Elevated temperature CMP compositions and methods for use thereof

Patent metadata

Field	Value
Publication number	US-10364373-B2
Application number	US-201715726523-A
Country	US
Kind code	B2
Filing date	Oct 6, 2017
Priority date	Oct 11, 2016
Publication date	Jul 30, 2019
Grant date	Jul 30, 2019

Abstract

CMP compositions providing stable and robust polishing performance at elevated pad or wafer surface temperatures are disclosed, as well as methods for use thereof. The compositions of the disclosure include reaction rate optimizing (RRO) compounds that optimize various chemical reactions occurring in the slurry chemistry at elevated polishing temperatures on the wafer surface, such that removal rate variation within an individual wafer is <10%.

First claim

What is claimed is:

1. A CMP composition, consisting of:
an abrasive;
an oxidizer;
a complexing agent, wherein the complexing agent is selected from the group consisting of amino acids, carboxylic acids, polyamines, ammonia based compounds, quaternary ammonium compounds, inorganic acids, and any combinations thereof;
a corrosion inhibitor;
at least one reaction rate optimizing compound, wherein the reaction rate optimizing compound is at least one selected from the group consisting of potassium sulfates, potassium nitrates, ammonium sulfates, ammonium nitrates, polymeric solvents, alcohols, thiols, phosphates, sulfates, stannates, EDTA, sulfuric acid, salts of sulfuric acid, phosphoric acid, salts of phosphoric acid, nitric acid, salts of nitric acid, hydrochloric acid, salts of hydrochloric acid, amines, KOH, ammonia, and any combinations thereof; and
water,
wherein the concentration of the reaction rate optimizing compound in the composition is from about 10 to about 10000 ppm;
wherein the reaction rate optimizing compound is selected so that the composition exhibits a removal rate variation of less than about 10% over a wafer surface at a temperature range of about 40 degrees Celsius to about 65 degrees Celsius, and
wherein the composition has a pH value that varies less than 0.3 units between about 45 degrees Celsius and about 65 degrees Celsius.

2. The polishing composition of claim 1 wherein the reaction rate optimizing compound optimizes dissolution or precipitation of abrasive particles in the polishing composition.

3. The polishing composition of claim 1 wherein the reaction rate optimizing compound optimizes oxidation or passivation of metal surfaces.

4. The polishing composition of claim 1 wherein the reaction rate optimizing compound optimizes complexation of metal surfaces.

5. The polishing composition of claim 1 wherein the reaction rate optimizing compound is at least one selected from the group consisting of sulfuric acids and salts thereof.

6. The polishing composition of claim 1 wherein the concentration of the reaction rate optimizing compound in the composition is from about 10 to about 1000 ppm.

7. The polishing composition of claim 1 , wherein the abrasive is selected from the group consisting of alumina, fumed silica, colloidal silica, coated particles, titania, ceria, zirconia, and any combinations thereof, and is present in an amount of about 0.2 wt % to about 30 wt %.

8. The polishing composition of claim 1 , wherein the oxidizer is selected from the group consisting of hydrogen peroxide, ammonium persulfate, silver nitrate, ferric nitrates, ferric chlorides, per acids or salts, ozone water, potassium ferricyanide, potassium dichromate, potassium iodate, potassium bromate, vanadium trioxide, hypochlorous acid, sodium hypochlorite, potassium hypochlorite, calcium hypochlorite, magnesium hypochlorite, ferric nitrate, KMnO 4 , and any combinations thereof, and is present in an amount of about 0.1 wt % to about 5 wt %.

9. The polishing composition of claim 1 , wherein the complexing agent is present in an amount of about 1 wt % to about 20 wt %.

10. The polishing composition of claim 1 , wherein the corrosion inhibitor is one or more azoles, and is present in an amount of about 10 parts per million to about 1000 ppm.

11. A CMP composition, consisting of:
an abrasive;
an oxidizer;
a complexing agent, wherein the complexing agent is selected from the group consisting of amino acids, carboxylic acids, polyamines, ammonia based compounds, quaternary ammonium compounds, inorganic acids, and any combinations thereof, and;
a corrosion inhibitor;
at least one reaction rate optimizing compound, wherein the reaction rate optimizing compound comprises sulfuric acid in an amount of 10 to 10000 parts per million, based on the total weight of the composition; and
water,
wherein the composition exhibits a removal rate variation of less than 10% over a wafer surface at a temperature range of 40 degrees Celsius to 65 degrees Celsius, and
wherein the composition has a pH value that varies less than 0.3 units between about 45 degrees Celsius and about 65 degrees Celsius.

12. The CMP composition of claim 11 , wherein the reaction rate optimizing compound comprises sulfuric acid in an amount of 10 to 1000 parts per million, based on the total weight of the composition.

Assignees

• Fujifilm Planar Solutions Llc
• Fujifilm Electronic Mat Usa Inc

Inventors

• Mahulikar Deepak

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• H01L21/3212

  Electricity · mapped topic

• H01L21/7684

  Electricity · mapped topic