Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

Patent metadata

Field	Value
Publication number	US-10361118-B2
Application number	US-201715498945-A
Country	US
Kind code	B2
Filing date	Apr 27, 2017
Priority date	Oct 7, 2016
Publication date	Jul 23, 2019
Grant date	Jul 23, 2019

Abstract

An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming a barrier conductive layer by providing an organometallic precursor on a semiconductor substrate,
the organometallic precursor being represented by one of the following Chemical Formulae 1-3 or 1-4,

forming a metal layer on the barrier conductive layer.

2. The method of claim 1 , wherein
the forming the barrier conductive layer includes providing a nitrogen-containing gas over the substrate during the providing the organometallic precursor, and
the forming the forming the barrier conductive layer includes forming the barrier conductive layer as a tungsten nitride layer.

3. The method of claim 2 , wherein
the forming the metal layer includes providing the organometallic precursor on the barrier conductive layer, and
the metal layer includes a tungsten layer.

4. The method of claim 3 , wherein the forming the metal layer includes providing the organometallic precursor on the barrier conductive layer with a hydrogen gas.

5. A method of forming a layer comprising:
forming a precursor thin film on a substrate,
the precursor thin film including an organometallic precursor,

the organometallic precursor being represented by one of the following Chemical Formulae 1-3 or 1-4,

forming a metal nitride layer by providing a reaction gas over the precursor thin film, the reaction gas including a nitrogen-containing gas; and forming a plurality of metal nitride layers by repeating the forming the precursor thin film and the forming the metal nitride layer at least one time.

6. The method of claim 5 , further comprising:
forming a plurality of reaction material layers alternately stacked with the plurality of metal nitride layers, wherein
the forming the plurality of reaction material layers includes forming a metal atomic layer on a corresponding one of the plurality of metal nitride layers and providing the reaction gas over the metal atomic layer before forming a next one of the plurality of metal nitride layers.

7. The method of claim 5 , wherein
the forming the plurality of metal nitride layers is performed in a process chamber while the process chamber is maintained at a temperature in a range of range of about 200° C. to about 600° C.

Assignees

• Samsung Electronics Co Ltd
• Dnf Co Ltd

Inventors

• Sun Chang-Woo
• Yun Ji-Eun
• Lim Jae-Soon
• Cho Youn-Joung
• Kim Myong-Woon
• Lee Kang-Yong
• Lee Sang-Ick
• Cho Sung-Woo

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10W20/032 Primary

  of conductive barrier, adhesion or liner layers · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title

• C23C16/34

  Nitrides {(C23C16/303 takes precedence)} · CPC title