Method of extracting properties of a layer on a wafer
US-2024234216-A9 · Jul 11, 2024 · US
US10352877B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10352877-B2 |
| Application number | US-201715786669-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 18, 2017 |
| Priority date | Sep 3, 2013 |
| Publication date | Jul 16, 2019 |
| Grant date | Jul 16, 2019 |
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A method of determining a physical characteristic of an adhesive material on a semiconductor device element using structured light is provided. The method includes the steps of: (1) applying a structured light pattern to an adhesive material on a semiconductor device element; (2) creating an image of the structured light pattern using a camera; and (3) analyzing the image of the structured light pattern to determine a physical characteristic of the adhesive material. Additional methods and systems for determining physical characteristics of semiconductor devices and elements using structured light are also provided.
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What is claimed: 1. A method of determining a physical characteristic of an adhesive material on a semiconductor device element using structured light on a bonding machine, the method comprising the steps of: (a) dispensing an adhesive material on a semiconductor device element configured to receive a second semiconductor device element through a bonding process on the bonding machine, the second semiconductor device element being configured to be bonded to the semiconductor device element using a bond head assembly of the bonding machine, the second semiconductor device element including conductive pillars configured to be bonded to conductive structures of the semiconductor device element, the adhesive material being configured to be provided between the semiconductor device element and the second semiconductor device element; (b) applying a structured light pattern to the adhesive material on the semiconductor device element using a light source of the bonding machine; (c) creating an image of the structured light pattern using a camera of the bonding machine; and (d) analyzing the image of the structured light pattern on the bonding machine to determine if a physical characteristic of the adhesive material is within a predetermined specification. 2. The method of claim 1 wherein the adhesive material is selected from the group consisting of an epoxy material, a non-conductive paste material, and a curable liquid material. 3. The method of claim 1 wherein the structured light pattern includes at least one of a parallel bar pattern and a grid pattern. 4. The method of claim 1 further comprising a step of adjusting an aspect of the step of dispensing the adhesive material for a subsequent semiconductor device element if it is determined that the physical characteristic is not within the predetermined specification at step (d). 5. The method of claim 4 wherein the step of adjusting is performed using a closed loop process whereby the adjusted aspect is determined automatically at least partially based on the determined physical characteristic. 6. The method of claim 1 wherein each of steps (a), (b), (c), and (d) are performed on a thermo-compression bonding machine. 7. The method of claim 1 wherein the physical characteristic includes at least one of a volume of the adhesive material and a distribution of the adhesive material. 8. A method of determining a physical characteristic of a fillet of an adhesive material applied between elements of a semiconductor device using structured light on a bonding machine, the method comprising the steps of: (a) bonding a first element of a semiconductor device to a second element of the semiconductor device using a bond head assembly on the bonding machine, the second element including conductive pillars bonded to conductive structures of the first element during step (a), whereby an adhesive material is provided in an area between the first element and the second element; (b) applying a structured light pattern to an adhesive fillet of the adhesive material after step (a) using a light source of the bonding machine; (c) creating an image of the structured light pattern using a camera of the bonding machine; and (d) analyzing the image of the structured light pattern on the bonding machine to determine if a physical characteristic of the adhesive fillet is within a predetermined specification. 9. The method of claim 8 wherein the structured light pattern includes at least one of a parallel bar pattern and a grid pattern. 10. The method of claim 8 further comprising a step of adjusting an aspect of a step of dispensing the adhesive material for a subsequent semiconductor device if it is determined that the physical characteristic is not within the predetermined specification at step (d). 11. The method of claim 10 wherein the step of adjusting is performed using a closed loop process whereby the adjusted aspect is determined automatically at least partially based on the determined physical characteristic. 12. The method of claim 8 wherein each of steps (a), (b), (c), and (d) are performed on a thermo-compression bonding machine. 13. The method of claim 8 wherein the physical characteristic includes at least one of a height of the fillet and a length of the adhesive fillet. 14. A method of determining a flatness characteristic of a semiconductor device using structured light on a bonding machine, the method comprising the steps of: (a) securing a semiconductor device using at least one of a pick tool of a bonding machine and a place tool of the bonding machine; (b) creating an image of a structured light pattern reflected by a surface of a semiconductor device using a camera on the bonding machine while the semiconductor device is secured during step (a), the image being created using a light source of the bonding machine; and (c) analyzing the image of the structured light pattern to determine if a flatness characteristic of the semiconductor device is within a predetermined specification. 15. The method of claim 14 wherein the structured light pattern includes at least one of a parallel bar pattern and a grid pattern. 16. The method of claim 14 wherein each of steps (a), (b), and (c) are performed on a thermo-compression bonding machine. 17. The method of claim 14 wherein step (b)includes projecting the structured light pattern from a light source onto a diffuser screen, the projected light pattern being reflected to the camera using the surface of the semiconductor device.
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