Cryogenic 2D linear ion trap and uses thereof

Patent metadata

Field	Value
Publication number	US-10366873-B2
Application number	US-201815970348-A
Country	US
Kind code	B2
Filing date	May 3, 2018
Priority date	May 3, 2017
Publication date	Jul 30, 2019
Grant date	Jul 30, 2019

Abstract

Described herein are cryogenic linear ion traps and uses thereof.

First claim

We claim:

1. A rectilinear ion trap comprising:
spaced x and y pairs of flat RF electrodes disposed in the zx and zy plane to define a trap volume, wherein each of the x flat RF electrodes comprise a slit;
a pair of DC plates, wherein the DC plates are coupled to the x and y pairs of flat RF electrodes, wherein the DC plates are disposed in the xy plane, and wherein each DC plate comprises holes configured to receive a fastener;
a base plate, wherein the base pate is coupled to the DC plates, wherein the base plate is positioned on top of the spaced x and y pairs of flat RF electrodes, and wherein the base plate is disposed of in the zy plane, wherein the base plate is parallel to the Y pair of flat RF electrodes, and wherein the base plate comprises holes to receive a fastener,
sapphire spacers, wherein the sapphire spacers have two holes configured to receive a fastener, wherein the sapphire spacers are placed between the base plate and the DC plate, wherein the sapphire spacers are placed between the DC plates and the ends of the x and y flat RF electrodes; and
fasteners, wherein the fasteners are passed through the holes in the DC plates, base plates, x and y flat RF electrodes and sapphire spacers.

2. The rectilinear ion trap of claim 1 , wherein the rectilinear ion trap is configured to operate a cryogenic temperatures.

3. The rectilinear ion trap of claim 1 , further comprising insulating spacers, wherein the insulating spacers are positioned between the ends of the x and y RF electrodes.

4. The rectilinear ion trap of claim 3 , wherein the insulating spacers comprise a Kel-F, PEEK, or Teflon insulating material.

5. The rectilinear ion trap of claim 1 , wherein one or more components of the rectilinear ion trap comprises stainless steel.

6. The rectilinear ion trap of claim 5 , wherein the rectilinear ion trap is configured to operate at cryogenic temperatures.

7. The rectilinear ion trap of claim 5 , wherein one or more components of the rectilinear ion trap comprises copper.

8. The rectilinear ion trap of claim 7 , wherein the rectilinear trap is configured to operate at cryogenic temperatures down to about 12K.

9. The rectilinear ion trap of claim 1 , wherein one or more components of the rectilinear ion trap comprises copper.

10. The rectilinear ion trap of claim 9 , further comprising insulating spacers, wherein the insulating spacers are positioned between the ends of the x and y RF electrodes.

11. The rectilinear ion trap of claim 10 , wherein the rectilinear ion trap is configured to operate at cryogenic temperatures down to about 12K.

12. The rectilinear ion trap of claim 1 , wherein the rectilinear ion trap is configured to perform mass selection of ions and infrared mass spectra analysis inside the rectilinear ion trap.

13. A mass spectrometer comprising:
a rectilinear ion trap comprising:
spaced x and y pairs of flat RF electrodes disposed in the zx and zy plane to define a trap volume, wherein each of the x flat RF electrodes comprise a slit;
a pair of DC plates, wherein the DC plates are coupled to the x and y pairs of flat RF electrodes, wherein the DC plates are disposed in the xy plane, and wherein each DC plate comprises holes configured to receive a fastener;
a base plate, wherein the base pate is coupled to the DC plates, wherein the base plate is positioned on top of the spaced x and y pairs of flat RF electrodes, and wherein the base plate is disposed of in the zy plane, wherein the base plate is parallel to the Y pair of flat RF electrodes, and wherein the base plate comprises holes to receive a fastener,
sapphire spacers, wherein the sapphire spacers have two holes configured to receive a fastener, wherein the sapphire spacers are placed between the base plate and the DC plate, wherein the sapphire spacers are placed between the DC plates and the ends of the x and y flat RF electrodes; and
fasteners, wherein the fasteners are passed through the holes in the DC plates, base plates, x and y flat RF electrodes and sapphire spacers.

14. The mass spectrometer of claim 13 , wherein the rectilinear ion trap is configured to operate a cryogenic temperatures.

15. The mass spectrometer of claim 13 , wherein the rectilinear ion trap further comprises insulating spacers, wherein the insulating spacers are positioned between the ends of the x and y RF electrodes.

16. The mass spectrometer of claim 15 , wherein the insulating spacers comprise Kel-F, PEEK, or Teflon insulating material.

17. The mass spectrometer of claim 13 , wherein one or more components of the rectilinear ion trap is made of stainless steel.

18. The mass spectrometer of claim 13 , wherein in one or more components of the rectilinear ion trap is made of copper.

19. The mass spectrometer of claim 13 , wherein the rectilinear ion trap is configured to perform mass selection of ions and infrared mass spectra analysis inside the rectilinear ion trap.

20. A method of mass spectrometry comprising:
trapping ions in a trap volume of a rectilinear ion trap,
wherein the rectilinear ion trap comprises spaced x and y pairs of flat RF electrodes disposed in the zx and zy plane to define the trap volume, wherein each of the x flat RF electrodes comprise a slit;
a pair of DC plates, wherein the DC plates are coupled to the x and y pairs of flat RF electrodes, wherein the DC plates are disposed in the xy plane, and wherein each DC plate comprises holes configured to receive a fastener;
a base plate, wherein the base pate is coupled to the DC plates, wherein the base plate is positioned on top of the spaced x and y pairs of flat RF electrodes, and wherein the base plate is disposed of in the zy plane, wherein the base plate is parallel to the Y pair of flat RF electrodes, and wherein the base plate comprises holes to receive a fastener,
sapphire spacers, wherein the sapphire spacers have two holes configured to receive a fastener, wherein the sapphire spacers are placed between the base plate and the DC plate, wherein the sapphire spacers are placed between the DC plates and the ends of the x and y flat RF electrodes; and
fasteners, wherein the fasteners are passed through the holes in the DC plates, base plates, x and y flat RF electrodes and sapphire spacers;
removing mass interferences by ejecting some ions from the trap volume;
tagging the ions remaining in the trap volume by pulsing a cooled gas containing the tagging agent into the trap volume;
ejecting untagged ions from the trap volume based on mass; and
irradiating the remaining ions in the trap volume with infrared radiation.

Assignees

• Univ Florida

Inventors

• Polfer Nicolas Camille
• Prox Todd A
• Tesler Larry F
• Bell Matthew
• Cismesia Adam P

Classifications

• H01J49/0031

  Step by step routines describing the use of the apparatus (H01J49/0081 takes precedence) · CPC title

• H01J49/422 Primary

  Two-dimensional RF ion traps (ion guides without mass selection H01J49/062) · CPC title