Methods of forming graphene contacts on source/drain regions of finfet devices
US-2017243791-A1 · Aug 24, 2017 · US
Integrated graphene detectors with waveguides
US10374106B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10374106-B2 |
| Application number | US-201715486849-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 13, 2017 |
| Priority date | Apr 13, 2017 |
| Publication date | Aug 6, 2019 |
| Grant date | Aug 6, 2019 |
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Abstract
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The present disclosure relates to semiconductor structures and, more particularly, to graphene detectors integrated with optical waveguide structures and methods of manufacture. The structure includes a plurality of non-planar fin structures composed of substrate material, and a non-planar sheet of graphene material extending entirely over each of the plurality of non-planar fin structures.
First claim
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What is claimed: 1. A structure, comprising: a plurality of non-planar fin structures composed of substrate material; a non-planar sheet of graphene material which is a wraparound structure extending entirely over and filling an entire space between each of the plurality of non-planar fin structures; a plurality of gate contacts provided over the non-planar fin structures and separated from the non-planar sheet of graphene material by insulator material; and source and drain contacts in electrical contact with the non-planar sheet of graphene material between the non-planar fin structures. 2. The structure of claim 1 , wherein the non-planar fin structures are silicon based waveguide structures. 3. The structure of claim 1 , wherein the non-planer sheet of graphene material extends over the insulator material between the plurality of non-planar fin structures. 4. The structure of claim 1 , wherein the non-planar sheet of graphene material is formed directly on the substrate material of the plurality of non-planar fin structures. 5. The structure of claim 1 , wherein the non-planar sheet of graphene material is formed directly on the insulator material on the plurality of non-planar fin structures. 6. The structure of claim 1 , wherein the non-planar sheet of graphene material is formed directly on a material that has a crystalline structure similar to graphene. 7. The structure of claim 1 , wherein the non-planar sheet of graphene material is one to four sheets thick. 8. The structure of claim 1 , further comprising contacts in electrical contact with the non-planar sheet of graphene material, above a top surface of the plurality of non-planar fin structures. 9. The structure of claim 8 , wherein the contacts are finger contacts extending orthogonal to the he plurality of non-planar fin structures. 10. The structure of claim 8 , wherein the plurality of non-planar fin structures and contacts form a PIN detector. 11. The structure of claim 10 , wherein the PIN detector comprises a boron nitride material and the insulator material between the non-planar sheet of graphene material and the non-planar fin structures. 12. The structure of claim 1 , wherein the insulator material comprises silicon dioxide. 13. The structure of claim 12 , wherein the source and drain contacts comprise doped N++ contacts. 14. A structure, comprising: a plurality of non-planar fin structures composed of substrate material; a non-planar sheet of graphene material which is a wraparound structure extending entirely over and filling an entire space between each of the plurality of non-planar fin structures; a plurality of top contacts in direct electrical contact with the non-planar sheet of graphene material using metal vias; and source and drain contacts in electrical contact with the non-planar sheet of graphene material between the non-planar fin structures. 15. The structure of claim 14 , further comprising a waveguide structure which comprises a monolithic unpatterned portion of the substrate material.
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Classifications
Silicon · CPC title
Diode · CPC title
Ridge, rib or the like · CPC title
Combinations of two or more optical elements · CPC title
Electricity · mapped topic
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Frequently asked questions
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- What does patent US10374106B2 cover?
- The present disclosure relates to semiconductor structures and, more particularly, to graphene detectors integrated with optical waveguide structures and methods of manufacture. The structure includes a plurality of non-planar fin structures composed of substrate material, and a non-planar sheet of graphene material extending entirely over each of the plurality of non-planar fin structures.
- Who is the assignee on this patent?
- Globalfoundries Inc, Globalfoundaries Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L31/02327. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 06 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).