Ceramic Wiring Substrate, Semiconductor Device, And Method For Manufacturing Ceramic Wiring Substrate
US-2015351241-A1 · Dec 3, 2015 · US
US10369665B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10369665-B2 |
| Application number | US-201414777137-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 24, 2014 |
| Priority date | Mar 29, 2013 |
| Publication date | Aug 6, 2019 |
| Grant date | Aug 6, 2019 |
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This brazed structure includes a brazing sheet that has been brazed and that comprises: a core material comprising an aluminum alloy which contains 0.3-1.0 mass %, excluding 0.3 mass %, Si, 0.6-2.0 mass %, excluding 0.6 mass %, Mn, 0.3-1.0 mass %, excluding 0.3 mass %, Cu, and 0.15-0.5 mass %, excluding 0.15 mass %, Mg, with the remainder comprising Al and unavoidable impurities, and has an average crystal grain diameter of 50 μm or larger and in which an Mg—Si intermetallic compound and an Al—Mg—Si—Cu intermetallic compound account for 40% or less of the grain boundaries; and, clad to the core material, a brazing material comprising an Al—Si alloy.
Opening claim text (preview).
The invention claimed is: 1. A brazed joint structure, comprising a brazing sheet which has been brazed and which comprises a core material comprising an aluminum alloy, and a brazing filler material comprising an Al—Si alloy and being clad to at least one surface of the core material, wherein the brazing filler material is clad in a thickness of 15 μm or more and in a clad ratio of from 1 to 25% per surface, the aluminum alloy of the core material comprises Si in an amount of more than 0.3 mass % and 1.0 mass % or less, Mn in an amount of 0.7 mass % or more and 2.0 mass % or less, Cu in an amount of more than 0.3 mass % and 1.0 mass % or less, Mg in an amount of more than 0.15 mass % and 0.5 mass % or less, and Al, wherein the core material has an average grain size of 50 μm or more, and wherein an occupancy of an Mg—Si intermetallic compound and an Al—Mg—Si—Cu intermetallic compound that are present in a grain boundary of the core material is 23% or less. 2. The brazed joint structure according to claim 1 , wherein the aluminum alloy of the core material further comprises Fe in an amount of less than 0.15 mass %. 3. The brazed joint structure according to claim 1 , wherein the aluminum alloy of the core material further comprises Ti in an amount of more than 0.05 mass % and 0.25 mass % or less. 4. The brazed joint structure according to claim 1 , further comprising a sacrificial anode material which is clad to the other surface of the core material. 5. The brazed joint structure according to claim 2 , further comprising a sacrificial anode material which is clad to the other surface of the core material. 6. The brazed joint structure according to claim 3 , further comprising a sacrificial anode material which is clad to the other surface of the core material. 7. The brazed joint structure according to claim 2 , wherein the aluminum alloy of the core material further comprises Ti in an amount of more than 0.05 mass % and 0.25 mass % or less. 8. The brazed joint structure according to claim 7 , further comprising a sacrificial anode material which is clad to the other surface of the core material. 9. The brazed joint structure according to claim 1 , wherein the Al—Si alloy of the brazing filler material comprises Si in an amount of from 4.0 mass % to 12.0 mass %. 10. The brazed joint structure according to claim 1 , wherein the Al—Si alloy of the brazing filler material further comprises Zn in an amount of from 1.0 mass % to 7.0 mass %. 11. The brazed joint structure according to claim 4 , wherein the sacrificial anode material comprises an Al—Zn alloy.
Next to Al-base component · CPC title
Alloys based on aluminium · CPC title
all layers being formed of aluminium or aluminium alloys · CPC title
Al as the principal constituent · CPC title
of aluminium or alloys based thereon · CPC title
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