Composite body and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-10358704-B2
Application number	US-201515318138-A
Country	US
Kind code	B2
Filing date	Jul 3, 2015
Priority date	Jul 3, 2014
Publication date	Jul 23, 2019
Grant date	Jul 23, 2019

Abstract

A composite is obtained by press-molding a mixed powder comprising 20-50 vol % of a metal powder and 50-80 vol % of a diamond powder for which a first peak in a volumetric distribution of particle size lies at 5-25 μm, and a second peak lies at 55-195 μm, and a ratio between the area of a volumetric distribution of particle sizes of 1-35 μm and the area of a volumetric distribution of particle sizes of 45-205 μm is from 1:9 to 4:6, thereby obtaining a composite having a high thermal conductivity and a coefficient of thermal expansion close to that of semiconductor devices, which is easy to mold into a prescribed shape.

First claim

The invention claimed is:

1. A composite obtained by press-molding a mixed powder comprising 20-50 vol % of an aluminum powder and 50-80 vol % of a diamond powder for which a first peak in a volumetric distribution of particle size lies at 5-25 μm, and a second peak lies at 55-195 μm, and a ratio between the area of a volumetric distribution of particle sizes of 1-35 μm and the area of a volumetric distribution of particle sizes of 45-205 μm is from 1:9 to 4:6.

2. A heat-dissipating component for use in semiconductor devices, having sequentially formed, on the surface of the composite as in claim 1 , a metal layer comprising (1) an Ni layer having a film thickness of 0.5-6.5 μm, (2) an amorphous Ni alloy layer having a film thickness of 0.5-6.5 μm, and (3) an Au layer having a film thickness of 0.05-4 μm, wherein the total film thickness of the Ni layer and the amorphous Ni alloy layer is 1.0-10 μm.

3. The heat-dissipating component for use in semiconductor devices according to claim 2 , wherein a surface layer composed of an aluminum powder as a main component is formed between the composite and the metal layer.

4. The heat-dissipating component for use in semiconductor devices according to claim 3 , wherein the Ni layer is formed on the surface layer, the amorphous Ni alloy layer is formed on the Ni layer, and the Au layer is formed on the amorphous Ni alloy layer.

5. A method for manufacturing a composite, comprising the steps of:
filling a mold with a mixed powder comprising 20-50 vol % of an aluminum powder and 50-80 vol % of a diamond powder for which a first peak in a volumetric distribution of particle size lies at 5-25 μm, and a second peak lies at 55-195 μm, and a ratio between the area of a volumetric distribution of particle sizes of 1-35 μm and the area of a volumetric distribution of particle sizes of 45-205 μm is from 1:9 to 4:6;
heating the mixed powder to a temperature of at least 300° C. and less than 660° C.; and
press-molding at a molding pressure of 10-300 MPa for a pressing time of 1-30 minutes.

6. The method for manufacturing a composite as in claim 5 , wherein the aluminum powder is an aluminum alloy powder, or a mixed powder comprising aluminum and a metal other than aluminum.

Assignees

• Denka Company Ltd

Inventors

• Ishihara Yosuke
• Miyakawa Takeshi
• Narita Shinya

Classifications

• B22F1/08

  Metallic powder characterised by particles having an amorphous microstructure · CPC title

• B22F1/10

  Metallic powder containing lubricating or binding agents; Metallic powder containing organic material · CPC title

• B22F1/12

  Metallic powder containing non-metallic particles (containing lubricating or binding agents or organic material B22F1/10) · CPC title

• C22C19/03

  based on nickel · CPC title

• B22F2999/00

  Aspects linked to processes or compositions used in powder metallurgy · CPC title