Semiconductor element test apparatus and semiconductor element test method

Patent metadata

Field	Value
Publication number	US-10365317-B2
Application number	US-201615735356-A
Country	US
Kind code	B2
Filing date	Jun 9, 2016
Priority date	Jun 25, 2015
Publication date	Jul 30, 2019
Grant date	Jul 30, 2019

Abstract

A semiconductor element test apparatus includes a first switch having a switching element, a coil, a second switch, a semiconductor element, a first rectifying element, and a second rectifying element. The first switch, the coil, and the second switch are connected in series to a power source. The semiconductor element is disposed to configure a loop path along with the coil and the second switch when the switching element is switched off. The semiconductor element has a diode element. A cathode electrode of the diode element is connected to a positive electrode of the power source. The second rectifying element is connected to the first rectifying element in series, and has a rectification direction opposite to a rectification direction of the first rectifying element. The first rectifying element and the second rectifying element configure, along with the coil, another loop path which is different from the loop path.

First claim

The invention claimed is:

1. A semiconductor element test apparatus comprising:
a first switch having a switching element;
a coil;
a second switch, wherein the first switch, the coil, and the second switch are connected in series to a power source;
a semiconductor element provided as a test object, wherein the semiconductor element is disposed to configure a loop path along with the coil and the second switch when the switching element of the first switch is switched off, the semiconductor element has a diode element, and a cathode electrode of the diode element is connected to a positive electrode of the power source;
a first rectifying element; and
a second rectifying element connected to the first rectifying element in series, the second rectifying element having a rectification direction opposite to a rectification direction of the first rectifying element,
wherein the first rectifying element and the second rectifying element configure, along with the coil, another loop path which is different from the loop path including the semiconductor element.

2. The semiconductor element test apparatus according to claim 1 , further comprising
a controller controlling the first switch and the second switch,
wherein
the controller switches on the first switch and switches off the first switch alternatively twice,
the controller switches on the second switch at a time point after a first time switch-on of the first switch and before a second time switch-on of the first switch, and
the controller switches off the second switch at a time point after the second time switch-on of the first switch and before a second time switch-off of the first switch.

3. The semiconductor element test apparatus according to claim 2 , wherein
a recovery operation of the diode element finishes after the second time switch-on of the first switch, and
the controller switches off the second switch after the recovery operation of the diode element is finished and before the second time switch-off of the first switch.

4. The semiconductor element test apparatus according to claim 2 , further comprising
a breakdown detector detecting a breakdown of the semiconductor element,
wherein, only when the breakdown detector detects the breakdown of the semiconductor element, the controller switches off the second switch at a time point after the second time switch-on of the first switch and before the second time switch-off of the first switch.

5. The semiconductor element test apparatus according to claim 4 , wherein
the breakdown detector detects the breakdown of the semiconductor element by setting a predetermined value of a backward current flowing through the semiconductor element as a threshold value, and
the threshold value is set to a value higher than a peak value of the backward current in case that the semiconductor element is properly operating without a breakdown.

6. The semiconductor element test apparatus according to claim 4 , further comprising
a protection switch connected in series to the power source,
wherein
the controller switches on the protection switch before a first time switch-off of the first switch, and switches off the protection switch when the breakdown of the semiconductor element is detected by the breakdown detector, and
the second switch is switched off after the breakdown of the semiconductor element is detected and before a switch-off of the protection switch.

7. The semiconductor element test apparatus according to claim 1 , further comprising
a protect element,
wherein
the protect element is disposed to configure the loop path along with the semiconductor element, the coil, and the second switch when the switching element of the first switch is switched off,
the protect element has a rectification direction same as a rectification direction of the diode element, and
the protect element has a protect diode element having a larger breakdown strength than a breakdown strength of the semiconductor element.

8. The semiconductor element test apparatus according to claim 1 , wherein
the first rectifying element is provided by a Zener diode,
the first rectifying element is connected to have the rectification direction opposite to a flowing direction of a current generated by a counter electromotive force of the coil, and
the counter electromotive force of the coil is generated when the second switch is switched off.

9. The semiconductor element test apparatus according to claim 8 , wherein
a reverse breakdown voltage of the first rectifying element is higher than a sum of a maximum value of a forward voltage applied to the diode element when a flyback current flows through the diode element and a switch-on voltage of the second switch.

10. The semiconductor element test apparatus according to claim 7 , wherein
the first rectifying element is provided by a Zener diode,
the first rectifying element is connected to have the rectification direction opposite to a flowing direction of a current generated by a counter electromotive force of the coil,
the counter electromotive force of the coil is generated when the second switch is switched off, and
a reverse breakdown voltage of the first rectifying element is higher than a sum of a maximum value of a forward voltage applied to the diode element when a flyback current flows through the diode element, a maximum value of a forward voltage applied to the protect diode element when the flyback current flows through the protect diode element, and a switch-on voltage of the second switch.

11. The semiconductor element test apparatus according to claim 8 , wherein
a reverse breakdown voltage of the first rectifying element is lower than a voltage obtained by subtracting a voltage of the power source from an avalanche breakdown tolerance of the second switch.

12. A semiconductor element test method for a semiconductor element, wherein the semiconductor element has a diode element which is provided as a test object,
the semiconductor element test method comprising:
connecting a first switch, a coil, and a second switch in series to a power source, wherein the first switch has a switching element;
disposing the semiconductor element to configure a loop path along with the coil and the second switch when the switching element of the first switch is switched off;
connecting a cathode electrode of the diode element to a positive electrode of the power source;
disposing a first rectifying element and a second rectifying element to configure, along with the coil, another loop path which is different from the loop path including the semiconductor element, wherein the second rectifying element is connected to the first rectifying element in series, and the second rectifying element has a rectification direction opposite to a rectification direction of the first rectifying element; and
performing a test of the semiconductor element by switching on and switching off the switching element repeatedly.

13. The semiconductor element test method according to claim 12 , wherein
the first switch is switched on and switched off alternatively twice,
the second switch is switched on at a time point after a first time switch-on of the first switch and before a second time switch-on of the first switch, and
the second switch is switched off at a time point after the second time switch-on of the first switch and before a second time switch-off of the first switch.

14. The semiconductor element test method according to claim 13 , wherein
a recovery operation of the diode element finishes after the second time switch-on of the first switch, and
the second switch is

Assignees

• Denso Corp

Inventors

• Miyata Masanori
• Okabe Yoshifumi

Classifications

• G01R31/2886

  Features relating to contacting the IC under test, e.g. probe heads; chucks (G01R31/2865 takes precedence, test connections, e.g. test sockets, or probes per se, G01R1/04 or G01R1/06) · CPC title

• G01R31/2601 Primary

  Apparatus or methods therefor (G01R31/2607, G01R31/2642 take precedence) · CPC title

• G01R31/2633 Primary

  for measuring switching properties thereof · CPC title