Magnetic field detection sensor

Patent metadata

Field	Value
Publication number	US-10371759-B2
Application number	US-201715824445-A
Country	US
Kind code	B2
Filing date	Nov 28, 2017
Priority date	Nov 30, 2016
Publication date	Aug 6, 2019
Grant date	Aug 6, 2019

Abstract

A magnetic field detection sensor includes a first magneto-impedance element and a second magneto-impedance element each having a magnetic material, a bias coil applying a bias magnetic field to the magnetic body of the first magneto-impedance element, a high-frequency oscillation circuit supplying high-frequency current to the magnetic bodies of the first magneto-impedance element and the second magneto-impedance element, an AC bias circuit supplying AC bias current to the bias coil, a first detection circuit generating a first detection signal based on an impedance change of the first magneto-impedance element in a state of being applied with the bias magnetic field and an external magnetic field, and a second detection circuit which generates a second detection signal based on an impedance change of the second magneto-impedance element in a state of being applied with the external magnetic field and without the bias magnetic field.

First claim

What is claimed is:

1. A magnetic field detection sensor comprising:
a first magneto-impedance element and a second magneto-impedance element each having a magnetic material;
a bias coil applying a bias magnetic field to a magnetic body of the first magneto-impedance element;
a high-frequency oscillation circuit supplying high-frequency current to the magnetic body of the first magneto-impedance element and a magnetic body of the second magneto-impedance element;
an AC bias circuit supplying AC bias current to the bias coil;
a first detection circuit generating a first detection signal based on an impedance change of the first magneto-impedance element in a state of being applied with the bias magnetic field and an external magnetic field;
a second detection circuit generating a second detection signal based on an impedance change of the second magneto-impedance element in a state of being applied with the external magnetic field and without the bias magnetic field; and
a magnetic field calculation unit calculating a magnitude and a direction of the external magnetic field based on the first detection signal and the second detection signal.

2. The magnetic field detection sensor according to claim 1 ,
wherein the first detection circuit generates an electric signal which changes according to a change amount of the impedance from a reference point that is an extremal value position of the impedance characteristic of the first magneto-impedance element in a state of being not applied with the external magnetic field, and
wherein the first detection circuit includes at least one of an amplitude detection circuit detecting amplitudes at each of peaks in which positive and negative of a changing ratio of voltage of the electric signal switches, and a phase detection circuit detecting a timing at which the voltage of the electric signal passes the reference point.

3. The magnetic field detection sensor according to claim 1 ,
wherein the magnetic field calculation unit performs weighting, using a weight which changes according to a situation, on at least one of the first detection signal and the second detection signal so as to calculate the magnitude of the external magnetic field.

4. The magnetic field detection sensor according to claim 1 ,
wherein the magnetic field calculation unit calculates the magnitude and the direction of the external magnetic field using a combination of the first detection signal and the second detection signal, which have different detection characteristics, and
wherein the magnetic field calculation unit performs polarity correction for each region and offset correction on the detection characteristic of at least one of the first detection signal and the second detection signal so that the plurality of detection characteristics become close to each other.

5. The magnetic field detection sensor according to claim 4 ,
wherein the magnetic field calculation unit performs gain adjustment on the detection characteristic of at least one of the first detection signal and the second detection signal so as to bring a non-linear region corresponding to a small magnetic field close to a linear region.

6. A magnetic field detection sensor comprising:
a first magneto-impedance element and a second magneto-impedance element each having a magnetic material;
a bias coil applying a bias magnetic field to a magnetic body of the first magneto-impedance element;
a high-frequency oscillation circuit supplying high-frequency current to the magnetic body of the first magneto-impedance element and a magnetic body of the second magneto-impedance element;
an AC bias circuit supplying AC bias current to the bias coil;
a first detection circuit generating a first detection signal based on an impedance change of the first magneto-impedance element in a state of being applied with the bias magnetic field and an external magnetic field;
a second detection circuit generating a second detection signal based on an impedance change of the second magneto-impedance element in a state of being applied with the external magnetic field and without the bias magnetic field; and
a microcomputer having a program stored therein, wherein execution of the program controls the microcomputer to:
calculate a magnitude and a direction of the external magnetic field based on the first detection signal and the second detection signal.

7. The magnetic field detection sensor according to claim 6 ,
wherein the first detection circuit generates an electric signal which changes according to a change amount of the impedance from a reference point that is an extremal value position of the impedance characteristic of the first magneto-impedance element in a state of being not applied with the external magnetic field, and
wherein the first detection circuit includes at least one of an amplitude detection circuit detecting amplitudes at each of peaks in which positive and negative of a changing ratio of voltage of the electric signal switches, and a phase detection circuit detecting a timing at which the voltage of the electric signal passes the reference point.

8. The magnetic field detection sensor according to claim 6 ,
wherein the microcomputer, upon execution of the program, is configured to:
perform weighting, using a weight which changes according to a situation, on at least one of the first detection signal and the second detection signal so as to calculate the magnitude of the external magnetic field.

9. The magnetic field detection sensor according to claim 6 ,
wherein the microcomputer, upon execution of the program, is configured to:
calculate the magnitude and the direction of the external magnetic field using a combination of the first detection signal and the second detection signal, which have different detection characteristics, and
perform polarity correction for each region and offset correction on the detection characteristic of at least one of the first detection signal and the second detection signal so that the plurality of detection characteristics become close to each other.

10. The magnetic field detection sensor according to claim 9 ,
wherein the microcomputer, upon execution of the program, is configured to:
perform gain adjustment on the detection characteristic of at least one of the first detection signal and the second detection signal so as to bring a non-linear region corresponding to a small magnetic field close to a linear region.

Assignees

• Yazaki Corp

Inventors

• Tanigawa Junya
• Sugiyama Hiroki
• Ishii Makoto
• Syouda Takahiro

Classifications

• G01R33/028 Primary

  Electrodynamic magnetometers · CPC title

• G01R33/063

  Magneto-impedance sensors; Nanocristallin sensors · CPC title