Polarizing apparatus and polarizing method
US-2017114473-A1 · Apr 27, 2017 · US
US10369787B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10369787-B2 |
| Application number | US-201615575644-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 11, 2016 |
| Priority date | May 25, 2015 |
| Publication date | Aug 6, 2019 |
| Grant date | Aug 6, 2019 |
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A piezoelectric thin film is formed by adding a donor element to lead zirconate titanate. In the piezoelectric thin film, a molar ratio of lead to a total sum of zirconium and titanium is 105% or higher, and, when positive and negative coercive electric fields in polarization and electric field hysteresis are referred to as Ec (+) and Ec (−), respectively, a value of |Ec (+) |/|Ec (−) | is 0.5 or more and 1.5 or less.
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The invention claimed is: 1. A piezoelectric thin film obtained by adding a donor element to lead zirconate titanate, wherein a molar ratio of lead to a total sum of zirconium and titanium is 105% or higher, and wherein, when positive and negative coercive electric fields in polarization and electric field hysteresis are referred to as Ec (+) and Ec (−), respectively, a value of |Ec (+) |/|Ec (−) | is 0.5 or more and 1.5 or less; wherein the donor element is lanthanum, wherein a molar ratio of the lanthanum to the total sum of the zirconium and the titanium is 6% or more and 10% or less, and wherein a molar ratio of the zirconium to the total sum of the zirconium and the titanium is 54% or more and 59% or less. 2. The piezoelectric thin film according to claim 1 , wherein internal stress of the film is 50 MPa or more and 250 MPa or less. 3. The piezoelectric thin film according to claim 1 , wherein breaking stress of the film is 400 MPa or more. 4. The piezoelectric thin film according to claim 1 , wherein the donor element is niobium, wherein a molar ratio of the niobium to the total sum of the zirconium and the titanium is 10% or more and 20% or less, and wherein a molar ratio of the zirconium to the total sum of the zirconium and the titanium is 52% or more and 59% or less. 5. A piezoelectric actuator comprising: the piezoelectric thin film according to claim 1 ; and a substrate adapted to support the piezoelectric thin film. 6. The piezoelectric actuator according to claim 5 , wherein, between the substrate and the piezoelectric thin film, a seed layer adapted to control crystalline orientation of the piezoelectric thin film is formed. 7. The piezoelectric actuator according to claim 6 , wherein the seed layer is made of lead lanthanum titanate. 8. The piezoelectric actuator according to claim 5 , further comprising: a pair of electrodes adapted to apply voltage to the piezoelectric thin film. 9. A method for manufacturing the piezoelectric actuator according to claim 6 , comprising: forming the piezoelectric thin film on the seed layer at a film forming rate of 2.5 μm/h or less. 10. An inkjet head comprising: the piezoelectric actuator according to claim 5 ; and a nozzle substrate including a nozzle hole through which ink contained in an opening portion formed in the substrate of the piezoelectric actuator is ejected outward. 11. An inkjet printer comprising: the inkjet head according to claim 10 , wherein ink is ejected from the inkjet head toward a recording medium. 12. The piezoelectric thin film according to claim 1 , wherein the donor element is lanthanum. 13. A method for manufacturing the piezoelectric actuator according to claim 5 , comprising: forming the piezoelectric thin film at a film forming rate of 2.5 μm/h or less. 14. The piezoelectric thin film according to claim 2 , wherein breaking stress of the film is 400 MPa or more. 15. The piezoelectric thin film according to claim 2 , wherein the donor element is lanthanum, wherein a molar ratio of the lanthanum to the total sum of the zirconium and the titanium is 6% or more and 10% or less, and wherein a molar ratio of the zirconium to the total sum of the zirconium and the titanium is 54% or more and 59% or less. 16. The piezoelectric thin film according to claim 2 , wherein the donor element is niobium, wherein a molar ratio of the niobium to the total sum of the zirconium and the titanium is 10% or more and 20% or less, and wherein a molar ratio of the zirconium to the total sum of the zirconium and the titanium is 52% or more and 59% or less. 17. A piezoelectric actuator comprising: the piezoelectric thin film according to claim 2 ; and a substrate adapted to support the piezoelectric thin film. 18. The piezoelectric thin film according to claim 3 , wherein the donor element is lanthanum, wherein a molar ratio of the lanthanum to the total sum of the zirconium and the titanium is 6% or more and 10% or less, and wherein a molar ratio of the zirconium to the total sum of the zirconium and the titanium is 54% or more and 59% or less. 19. The piezoelectric thin film according to claim 3 , wherein the donor element is niobium, wherein a molar ratio of the niobium to the total sum of the zirconium and the titanium is 10% or more and 20% or less, and wherein a molar ratio of the zirconium to the total sum of the zirconium and the titanium is 52% or more and 59% or less.
Lanthanum oxide or oxide-forming salts thereof · CPC title
Oxides (C23C14/10 takes precedence) · CPC title
thin film formation by CVD [chemical vapor deposition] · CPC title
Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof · CPC title
Production of nozzles · CPC title
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