Semiconductor device and method
US-2024395867-A1 · Nov 28, 2024 · US
US10370762B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10370762-B2 |
| Application number | US-201615359090-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 22, 2016 |
| Priority date | Mar 15, 2013 |
| Publication date | Aug 6, 2019 |
| Grant date | Aug 6, 2019 |
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Embodiments of the disclosure provide a method and apparatus for depositing a layer on a substrate. In one embodiment, the method includes exposing a surface of the substrate disposed within a processing chamber to a fluid precursor, directing an electromagnetic radiation generated from a radiation source to a light scanning unit such that the electromagnetic radiation is deflected and scanned across the surface of the substrate upon which a material layer is to be formed, and initiating a deposition process with the electromagnetic radiation having a wavelength selected for photolytic dissociation of the fluid precursor to deposit the material layer onto the surface of the substrate. The radiation source may comprise a laser source, a bright light emitting diode (LED) source, or a thermal source. In one example, the radiation source is a fiber laser producing output in the ultraviolet (UV) wavelength range.
Opening claim text (preview).
The invention claimed is: 1. A substrate processing chamber, comprising: a rotatable substrate support having a substrate supporting surface for supporting a substrate to be disposed on the substrate supporting surface, the substrate support operable to vertically move between a loading position and an elevated processing position; a gas supply operable to provide a fluid precursor through a gas inlet into the processing chamber, wherein the gas inlet is disposed at a sidewall of the processing chamber at about the same elevation as the substrate support when operated at the elevated processing position, and the gas inlet is configured to flow the fluid precursor radially across a surface of the substrate in a laminar manner; a radiation source operable to emit an electromagnetic radiation; and a light scanning unit, the light scanning unit operable to direct the electromagnetic radiation from the radiation source to scan across the fluid precursor at or near a surface of the substrate, the electromagnetic radiation having a wavelength and a power level selected for photolytic dissociation of the fluid precursor to deposit a material layer onto the surface of the substrate. 2. The substrate processing chamber of claim 1 , wherein the radiation source comprises a laser source, a bright light emitting diode (LED) source, or a thermal source. 3. The substrate processing chamber of claim 1 , further comprising: an optical component disposed along an optical path between the radiation source and the substrate, the optical component operable to shape the electromagnetic energy and project out a line beam in a desired shape to cover a portion or the entire surface of the substrate. 4. A substrate processing chamber, comprising: an upper dome; a lower dome opposing the upper dome; a base ring disposed between the upper dome and the lower dome, the upper dome, the base ring and the lower dome defining an internal region therein; a rotatable substrate support disposed within the internal region; a gas outlet disposed at a sidewall of the base ring; a gas inlet disposed at the sidewall of the base ring opposing the gas outlet, the gas inlet operable to flow a fluid precursor in a laminar manner radially across a top surface of a substrate to be disposed on the substrate support; a radiation source operable to emit an electromagnetic radiation; and a rotary light scanning unit having a plurality of reflecting facets, the rotary light scanning unit is operable to direct the electromagnetic radiation from the radiation source to scan across the fluid precursor at or near the top surface of the substrate, the electromagnetic radiation having a wavelength and a power level selected for photolytic dissociation of the fluid precursor to form a material layer onto the surface of the substrate. 5. The substrate processing chamber of claim 4 , wherein the upper dome and the lower dome are formed of quartz. 6. The substrate processing chamber of claim 4 , further comprising: an optical component disposed along an optical path between the radiation source and the substrate support, the optical component is operable to shape the electromagnetic energy and project out a line beam. 7. The substrate processing chamber of claim 4 , wherein the radiation source comprises a laser source or a bright light emitting diode (LED) source. 8. The substrate processing chamber of claim 4 , wherein the rotatable substrate support is operable to move vertically. 9. The substrate processing chamber of claim 4 , further comprising: an array of heating lamps disposed below the lower dome. 10. The substrate processing chamber of claim 4 , wherein the radiation source is configured to deliver the electromagnetic radiation in a pulsed mode with a pulse duration of about 0.01 microsecond (psec) to about 100 millisecond (msec) and an energy density ranging from 0.1 J/cm 2 to about 1.0 J/cm 2 . 11. A substrate processing chamber, comprising: a top, a bottom, and a sidewall disposed between the top and the bottom, the top, the bottom and the sidewall defining an internal region therein; a rotatable substrate support disposed within the internal region; a gas inlet disposed at the sidewall, the gas inlet is operable to flow a fluid precursor radially across a surface of the substrate support in a laminar manner; a radiation source operable to emit an electromagnetic radiation; and a light scanning unit having a plurality of reflecting facets, the light scanning unit is operable to direct the electromagnetic radiation from the radiation source to scan across the fluid precursor adjacent the surface of the substrate support, the electromagnetic radiation having a wavelength and a power level selected for photolytic dissociation of the fluid precursor to form a material layer. 12. The substrate processing chamber of claim 11 , further comprising: an optical component disposed along an optical path between the radiation source and the substrate support, the optical component operable to shape the electromagnetic energy and project out a line beam. 13. The substrate processing chamber of claim 11 , wherein the radiation source comprises a laser source or a bright light emitting diode (LED) source.
characterised by the chemical composition · CPC title
using chemical vapour deposition [CVD] · CPC title
Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions · CPC title
Epitaxial-layer growth · CPC title
Laminar flow · CPC title
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