Conductive contact point pin and charged particle beam apparatus

Patent metadata

Field	Value
Publication number	US-10373793-B2
Application number	US-201715687886-A
Country	US
Kind code	B2
Filing date	Aug 28, 2017
Priority date	Sep 5, 2016
Publication date	Aug 6, 2019
Grant date	Aug 6, 2019

Abstract

A conductive contact point pin includes a pin body, and a plurality of convex portions formed in a tip portion of the pin body, wherein the conductive contact point pin breaks, by pressing a substrate where a film to be broken is formed on a conductive film from above the film to be broken, the film to be broken in order to be electrically connected to the conductive film.

First claim

What is claimed is:

1. A conductive contact point pin comprising:
a pin body; and
a plurality of convex portions formed in a tip portion of the pin body, wherein
the plurality of convex portions are configured to break a film formed on a conductive film so as to electrically connect the pin body with the conductive film by being pressed on a substrate where the film to be broken is formed on the conductive film from above the film to be broken,
the film to be broken includes chromic oxide (CrO 2 ),
an interspace between adjacent convex portions of the plurality of convex portions is formed to be equal to or greater than 1.3 μm,
a height dimension of the plurality of convex portions is larger than a film thickness of the film to be broken,
the number of the plurality of convex portions is twenty-five or more,
a tip top surface of each of the plurality of convex portions is a square, sides of which have a length in range of 0.2 μm to 0.5 μm, and
the plurality of convex portions are chamfered so that the sides of the tip top surface of each of the plurality of convex portions has a radial dimension smaller than 0.05 μm.

2. The conductive contact point pin according to claim 1 , wherein one of a chromium (Cr) film and a tungsten (W) film is used as the conductive film.

3. The conductive contact point pin according to claim 1 , wherein one of a semiconductor substrate and an exposure mask substrate is used as the substrate.

4. The conductive contact point pin according to claim 1 , wherein each of the plurality of convex portions includes sides forming a tip top surface.

5. The conductive contact point pin according to claim 4 , wherein a shape of the each of the plurality of the convex portions is one of a cylindrical shape, triangular prismatic shape, quadrangular prismatic shape, pentagonal prismatic shape, hexagonal prismatic shape, and other polygonal prismatic shape.

6. The conductive contact point pin according to claim 1 , wherein an interspace between adjacent convex portions of the plurality of convex portions is greater than a width dimension of each of the plurality of the convex portions.

7. A charged particle beam apparatus comprising:
a stage configured to mount thereon a substrate where a film to be broken is formed on a conductive film;
a conductive contact point pin including a pin body and a plurality of convex portions formed in a tip portion of the pin body, the plurality of convex portions configured to break the film to be broken so as to electrically connect the pin body with the conductive film by being pressed on the substrate from above the film to be broken; and
an irradiation mechanism configured to irradiate the substrate with a charged particle beam, in a state where a ground potential is applied to the conductive film via the conductive contact point pin,
wherein the film to be broken includes chromic oxide (CrO 2 ),
an interspace between adjacent convex portions of the plurality of convex portions is formed to be equal to or greater than 1.3 μm,
a height dimension of the plurality of convex portions is larger than a film thickness of the film to be broken,
the number of the plurality of convex portions is twenty-five or more,
a tip top surface of each of the plurality of convex portions is a square, sides of which have a length in range of 0.2 μm to 0.5 μm, and
the plurality of convex portions are chamfered so that the sides of the tip top surface of each of the plurality of convex portions has a radial dimension smaller than 0.05 μm.

8. The apparatus according to claim 7 , further comprising:
a substrate cover where the conductive contact point pin is arranged,
wherein the substrate, covered with the substrate cover, is irradiated with the charged particle beam.

9. The apparatus according to claim 7 , wherein one of a chromium (Cr) film and a tungsten (W) film is used as the conductive film.

10. The apparatus according to claim 7 , wherein one of a semiconductor substrate and an exposure mask substrate is used as the substrate.

11. The apparatus according to claim 7 , wherein each of the plurality of convex portions includes sides forming a tip top surface.

12. The apparatus according to claim 11 , wherein a shape of the each of the plurality of the convex portions is one of a cylindrical shape, triangular prismatic shape, quadrangular prismatic shape, pentagonal prismatic shape, hexagonal prismatic shape, and other polygonal prismatic shape.

13. The apparatus according to claim 7 , wherein an interspace between adjacent convex portions of the plurality of convex portions is greater than a width dimension of each of the plurality of the convex portions.

14. The conductive contact point pin according to claim 1 , wherein the plurality of convex portions are arranged in a shape of a weaving lattice at the tip portion of the pin body.

15. The conductive contact point pin according to claim 14 , wherein the tip portion of the pin body has a round surface formed by the tip top surfaces of the plurality of convex portions.

16. The conductive contact point pin according to claim 7 , wherein the plurality of convex portions are arranged in a weaving lattice form at the tip portion of the pin body.

17. The conductive contact point pin according to claim 16 , wherein the tip portion of the pin body has a round surface formed by the tip top surfaces of the plurality of convex portions.

Assignees

• Nuflare Technology Inc
• Toshiba Kk

Inventors

• Kawaguchi Michihiro
• Akeno Kiminobu
• Kataoka Kenichi
• Umetsu tomoki

Classifications

• H01J2237/31796

  affecting resists · CPC title

• H01J2237/31794

  affecting masks · CPC title

• H01J2237/0041

  Neutralising arrangements · CPC title

• H01J37/3174

  Particle-beam lithography, e.g. electron beam lithography · CPC title

• H01J37/026 Primary

  Means for avoiding or neutralising unwanted electrical charges on tube components · CPC title