fourth solar subcell is lattice mismatched with respect to the third solar subcell, and wherein the graded interlayer provides a transition in lattice constant from the third solar subcell to the fourth solar subcell; and
a lower fifth solar subcell adjacent to the fourth solar subcell and having a sixth band gap smaller than the fifth band gap of the fourth solar subcell.

2. The multijunction solar cell of claim 1 further comprising a barrier layer adjacent the graded interlayer.

3. The multijunction solar cell of claim 2 wherein the barrier layer is composed of (Al)GaInP.

4. The multijunction solar cell of claim 2 wherein the barrier layer has a thickness of about 0.5 micron.

5. The multijunction solar cell of claim 1 wherein the graded interlayer is disposed between first and second barrier layers.

6. The multijunction solar cell of claim 5 wherein the first barrier layer has a composition different from a composition of the second barrier layer.

7. The multijunction solar cell of claim 1 wherein the fourth band gap of the graded interlayer is constant at 1.5 eV throughout the thickness of the graded interlayer.

8. The multijunction solar cell of claim 7 wherein:
the third band gap of the third solar subcell is in a range of 1.3 eV-1.5 eV; and
the fifth band gap of the fourth solar subcell is in a range of 1.0 eV-1.2 eV.

9. The multijunction solar cell of claim 1 wherein the upper first solar subcell comprises an AlGaInP emitter region and an AlGaInP base region.

10. The multijunction solar cell of claim 1 wherein the second solar subcell comprises:
an emitter region composed of AlGaAs, GaAs, GaInP, GalnAs, GaAsSb or GaInAsN; and
a base region composed of AlGaAs, GaAs, GalnAs, GaAsSb or GaInAsN.

11. The multijunction solar cell of claim 1 wherein the third solar subcell comprises a GaInP emitter region and a GaAs base region.

12. The multijunction solar cell of claim 1 wherein the fourth solar subcell comprises a GaInP emitter region and a AlGaInAs base region.

13. The multijunction solar cell of claim 1 wherein the fifth solar subcell comprises a GaInP emitter region and a GalnAs base region.

14. The multijunction solar cell of claim 1 wherein each of the first, second, third, fourth and fifth solar subcells comprises an emitter region and a base region each of which is composed of GaAs and at least one of In, P or As.

15. A method of manufacturing a solar cell, the method comprising:
providing a first substrate;
forming, on the first substrate, a first solar subcell having a first band gap;
forming a second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap of the first solar subcell;
forming a third solar subcell adjacent to the second solar subcell and having a third band gap smaller than the second band gap of the second solar subcell;
forming a graded interlayer adjacent to the third solar subcell, the graded interlayer having a fourth band gap that is greater than the third band gap of the third solar subcell, wherein the graded interlayer is composed of a compositionally step-graded series of (In x Ga 1-x ) y Al 1-y As layers with monotonically changing lattice constant, with x and y having respective values such that the band gap of the graded interlayer remains constant throughout its thickness, and wherein 0<x<1 and 0<y<1;
forming a fourth solar subcell adjacent to the graded interlayer, the fourth solar subcell having a fifth band gap smaller than the third band gap of the third solar subcell wherein the fourth solar subcell is lattice mismatched with respect to the third solar subcell, and wherein the graded interlayer provides a transition in lattice constant from the third solar subcell to the fourth solar subcell;
forming a fifth solar subcell adjacent to the fourth solar subcell and having a sixth band gap smaller than the fifth band gap of the fourth solar subcell;
mounting a surrogate substrate over the fifth solar subcell; and
subsequently removing the first substrate.

16. The method of claim 15 including providing a metal contact layer over the fifth solar subcell before mounting the surrogate substrate.

17. The method of claim 15 wherein the fourth band gap of the graded interlayer is constant at 1.5 eV throughout the thickness of the graded interlayer.

18. The method of claim 15 including:
forming a first barrier layer over the third solar subcell, wherein the first barrier layer has a composition different from a composition of an adjoining layer of the third solar subcell;
forming the graded interlayer over the first barrier layer; and
forming a second barrier layer over the graded interlayer before forming the fourth solar subcell, wherein the second barrier layer has a composition different from a composition of the graded interlayer, and
wherein the first and second barrier layers are designed to prevent threading dislocations from propagating in a direction of growth of the solar cell or opposite the direction of growth.

19. The method of claim 18 including forming the second barrier layer to have a composition different from the composition of the first barrier layer.

20. The method of claim 19 including:
depositing the graded interlayer on the first barrier layer; and
depositing the second barrier on the graded interlayer.

Assignees

• Solaero Tech Corp

Inventors

• Cornfeld Arthur
• Patel Pravin
• Stan Mark A
• Cho Benjamin
• Sharps Paul R
• Aiken Daniel J
• Spann John

Classifications

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L31/06875 Primary

  Electricity · mapped topic

• H01L31/078

  Electricity · mapped topic

• H01L31/1844

  Electricity · mapped topic