Metal catalyst, method for manufacturing the metal catalyst and electrochemical reduction method

Patent metadata

Field	Value
Publication number	US-10358731-B2
Application number	US-201615360991-A
Country	US
Kind code	B2
Filing date	Nov 23, 2016
Priority date	Apr 3, 2013
Publication date	Jul 23, 2019
Grant date	Jul 23, 2019

Abstract

This invention relates to a metal catalyst, a manufacturing method of the metal catalyst, and an electrochemical reduction method.
The metal catalyst is manufactured by a method comprising providing a conductor to one side of an insulator, providing a fluid including a metal ion and an electron mediator to the other side of the insulator and providing a voltage to the conductor.
The electrochemical reduction method comprises providing a conductor to one side of an insulator, providing a fluid including reduction material and an electron mediator to the other side of the insulator and providing a voltage to the conductor.

First claim

What is claimed is:

1. A method, comprising:
providing a conductor to one side of an insulator;
providing a fluid including reduction material and an electron mediator to the other side of the insulator;
providing a voltage to the conductor; and
wherein the electron mediator moves into the insulator by the voltage.

2. The method of claim 1 ,
wherein the electron mediator receives electrons from the conductor and provides the electrons to the reduction material.

3. The method of claim 1 ,
wherein the electron mediator is selected from the group consisting of one or more of a hydrogen ion, a hydrogen atom and a hydrogen molecule.

4. The method of claim 1 ,
wherein the fluid comprises a solution or a gas,
the solution comprises an aqueous solution or an organic solution, and
the gas comprises hydrogen gas.

5. The method of claim 4 ,
wherein an electric current flows in the insulator by the voltage, and
the size of the electric current is adjusted by a pH of the solution.

6. The method of claim 1 ,
wherein the conductor comprises a semiconductor or a metal doped by an n-type dopant or a p-type dopant.

7. The method of claim 1 ,
wherein the insulator is a dielectric layer, and
the insulator comprises a semiconductor oxide, a metal oxide, a semiconductor nitride, a metal nitride or a polymer.

8. The method of claim 1 ,
wherein the insulator has a thickness of about 0.5 nm to about 100 μm.

Assignees

• Seoul Nat Univ R&Db Foundation

Inventors

• Chung Taekdong
• Lee Jinyoung

Classifications

• B01J23/42

  Platinum · CPC title

• B01J23/72

  Copper · CPC title

• B01J23/8926

  Copper and noble metals · CPC title

• B01J23/75

  Cobalt · CPC title

• B01J23/44

  Palladium · CPC title