System and method for thermal management using vapor chamber

Patent metadata

Field	Value
Publication number	US-10356945-B2
Application number	US-201615228336-A
Country	US
Kind code	B2
Filing date	Aug 4, 2016
Priority date	Jan 8, 2015
Publication date	Jul 16, 2019
Grant date	Jul 16, 2019

Abstract

In accordance with one aspect of the invention, a thermal management system for electronics includes a vapor chamber that at least partially envelops the electronics, a working fluid contained within the vapor chamber and used to dissipate heat from a part of a heated portion of the electronics and a precision sintered 3D wick structure independently created on some of the interior of the vapor chamber. The precision sintered 3D wick structure transports the working fluid by capillary action from at least one working fluid receptacle to a part of the heated portion of the electronics. In one embodiment of the invention, the 3D vapor chamber may be formed by the additive manufacturing processes. A further example includes precision sintered 3D support structures integrated into the closed 3D vapor chamber. The support structures mainly facilitate to support the 3D closed vapor chamber envelope from collapsing during operation, and add overall structural strength and additionally facilitate transfer of liquids and gas through their internal 3D porous zones.

First claim

What is claimed is:

1. A thermal management system for electronics, comprising:
at least one vapor chamber that at least partially envelops the electronics, wherein the at least one vapor chamber comprises a vapor chamber case with a component side and an opposing vapor side;
a working fluid contained within the vapor chamber, introduced into the vapor chamber case and used to dissipate heat from at least a part of a heated portion of the electronics; and
a precision sintered 3D wick structure independently created on at least some of the interior of the vapor chamber, deployed within the internal space of the vapor chamber and disposed on at least the component side of the vapor chamber case, wherein the precision sintered 3D wick structure transports the working fluid by capillary action from at least one working fluid receptacle to the at least a part of the heated portion of the electronics,
wherein the precision sintered 3D wick structure comprises a plurality of layers of metal build powder particles,
wherein a first collection of metal build powder particles from each of a first group of layers from the plurality of layers of metal build powder particles is sintered to create a 3D porous zone, and
further wherein a second collection of metal build powder particles from each of a second group of layers from the plurality of layers of metal build powder particles is melted to create a 3D nonporous zone.

2. The system according to claim 1 , wherein the first collection of metal build powder particles from each of the first group of layers from the plurality of layers of metal build powder particles is sintered by applying a first predetermined laser spot input power corresponding to a first combination of laser parameters, the first predetermined laser spot input power being between about 60 watts and about 80 watts,
wherein the second collection of metal build powder particles from each of the second group of layers from the plurality of layers of metal build powder particles is melted by applying a second predetermined laser spot input power corresponding a second combination of laser parameters, and
wherein the second predetermined laser spot input power is greater than the first predetermined laser spot input power.

3. The system according to claim 2 , wherein each of the first combination of laser parameters and the second combination of laser parameters comprises at least one of: laser spot size, laser velocity, hatch spacing, build layer thickness, build powder particle size, and build powder distribution.

4. The system according to claim 2 , wherein the metal build powder particles comprise metal build powder particles with diameter between 10 microns and 250 microns, and
wherein the the second predetermined laser spot input power is about 110 watts.

5. The system according to claim 4 , wherein the vapor chamber envelops the electronics in one of: reverse-conformal, and custom-conformal surface geometry.

6. The system according to claim 1 , further comprising one or more precision sintered 3D internal support structures within the vapor chamber, wherein the precision sintered 3D internal support structure supports the vapor chamber structurally from within.

7. The system according to claim 1 , wherein the vapor chamber is formed by additive manufacturing process.

8. A closed 3D vapor chamber formed by additive manufacturing, comprising:
a vapor chamber case with a component side and an opposing vapor side;
a working fluid contained within the closed 3D vapor chamber, introduced into the vapor chamber case and used to dissipate heat from at least a part of a heated portion of a plurality of electronics positioned at least partially within the vapor chamber; and
a precision sintered 3D wick structure independently created on at least some of the interior of the closed 3D vapor chamber, deployed within the internal space of the vapor chamber and disposed on at least the component side of the vapor chamber case, wherein the precision sintered 3D wick structure transports the working fluid by capillary action from the at least one working fluid receptacle to the at least a part of the heated portion of the electronics,
wherein the precision sintered 3D wick structure comprises a plurality of layers of metal build powder particles,
wherein a first collection of metal build powder particles from each of a first group of layers from the plurality of layers of metal build powder particles is sintered to create a 3D porous zone, and
further wherein a second collection of metal build powder particles from each of a second group of layers from the plurality of layers of metal build powder particles is melted to create a 3D nonporous zone.

9. The closed 3D vapor chamber according to claim 8 , wherein the first collection of metal build powder particles from each of the first group of layers from the plurality of layers of metal build powder particles is sintered by applying a first predetermined laser spot input power corresponding to a first combination of laser parameters, and
further wherein the second collection of metal build powder particles from each of the second group of layers from the plurality of layers of metal build powder particles is melted by applying a second predetermined laser spot input power corresponding a second combination of laser parameters.

10. The closed 3D vapor chamber according to claim 9 , wherein each of the first combination of laser parameters and the second combination of laser parameters comprises at least one of: input power value, laser spot size, laser velocity, hatch spacing, build layer thickness, build powder particle size, and build powder distribution.

11. The closed 3D vapor chamber according to claim 10 , wherein the metal build powder particles comprise metal build powder particles with diameter between 10 microns and 250 microns.

12. The closed 3D vapor chamber according to claim 11 , wherein at least part of at least one of: the case of the vapor chamber and the 3D wick structures is compliant, and
wherein the vapor chamber envelops the electronics in one of: conformal, reverse-conformal, and custom-conformal surface geometry.

13. The closed 3D vapor chamber according to claim 8 , wherein the 3D wick structures are non-uniform, and
wherein the plurality of electronics are positioned entirely within the vapor chamber.

14. The closed 3D vapor chamber according to claim 8 , further comprising one or more precision sintered 3D support structures within the closed 3D vapor chamber, wherein the precision sintered 3D support structure supports the vapor chamber structurally from within.

15. The closed 3D vapor chamber according to claim 8 , wherein the precision sintered 3D wick structure comprises at least one of titanium material and Ti64 build powder.

16. A method of thermal management for electronics, comprising:
enveloping the electronics at least partially in at least one 3D vapor chamber formed by additive manufacturing, wherein the at least one vapor chamber comprises a vapor chamber case with a component side and an opposing vapor side;
independently creating a precision sintered 3D wick structure on at least some of the interior of the vapor chamber,
deploying the precision sintered 3D wick structure within the internal space of the vapor chamber,
disposing the precision sintered 3D wick structure on at least the component side of the vapor chamber case;
introducing a working fluid into the vapor chamber case;
transporting the working fluid through the precision sintered 3D wick structure by capillary action; and
dissipa

Assignees

• Gen Electric

Inventors

• Rush Brian
• Sears James William

Classifications

• B22F10/47

  characterised by structural features · CPC title

• B22F10/25

  Direct deposition of metal particles, e.g. direct metal deposition [DMD] or laser engineered net shaping [LENS] · CPC title

• B22F10/366

  Scanning parameters, e.g. hatch distance or scanning strategy · CPC title

• B22F10/28

  Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM] · CPC title

• B22F10/36

  of energy beam parameters · CPC title