Techniques for Probabilistic Dynamic Random Access Memory Row Repair
US-2017103795-A1 · Apr 13, 2017 · US
US10373667B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10373667-B2 |
| Application number | US-201314913872-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 28, 2013 |
| Priority date | Aug 28, 2013 |
| Publication date | Aug 6, 2019 |
| Grant date | Aug 6, 2019 |
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A technique includes determining that a row of memory has been activated at a threshold rate. Upon reaching the threshold rate, a refresh rate for the row of memory and an adjacent row of memory may be increased. Subsequent to the increase, the refresh rate may be returned to a default rate.
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What is claimed is: 1. A method comprising: determining, by a memory controller, that a row of memory has been activated at a threshold rate of activation, wherein the threshold rate of activation is less than a rate of activation at which other rows of the memory are impacted; detecting aggressor rows prior to a row hammer error occurring to mitigate effects of the row hammer error, wherein the aggressor rows are rows of the memory that receive a predetermined number of activations within a period of time; increasing, by the memory controller and in response to the detecting aggressor rows, a refresh rate for a region which contains the row of memory and an adjacent row of memory; delaying, by the memory controller and to implement hysteresis, a decrease in the refresh rate for the region which contains the row of memory and the adjacent row of memory for a period of time; and decreasing, by the memory controller, the refresh rate for the region which contains the row of memory and the adjacent row of memory based on a predetermined operating characteristic for decreasing the refresh rate for the region subsequent to the increase. 2. The method of claim 1 , wherein decreasing the refresh rate for the region which contains the row of memory and the adjacent row of memory based on the predetermined operating characteristic for decreasing the refresh rate for the region comprises decreasing the refresh rate for the region based on an expiration of a period of time. 3. The method of claim 1 , further comprising: monitoring, via the memory controller, the row of memory after increasing the refresh rate for the region to determine whether the row of memory is continually being activated at the threshold rate of activation; and wherein decreasing the refresh rate for the region which contains the row of memory and the adjacent row of memory based on the predetermined operating characteristic for decreasing the refresh rate for the region comprises decreasing the refresh rate for the region based on the monitoring indicating the row of memory is not being activated at the threshold rate of activation. 4. The method of claim 3 , wherein the delaying the decreasing for a period of time is in response to the monitoring indicating the row of memory is not being activated at the threshold rate of activation. 5. The method of claim 1 , wherein increasing the refresh rate for the region comprises increasing the refresh rate for the region by a factor of two. 6. The method of claim 1 , wherein increasing the refresh rate for the region which contains the row of memory and an adjacent row of memory comprises increasing a refresh rate for a device comprising the row of memory and the adjacent row of memory. 7. The method of claim 1 , wherein decreasing the refresh rate for the region which contains the row of memory and the adjacent row of memory comprises returning the refresh rate for the region to a default refresh rate. 8. A method comprising: monitoring, by a computing device, an activated rate of a row of memory in a memory device; determining, by the computing device, that the activation rate of the row of memory is approaching a rate of activation at which other rows of the memory are impacted; detecting aggressor rows prior to a row hammer error occurring to mitigate effects of the row hammer error, wherein the aggressor rows are rows of the memory that receive a predetermined number of activations within a period of time; adjusting, by the computing device and in response to the detecting aggressor rows, a refresh rate for the row of memory and an adjacent row of memory until the activation rate of the row of memory decreases; and delaying a decrease in the refresh rate for the row of memory and an adjacent row of memory for a period of time. 9. The method of claim 8 , wherein determining that the activated rate of the row of memory is approaching the rate of activation at which other rows of the memory are impacted comprises determining that an activate count has reached a predetermined threshold of activation in a period of time. 10. The method of claim 8 , wherein adjusting the refresh rate for the row of memory and the adjacent row of memory comprises increasing a refresh rate for a region including the row of memory and the adjacent row of memory by a preset factor until the activated rate of the row of memory decreases to a predetermined threshold of activation. 11. The method of claim 8 , wherein adjusting the refresh rate for the row of memory and the adjacent row of memory comprises adjusting a refresh rate for a region of the memory device including the row of memory. 12. The method of claim 8 , wherein adjusting the refresh rate for a region which contains the row of memory and the adjacent row of memory comprises adjusting the refresh rate for the region for a period of time after the activated rate of the row of memory decreases. 13. A system comprising: a memory device; and a memory controller coupled to the memory device, the memory controller to: detect aggressor rows prior to a row hammer error occurring to mitigate effects of the row hammer error, wherein the aggressor rows are rows of the memory that are determined to receive a predetermined number of activations within a period of time; adjust, and in response to the detecting aggressor rows, a refresh rate of a row of memory and an adjacent row of memory for a period of time in response to a determination that an activated rate of the row of memory approaches a rate of activation at which other rows of the memory are impacted. 14. The system of claim 13 , wherein the period of time is determined based upon a length of time the activated rate of the row of memory remains above a threshold rate of activation after approaching the rate of activation at which other rows of the memory are impacted. 15. The system of claim 13 , wherein the memory controller is to increase the refresh rate of the row of memory and the adjacent row of memory until the activated rate of the row of memory decreases below a threshold rate of activation for a period of time.
Address translation · CPC title
Configuration or reconfiguration of storage systems · CPC title
Calibration or ate or cycle tuning · CPC title
Single storage device · CPC title
Management or control of the refreshing or charge-regeneration cycles · CPC title
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