Metal oxide thin film, method for depositing metal oxide thin film and device comprising metal oxide thin film

Patent metadata

Field	Value
Publication number	US-10366803-B2
Application number	US-201515521907-A
Country	US
Kind code	B2
Filing date	Nov 5, 2015
Priority date	Nov 7, 2014
Publication date	Jul 30, 2019
Grant date	Jul 30, 2019

Abstract

A metal oxide thin film formed of β-MoO 3 includes at least one doping element of the group Re, Mn, and Ru. Further, there is described a method of producing such a metal oxide thin film via sputtering and a thin film device with a metal oxide thin film of β-MoO 3 that includes at least one doping element selected from the group Re, Mn, and Ru.

First claim

The invention claimed is:

1. A metal oxide thin film, comprising a film formed of β-MoO 3 having a monoclinic β-MoO 3 crystal structure and including at least one doping element selected from the group consisting of Re, Mn, and Ru.

2. The metal oxide thin film according to claim 1 , wherein a total doping content of said at least one doping element of the group Re, Mn, and Ru lies in a range from 0 to 10 at %.

3. The metal oxide thin film according to claim 2 , wherein the total doping content of said at least one doping element of the group Re, Mn, and Ru lies in a range from 1 to 3 at %.

4. The metal oxide thin film according to claim 1 , wherein said at least one doping element is Re.

5. The metal oxide thin film according to claim 1 , formed to have an electrical resistivity of below 104 Ω·cm.

6. The metal oxide thin film according to claim 5 , formed to have an electrical resistivity of below 103 Ω·cm.

7. The metal oxide thin film according to claim 6 , formed to have an electrical resistivity of below 102 Ω·cm.

8. The metal oxide thin film according to claim 1 , formed to have an internal optical transmittance to light in a visible range of more than 90%.

9. The metal oxide thin film according to claim 1 , formed to have a refractive index of between 1.5 and 2.

10. The metal oxide thin film according to claim 1 , wherein said film has a thickness of between 50 and 250 nm.

11. The metal oxide thin film according to claim 1 , wherein said film has a thickness of between 1 and 15 nm.

12. A method of producing a metal oxide thin film, the method comprising the following steps:
providing a substrate;
providing a molybdenum target and a target comprising at least one element selected from the group consisting of Re, Mn, and Ru, or providing a target comprising molybdenum and at least one element selected from the group consisting of Re, Mn, and Ru; and
sputtering the target or targets in an inert gas atmosphere to form a metal oxide thin film having a monoclinic β-MoO 3 crystal structure and including at least one doping element selected from the group consisting of Re, Mn, and Ru.

13. The method according to claim 12 , wherein the inert gas atmosphere comprises up to 40 vol % O 2 .

14. The method according to claim 12 , further comprising a step of annealing.

15. A thin film device, comprising at least one metal oxide thin film according to claim 1 .

16. The thin film device according to claim 15 , which further comprises a substrate of glass or polymer.

17. An electrochromic window device or a touch panel device, comprising a metal oxide thin film according to claim 1 .

Assignees

• Plansee Se

Inventors

• Hitosugi Taro

Classifications

• C04B35/62218

  obtaining ceramic films, e.g. by using temporary supports · CPC title

• C23C14/083

  of refractory metals or yttrium · CPC title

• G02F1/1523 Primary

  comprising inorganic material · CPC title

• G02F1/13338

  Input devices, e.g. touch panels · CPC title

• C04B35/495 Primary

  based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates · CPC title