Magnetic memory device

Patent metadata

Field	Value
Publication number	US-10360960-B2
Application number	US-201715700485-A
Country	US
Kind code	B2
Filing date	Sep 11, 2017
Priority date	Dec 16, 2016
Publication date	Jul 23, 2019
Grant date	Jul 23, 2019

Abstract

According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The third portion includes a first region and a second region. The second region is provided between the first region and the second magnetic layer. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

First claim

What is claimed is:

1. A magnetic memory device, comprising:
a conductive layer including a first portion, a second portion, and a third portion between the first portion and the second portion;
a first magnetic layer separated from the third portion in a first direction crossing a second direction, the second direction being from the first portion toward the second portion;
a second magnetic layer provided between the third portion and the first magnetic layer; and
a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,
the third portion including a first region and a second region, the second region being provided between the first region and the second magnetic layer and including a first metal and boron,
the first region not including boron, or a first concentration of boron in the first region being lower than a second concentration of boron in the second region,
a thickness along the first direction of the second region being not less than 1 nanometer and not more than 7 nanometers,
wherein
the conductive layer further includes a third region and a fourth region,
the second region is between the third region and the fourth region in the second direction, and
the third region and the fourth region do not include boron, or a concentration of boron in the third region and a concentration of boron in the fourth region each are lower than the second concentration.

2. The device according to claim 1 , wherein the first region includes the first metal.

3. The device according to claim 1 , wherein the second magnetic layer does not include boron, or the second magnetic layer includes boron and has a concentration of boron lower than the second concentration.

4. The device according to claim 1 , wherein at least a portion of the second region is amorphous.

5. The device according to claim 1 , wherein the concentration of boron in the second magnetic layer is 30 atomic percent or less.

6. The device according to claim 1 , wherein the first metal includes at least one selected from the group consisting of Ta, W, Re, Os, Ir, Pt, Au, Cu, Ag, and Pd.

7. The device according to claim 1 , wherein the second concentration of boron is not less than 5 atomic percent.

8. The device according to claim 1 , wherein
the first region extends along the second direction between the first portion and the second portion, and
the second region extends along the second direction between the first portion and the second portion.

9. The device according to claim 1 , wherein
the second region further includes oxygen, and
a concentration of oxygen in the second region is not less than 5 atomic percent and not more than 15 atomic percent.

10. The device according to claim 1 , further comprising:
a controller electrically connected to the first portion and the second portion,
the controller implementing
a first operation of supplying a first current to the conductive layer from the first portion toward the second portion, and
a second operation of supplying a second current to the conductive layer from the second portion toward the first portion,

wherein
the controller is further electrically connected to the first magnetic layer,
the controller further implements a third operation and a fourth operation,
in the first operation, the controller sets a potential difference between the first portion and the first magnetic layer to a first voltage,
in the second operation, the controller sets the potential difference between the first portion and the first magnetic layer to the first voltage,
in the third operation, the controller sets the potential difference between the first portion and the first magnetic layer to a second voltage and supplies the first current to the conductive layer,
in the fourth operation, the controller sets the potential difference between the first portion and the first magnetic layer to the second voltage and supplies the second current to the conductive layer,
the first voltage is different from the second voltage,
the first operation causes a memory cell to be in a first memory state, the memory cell includes the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer,
the second operation causes the memory cell to be in a second memory state, and
a memory state of the memory cell substantially does not change between before and after the third operation, and substantially does not change between before and after the fourth operation.

11. The device according to claim 1 , wherein the second region further includes hafnium.

12. A magnetic memory device, comprising:
a conductive layer including a first portion, a second portion, and a third portion between the first portion and the second portion;
a first magnetic layer separated from the third portion in a first direction crossing a second direction, the second direction being from the first portion toward the second portion;
a second magnetic layer provided between the third portion and the first magnetic layer; and
a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,
the third portion including a first region and a second region, the first region including a first metal, the second region being provided between the first region and the second magnetic layer and including the first metal and boron,
the first region not including boron, or a first concentration of boron in the first region being lower than a second concentration of boron in the second region,
wherein
the conductive layer further includes a third region and a fourth region,
the second region is between the third region and the fourth region in the second direction, and
the third region and the fourth region do not include boron, or a concentration of boron in the third region and a concentration of boron in the fourth region each are lower than the second concentration.

13. The device according to claim 12 , wherein a thickness along the first direction of the second region is not less than 1 nanometer and not more than 7 nanometers.

14. The device according to claim 12 , wherein the second magnetic layer does not include boron, or the second magnetic layer includes boron and has a concentration of boron lower than the second concentration.

15. The device according to claim 12 , further comprising
a controller electrically connected to the first portion and the second portion,
the controller implementing
a first operation of supplying a first current to the conductive layer from the first portion toward the second portion, and
a second operation of supplying a second current to the conductive layer from the second portion toward the first portion,

wherein
the controller is further electrically connected to the first magnetic layer,
the controller further implements a third operation and a fourth operation,
in the first operation, the controller sets a potential difference between the first portion and the first magnetic layer to a first voltage,
in the second operation, the controller sets the potential difference between the first portion and the first magnetic layer to the first voltage,
in the third operation, the controller sets the potential difference between the first portion and the first magnetic layer to a second voltage and supplies the first current to the conductive layer,
in the fourth operation, the controller sets the potential difference between the first portion and the first magnetic layer to the second voltage and supplies the second current to the conductive layer,
the first voltage is different f

Assignees

• Toshiba Kk

Inventors

• Kato Yushi
• Oikawa Soichi
• Ishikawa Mizue
• Saito Yoshiaki
• Yoda Hiroaki

Classifications

• G11C11/1653

  Address circuits or decoders · CPC title

• G11C11/5685

  using storage elements comprising metal oxide memory material, e.g. perovskites · CPC title

• G11C11/1657

  Word-line or row circuits · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/14

  Electricity · mapped topic