Imaging panel and x-ray imaging device including same
US-2018122842-A1 · May 3, 2018 · US
Photoelectric conversion device
US10355040B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10355040-B2 |
| Application number | US-201715770742-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 22, 2017 |
| Priority date | Feb 29, 2016 |
| Publication date | Jul 16, 2019 |
| Grant date | Jul 16, 2019 |
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Abstract
Official abstract text for this publication.
An off-leakage current of a photodiode is reduced in a photoelectric conversion device. A photoelectric conversion device ( 100 ) includes: an oxide semiconductor layer ( 5 ) provided on a substrate ( 1 ); a passivation film ( 6 ) and a planarizing film ( 7 ) which are stacked on the oxide semiconductor layer; and a photodiode ( 9 ) including a lower electrode ( 91 ), a photoelectric conversion layer ( 92 ), and an upper electrode ( 93 ). The lower electrode is connected to a source electrode ( 4 ) via a contact hole provided in the passivation film and the planarizing film. No photoelectric conversion layer is provided directly above the contact hole.
First claim
Opening claim text (preview).
The invention claimed is: 1. A photoelectric conversion device, comprising: a substrate; a thin film transistor provided on the substrate, the thin film transistor including a drain electrode and a source electrode; a plurality of source electrode lines each connected to the source electrode of the thin film transistor and extending in a first direction; a first insulating layer stacked on the thin film transistor; a photodiode including an upper electrode, a lower electrode, and a photoelectric conversion layer which is provided between the upper electrode and the lower electrode; and a second insulating layer stacked on the photodiode, the lower electrode of the photodiode being connected to the drain electrode of the thin film transistor, via a first contact hole secured in the first insulating layer, a source electrode of the photodiode being connected to the upper electrode of the photodiode, via a second contact hole secured in the second insulating layer, no photoelectric conversion layer being provided directly above the first contact hole, no source electrode of the photodiode being provided directly above the thin film transistor. 2. The photoelectric conversion device as set forth in claim 1 , wherein: the source electrode of the photodiode is provided directly above the first contact hole; the first contact hole is provided midway between two adjacent ones of the plurality of source electrode lines; and the source electrode of the photodiode are provided only in a position midway between two adjacent ones of the plurality of source electrode lines. 3. The photoelectric conversion device as set forth in claim 1 , wherein: a line width of the source electrode of the photodiode is constant. 4. The photoelectric conversion device as set forth in claim 1 , wherein: an imaginary straight line connecting the first contact hole and the second contact hole is parallel to the first direction.
Assignees
Inventors
Classifications
SSIS architectures; Circuits associated therewith · CPC title
Electricity · mapped topic
- H01L27/14636Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US10355040B2 cover?
- An off-leakage current of a photodiode is reduced in a photoelectric conversion device. A photoelectric conversion device ( 100 ) includes: an oxide semiconductor layer ( 5 ) provided on a substrate ( 1 ); a passivation film ( 6 ) and a planarizing film ( 7 ) which are stacked on the oxide semiconductor layer; and a photodiode ( 9 ) including a lower electrode ( 91 ), a photoelectric conversion…
- Who is the assignee on this patent?
- Sharp Kk
- What technology area does this patent fall under?
- Primary CPC classification H01L27/14636. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 16 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).