Resist underlayer film forming composition for lithography containing hydrolyzable silane having halogen-containing carboxylic acid amide group

Patent metadata

Field	Value
Publication number	US-10372040-B2
Application number	US-201515533237-A
Country	US
Kind code	B2
Filing date	Dec 4, 2015
Priority date	Dec 8, 2014
Publication date	Aug 6, 2019
Grant date	Aug 6, 2019

Abstract

A resist underlayer film forming composition for lithography that can be used as a hard mask. The composition can improve pattern resolution due to having a trihalogenoacetamide skeleton. A resist underlayer film forming composition for lithography comprising a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane comprises a silane having a halogen-containing carboxylic acid amide group.

First claim

The invention claimed is:

1. A resist underlayer film forming composition for lithography comprising: a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein
the hydrolyzable silane comprises a hydrolyzable silane having a trifluoroacetamide group.

2. The resist underlayer film forming composition according to claim 1 , wherein the hydrolyzable silane having a trifluoroacetamide group is a hydrolyzable silane of Formula (1):
R 1 a R 2 b Si(R 3 ) 4−(a+b)   Formula (1)

in Formula (1),
R 1 is an organic group of Formula (2):

in Formula (2),
R 4 is an organic group optionally having an amide group, an amino group, an ether group, or a sulfonyl group and the organic group is a C 1-10 alkylene group, an arylene group, or a combination thereof,
R 5 is a hydrogen atom, and
R 6 is a trifluoromethyl group,

and is bonded to a silicon atom through a Si—C bond;
R 2 is an organic group having an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an amino group, or a cyano group and is bonded to a silicon atom through a Si—C bond;
R 3 is an alkoxy group, an acyloxy group, or a halogen group; and
a is an integer of 1, b is an integer of 0 to 2, and a+b is an integer of 1 to 3.

3. The resist underlayer film forming composition according to claim 1 , wherein the hydrolyzable silane is a combination of the hydrolyzable silane of Formula (1) and other hydrolyzable silane, and the other hydrolyzable silane is at least one hydrolyzable silane selected from the group consisting of
a hydrolyzable silane of Formula (3):
R 7 c Si(R 8 ) 4−c   Formula (3)

in Formula (3), R 7 is an organic group having an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, or a cyano group and is bonded to a silicon atom through a Si—C bond; R 8 is an alkoxy group, an acyloxy group, or a halogen group; and c is an integer of 0 to 3, and
a hydrolyzable silane of Formula (4):
R 9 d Si(R 10 ) 3−d 2 Y e   Formula (4)

in Formula (4), R 9 is an alkyl group and is bonded to a silicon atom through a Si—C bond; R 10 is an alkoxy group, an acyloxy group, or a halogen group; Y is an alkylene group or an arylene group; d is an integer of 0 or 1; and e is an integer of 0 or 1.

4. The resist underlayer film forming composition according to claim 1 , wherein the resist underlayer film forming composition comprises a hydrolysis condensate of a hydrolyzable silane made of a combination of the hydrolyzable silane of Formula (1)
R 1 a R 2 b Si(R 3 ) 4−(a+b)   Formula (1)

in Formula (1), R 1 is an organic group of Formula (2), and the hydrolyzable silane of Formula (3)
R 7 c Si(R 8 ) 4−c   Formula (3)

in Formula (3), R 7 is an organic group having an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, or an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, or a cyano group and is bonded to a silicon atom through a Si—C bond; R 8 is an alkoxy group, an acyloxy group, or a halogen group; and c is an integer of 0 to 3,

as a polymer.

5. The resist underlayer film forming composition according to claim 1 , further comprising an acid.

6. The resist underlayer film forming composition according to claim 1 , further comprising water.

7. The resist underlayer film forming composition according to claim 1 , further comprising an organic polymer compound having a weight average molecular weight of 10,000 to 100,000.

8. The resist underlayer film forming composition according to claim 7 , wherein the organic polymer compound is one or more polymers selected from the group consisting of polyesters, polystyrenes, polyimides, acrylic polymers, methacrylic polymers, polyvinyl ethers, phenol novolacs, naphthol novolacs, polyether, polyamides, and polycarbonates.

9. The resist underlayer film forming composition according to claim 7 , wherein the organic polymer compound comprises an aromatic ring structure selected from the group consisting of a benzene ring, a naphthalene ring, an anthracene ring, a triazine ring, a quinoline ring, and a quinoxaline ring.

10. The resist underlayer film forming composition according to claim 7 , wherein the organic polymer compound comprises hydroxy groups.

11. A resist underlayer film formed on a semiconductor substrate and made of a cured product of the resist underlayer film forming composition as claimed in claim 1 .

12. A method for manufacturing a semiconductor device, the method comprising:
applying the resist underlayer film forming composition as claimed in claim 1 onto a semiconductor substrate and baking the applied composition to form a resist underlayer film;
applying a resist composition onto the resist underlayer film to form a resist film;
exposing the resist film to light;
developing the resist film after exposure to obtain a resist pattern;
etching the resist underlayer film using the resist pattern; and
processing the semiconductor substrate using the patterned resist film and resist underlayer film.

13. A method for manufacturing a semiconductor device, the method comprising:
forming an organic underlayer film on a semiconductor substrate;
applying a resist underlayer film forming composition according to claim 1 onto the organic underlayer film and baking the applied composition to form a resist underlayer film;
applying a resist composition onto the resist underlayer film to form a resist film;
exposing the resist film to light;
developing the resist film after exposure to obtain a resist pattern;
etching the resist underlayer film using the resist pattern;
etching the organic underlayer film using the patterned resist underlayer film; and
processing the semiconductor substrate using the patterned organic underlayer film.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Shibayama Wataru
• Takase Kenji
• Sakamoto Rikimaru

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title