Photovoltaic structures having multiple absorber layers separated by a diffusion barrier

Patent metadata

Field	Value
Publication number	US-10361331-B2
Application number	US-201715409142-A
Country	US
Kind code	B2
Filing date	Jan 18, 2017
Priority date	Jan 18, 2017
Publication date	Jul 23, 2019
Grant date	Jul 23, 2019

Abstract

Photovoltaic structures having multiple absorber layers separated by a diffusion barrier are provided. In one aspect, a method of forming an absorber on a substrate includes: depositing a first layer of light absorbing material on the substrate; depositing a diffusion barrier; depositing a second layer of light absorbing material on the diffusion barrier, wherein the first layer of light absorbing material has a different band gap from the second layer of light absorbing material; and annealing the absorber, wherein the diffusion barrier prevents diffusion of elements between the first layer of light absorbing material and the second layer of light absorbing material during the annealing. A solar cell and method for formation thereof are also provided.

First claim

What is claimed is:

1. A method of forming an absorber on a substrate, the method comprising:
depositing a first layer of light absorbing material on the substrate;
depositing a diffusion barrier on the first layer of light absorbing material;
depositing a second layer of light absorbing material on the diffusion barrier to form a stack of layers of light absorbing materials on the substrate, wherein the first layer of light absorbing material has a different band gap from the second layer of light absorbing material, and wherein the stack of layers of light absorbing materials form the absorber on the substrate; and
annealing the absorber, wherein the diffusion barrier prevents diffusion of elements between the first layer of light absorbing material and the second layer of light absorbing material during the annealing,
wherein the method further comprises performing an intermediate anneal of the absorber in a first chalcogen-containing environment after depositing the first layer of light absorbing material but prior to depositing the diffusion barrier, wherein the annealing is performed in a second chalcogen-containing environment, and wherein the second chalcogen-containing environment has a higher sulfur concentration than the first chalcogen-containing environment.

2. The method of claim 1 , wherein the second layer of light absorbing material has a higher band gap than the first layer of light absorbing material.

3. The method of claim 1 , wherein the diffusion barrier comprises a material selected from the group consisting of: graphene, titanium nitride, tantalum nitride, and tungsten nitride.

4. The method of claim 1 , wherein the diffusion barrier comprises graphene, the method further comprising:
depositing the diffusion barrier on the first layer of light absorbing material using exfoliation of the graphene.

5. The method of claim 4 , wherein the diffusion barrier comprises from about 1 layer to about 5 layers of graphene.

6. The method of claim 1 , wherein the first layer of light absorbing material comprises copper, zinc, tin, and at least one of sulfur and selenium, and wherein the second layer of light absorbing material comprises silver, zinc, tin, and at least one of sulfur and selenium.

7. The method of claim 1 , wherein the first layer of light absorbing material comprises copper, zinc, tin, and selenium, and wherein the second layer of light absorbing material comprises copper, zinc, tin, sulfur, and selenium.

8. The method of claim 1 , further comprising:
depositing an additional diffusion barrier on the second layer of light absorbing material; and
depositing an additional layer of light absorbing material on the additional diffusion barrier, wherein the additional layer of light absorbing material has a higher band gap than both the first layer of light absorbing material and the second layer of light absorbing material.

9. The method of claim 8 , wherein the first layer of light absorbing material comprises copper, zinc, tin, and selenium, wherein the second layer of light absorbing material comprises copper, zinc, tin, sulfur, and selenium, and wherein the additional layer of light absorbing material comprises copper, zinc, tin, and sulfur.

10. The method of claim 8 , further comprising:
repeating the depositing the additional diffusion barrier and the depositing the additional layer of light absorbing material x number of times until a desired number of layers have been formed on the stack.

11. A method of forming a solar cell, the method comprising:
coating a substrate with a layer of a conductive material;
forming an absorber on the layer of conductive material by i) depositing a first layer of light absorbing material on the layer of conductive material and performing an intermediate anneal of the absorber in a first chalcogen-containing environment after depositing the first layer of light absorbing material but prior to depositing a diffusion barrier, ii) depositing the diffusion barrier on the first layer of light absorbing material, iii) depositing a second layer of light absorbing material on the diffusion barrier to form a stack of layers of light absorbing materials on the layer of conductive material, wherein the first layer of light absorbing material has a different band gap from the second layer of light absorbing material, iv) annealing the absorber, wherein the diffusion barrier prevents diffusion of elements between the first layer of light absorbing material and the second layer of light absorbing material during the annealing, wherein the annealing is performed in a second chalcogen-containing environment, and wherein the second chalcogen-containing environment has a higher sulfur concentration than the first chalcogen-containing environment;
forming a buffer layer on the absorber;
forming a transparent front contact on the buffer layer; and
forming a metal grid on the transparent front contact.

12. The method of claim 11 , wherein the second layer of light absorbing material has a higher band gap than the first layer of light absorbing material.

13. The method of claim 11 , wherein the diffusion barrier comprises graphene, the method further comprising:
depositing the diffusion barrier on the first layer of light absorbing material using exfoliation of the graphene.

14. The method of claim 11 , wherein the first layer of light absorbing material comprises copper, zinc, tin, and at least one of sulfur and selenium, and wherein the second layer of light absorbing material comprises silver, zinc, tin, and at least one of sulfur and selenium.

15. The method of claim 11 , wherein the first layer of light absorbing material comprises copper, zinc, tin, and selenium, and wherein the second layer of light absorbing material comprises copper, zinc, tin, sulfur, and selenium.

16. The method of claim 11 , wherein the forming of the absorber further comprises v) depositing an additional diffusion barrier on the second layer of light absorbing material and vi) depositing an additional layer of light absorbing material on the additional diffusion barrier, wherein the additional layer of light absorbing material has a higher band gap than both the first layer of light absorbing material and the second layer of light absorbing material.

17. The method of claim 16 , wherein the first layer of light absorbing material comprises copper, zinc, tin, and selenium, wherein the second layer of light absorbing material comprises copper, zinc, tin, sulfur, and selenium, and wherein the additional layer of light absorbing material comprises copper, zinc, tin, and sulfur.

Assignees

• IBM

Inventors

• Antunez Priscilla D
• Ellis Arthur W
• Haight Richard A
• Hannon James B
• Oida Satoshi

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/1864

  Electricity · mapped topic

• H01L31/0352

  Electricity · mapped topic

• H01L31/0725 Primary

  Electricity · mapped topic

• H01L31/0326

  Electricity · mapped topic