Regenerative current detection circuit, charge current detection circuit, and motor current detection system

Patent metadata

Field	Value
Publication number	US-10365679-B2
Application number	US-201715690258-A
Country	US
Kind code	B2
Filing date	Aug 29, 2017
Priority date	Jan 11, 2017
Publication date	Jul 30, 2019
Grant date	Jul 30, 2019

Abstract

A regenerative current detection circuit includes a first power MOS transistor that is configured as a current mirror to a second power MOS transistor connected to drive a motor winding, a first feedback amplifier that compares a first regenerative current that flows in the first power MOS transistor with a second regenerative current that flows in the second power MOS transistor and outputs a comparison result, the first regenerative current being obtained by multiplying the second regenerative current by a current mirror ratio, and a current detection circuit that outputs a detection current based on the comparison result.

First claim

What is claimed is:

1. A regenerative current detection circuit comprising:
a first power MOS transistor that is configured as a current mirror to a second power MOS transistor connected to drive a motor winding;
a first feedback amplifier that compares a first regenerative current that flows in the first power MOS transistor with a second regenerative current that flows in the second power MOS transistor and outputs a comparison result, the second regenerative current being obtained by multiplying the first regenerative current by a current mirror ratio; and
a current detection circuit that outputs a detection current based on the comparison result.

2. The regenerative current detection circuit according to claim 1 , wherein
the current detection circuit includes a first transistor, a second transistor, and a third transistor,
the first transistor is turned ON by an output signal of the first feedback amplifier which is input to a control terminal of the first transistor,
the second transistor and the third transistor constitute a first current mirror circuit,
one end of the second transistor is connected to a control terminal of the third transistor and one end of the first transistor, and
the control terminal of the third transistor is connected to the control terminal of the second transistor, and the third transistor outputs the detection current when the first transistor is turned ON.

3. The regenerative current detection circuit according to claim 1 ,
wherein a negative input of the feedback amplifier is connected to a source of the second power MOS transistor and a positive input of the feedback amplifier is connected to a source of the first power MOS transistor.

4. The charge current detection circuit according to claim 1 ,
wherein the first power MOS transistor is an Nch MOS transistor provided at a low-side.

5. A motor current detection system comprising:
a first power MOS transistor that includes one end being connected to a power supply, the other end being connected to one end of a motor, and a control terminal to which a first control signal is input;
a second power MOS transistor that includes one end being connected to one end of the motor and the other end of the first power MOS transistor and a control terminal to which a second control signal is input;
a third power MOS transistor that includes one end being connected to one end of the motor and the other end of the first power MOS transistor and a control terminal to which the second control signal is input;
a detection transistor unit in which a plurality of power MOS transistors are connected in series, the second control signal being input to the control terminal of each of the plurality of power MOS transistors, and of which one end side is connected to the one end of the motor;
a regenerative current detection unit that includes
a first feedback amplifier that compares a first regenerative current flowing in the second power MOS transistor with a second regenerative current flowing to the third power MOS transistor and outputs the comparison result, and
a first current detection circuit that outputs a first detection current based on the comparison result of the first feedback amplifier; and

a charge current detection unit that includes
a second feedback amplifier that compares a first charge current flowing to the second power MOS transistor with a second charge current flowing to the detection transistor unit and outputs the comparison result, and
a second current detection circuit that outputs a second detection current based on the comparison result of the second feedback amplifier,

wherein the second power MOS transistor and the third power MOS transistor operate as a current mirror when the regenerative current flows, and
the second power MOS transistor and the detection transistor unit operate as a current mirror when the charge current flows.

6. The motor current detection system according to claim 5 , further comprising:
a first conversion unit that converts the first detection current into a first detection voltage;
a second conversion unit that converts the second detection current into a second detection voltage; and
a comparator that compares the first detection voltage with a first reference voltage when detecting the regenerative current, compares the second detection voltage with a second reference voltage when detecting the charge current, and outputs the comparison result.

7. The motor current detection system according to claim 6 , further comprising:
a fourth power MOS transistor that includes one end being connected to the power supply, the other end being connected to the other end of the motor, and a control terminal to which a third control signal is input; and
a fifth power MOS transistor that includes one end being connected to the other end of the motor and the other end of the fourth power MOS transistor and a control terminal to which a fourth control signal is input.

8. The motor current detection system according to claim 5 ,
wherein the second power MOS transistor, the fifth power MOS transistor, and the power MOS transistors of the detection transistor unit are Nch MOS transistors provided at a low-side.

Assignees

• Toshiba Kk

Inventors

• Arai Daisuke
• Asakawa Tooru
• Shimozono Masahiro
• Shiokawa Katsumi

Classifications

• H03K2217/0045

  Full bridges, determining the direction of the current through the load · CPC title

• H03K2217/0027

  Measuring means of, e.g. currents through or voltages across the switch · CPC title

• H03K17/0822

  in field-effect transistor switches · CPC title

• H03F2200/351

  Pulse width modulation being used in an amplifying circuit · CPC title

• H03F3/2173

  of the bridge type · CPC title