Passivation glasses for semiconductor devices

Patent metadata

Field	Value
Publication number	US-10370290-B2
Application number	US-201716075796-A
Country	US
Kind code	B2
Filing date	May 3, 2017
Priority date	Aug 3, 2016
Publication date	Aug 6, 2019
Grant date	Aug 6, 2019

Abstract

A passivation glass coating composition is provided for forming a fired passivation glass layer on a semiconductor substrate having p-n junction. The passivation glass coating composition includes a glass component that is lead free, cadmium free, alkali metal oxides free, and colored transition metal oxides (i.e. metal oxides of V, Fe, Co, Ni, Cr, Cu, Mn) free. The glass component includes bismuth based glasses, and provides a firing temperature range of 500° C. to 900° C., and controlled devitrification. Once fired to a semiconductor device, the fired passivation glass layer provides exceptional device performance including no cracking of the fired passivation glass layer, excellent thermal expansion matching to silicon, good chemical resistance to acid and base, and improved device performance.

First claim

What is claimed is:

1. A semiconductor device including a semiconductor including a p-n junction, and a passivation glass layer fired on the semiconductor and covering a periphery of the p-n junction, wherein prior to firing, the passivation glass layer includes a glass component comprising:
5-56 mole % Bi 2 O 3 ,
15-60 mole % ZnO,
0.1-43 mole % B 2 O 3 ,
0.1-15 mole % Al 2 O 3 ,
4-53 mole % SiO 2 , and
1.5-43 mole % total R 2 O 3 , wherein R represents trivalent ions selected from the group consisting of B 3+ , Al 3+ , La 3+ , Y 3+ , Ga 3+ , In 3+ , Sc 3+ , and lanthanide ions from Ce 3+ to Lu 3+ , and excluding color producing transition metal ions of Mn 3+ , Fe 3+ , Cr 3+ , V 3+ , Co 3+ .

2. The semiconductor device according to claim 1 , wherein the glass component further includes:
0.1-16 mole % BaO, and
0.1-16 mole % MgO.

3. The semiconductor device according to claim 2 , wherein the glass component further includes:
0.1-16 mole % (CaO+SrO), and
(B 2 O 3 +SiO 2 )≤54 mole %.

4. The semiconductor device according to claim 1 , wherein the glass component further includes:
0.1-15 mole % La 2 O 3 , and
0.2-42 mole % (B 2 O 3 +Al 2 O 3 ).

5. The semiconductor device according to claim 1 , wherein the glass component includes:
5-18 mole % Bi 2 O 3 ,
21-45 mole % ZnO,
1.5-23 mole % B 2 O 3 ,
0.1-12 mole % Al 2 O 3 ,
1.5-36 mole % total R 2 O 3 , and
25-48 mole % SiO 2 .

6. The semiconductor device according to claim 1 , wherein the glass component is free of color producing transition metal ions of V, Fe, Co, Ni, Cr, Cu, and Mn.

7. The semiconductor device according to claim 6 , wherein the glass component further includes:
0.1-6 mole % BaO, and
0.1-12 mole % MgO.

8. The semiconductor device according to claim 1 , wherein the glass component includes:
5-15 mole % Bi 2 O 3 ,
25-43 mole % ZnO,
0.1-10 mole % B 2 O 3 ,
5-12 mole % Al 2 O 3 ,
1.5-36 mole % total R 2 O 3 , and
30-48 mole % SiO 2 .

9. The semiconductor device according to claim 8 , wherein the glass component includes 0.1-5 mole % B 2 O 3 .

10. The semiconductor device according to claim 8 , wherein the glass component is free of color producing transition metal ions of V, Fe, Co, Ni, Cr, Cu, and Mn.

11. The semiconductor device according to claim 8 , wherein the glass component further includes:
0.1-2 mole % BaO, and
5-12 mole % MgO.

12. The semiconductor device according to claim 8 , wherein (B 2 O 3 +SiO 2 )≤54 mole %.

13. The semiconductor device according to claim 1 , wherein the glass component has the following ranges of molar ratios of oxides:
(B 2 O 3 +Al 2 O 3 )/SiO 2 =0.1 to 9.0;
(B 2 O 3 +Al 2 O 3 )/ZnO≤5.0; and
R 2 O 3 /SiO 2 =0.1-15.

14. The semiconductor device according to claim 13 , wherein the molar ratio of (B 2 O 3 +Al 2 O 3 )/ZnO is less than or equal to 3.0.

15. The semiconductor device according to claim 13 , wherein:
(B 2 O 3 +Al 2 O 3 )/SiO 2 =0.1 to 1.2;
(B 2 O 3 +Al 2 O 3 )/ZnO≤2.0; and
R 2 O 3 /SiO 2 =0.1-2.0.

16. The semiconductor device according to claim 1 , wherein the glass component comprises at least a first glass frit comprising 10-42 mole % B 2 O 3 , and a second glass frit including 0-10 mole % B 2 O 3 , such that the total amount of B 2 O 3 in the glass component is within the range of 0.1-43 mole %.

17. The semiconductor device according to claim 1 , wherein the fired passivation glass layer includes non-zinc-borate crystals comprising: ZnAl 2 O 4 , Zn 2 SiO 4 , Mg 2 Al 4 Si 5 O 18 , Zn 2 Ti 3 O 8 , ZnTiO 3 , Al 2 SiO 5 , other zinc silicates, other zinc titanates, other silicon zirconates, other aluminum silicates, calcium silicates, or combinations thereof.

18. The semiconductor device according to claim 1 , wherein the glass component further comprises 0.1-5 mole % of TiO 2 , ZrO 2 , GeO 2 , CeO 2 , or combinations thereof.

19. A method of passivating a p-n junction, including:
providing a coating composition including a glass component comprising prior to firing, 5-56 mole % Bi 2 O 3 , 15-60 mole % ZnO, 0.1-43 mole % B 2 O 3 , 0.1-15 mole % Al 2 O 3 , 4-53 mole % SiO2, and 1.5-43 mole % total R 2 O 3 , wherein R represents trivalent ions selected from the group consisting of B 3+ , Al 3+ , La 3+ , Y 3+ , Ga 3+ , In 3+ , Sc 3+ , and lanthanide ions from Ce 3+ to Lu 3+ , and excluding color producing transition metal ions of Mn 3+ , Fe 3+ , Cr 3+ , V 3+ , Co 3+ ;
applying the coating composition to a periphery of a p-n junction; and
firing the coating composition to thereby form a fired passivation glass layer on the periphery of the p-n junction.

20. The method according to claim 19 , wherein the glass component is a mixture of at least two glasses.

Assignees

• Ferro Corp

Inventors

• Sridharan Srinivasan
• Maloney John J
• Sakoske George E
• Prinzbach Gregory R
• Widlewski David
• Davis Jackie
• Smith Bradford

Classifications

• H10P14/68

  Organic materials, e.g. photoresists · CPC title

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• H10W74/43 Primary

  comprising oxides, nitrides or carbides, e.g. ceramics or glasses · CPC title

• C03C3/072

  containing boron · CPC title

• C03C3/108

  containing boron · CPC title