Method for producing metal oxide film and metal oxide film

Patent metadata

Field	Value
Publication number	US-10351957-B2
Application number	US-201214384603-A
Country	US
Kind code	B2
Filing date	Mar 28, 2012
Priority date	Mar 28, 2012
Publication date	Jul 16, 2019
Grant date	Jul 16, 2019

Abstract

In a method for producing a metal oxide film according to the present invention, a solution containing zinc is sprayed onto a substrate placed under non-vacuum, and then, a dopant solution containing a dopant is sprayed onto the substrate. After that, a deposited metal oxide film is subjected to a resistance reducing treatment. A molar concentration of the dopant supplied to the substrate with respect to a molar concentration of the zinc supplied to the substrate is not less than a predetermined value.

First claim

The invention claimed is:

1. A method for producing metal oxide film, the method comprising:
(A) spraying a solution comprising zinc onto a substrate placed under non-vacuum;
(B) spraying a dopant solution comprising a dopant onto the substrate, wherein the dopant is at least one of boron, gallium, indium and aluminum; and
(C) performing, on a metal oxide film deposited on the substrate obtained after said spraying (A) and said spraying (B), a resistance reducing treatment by irradiating the metal oxide film with ultraviolet rays that does not involve rearrangement of crystals of the metal oxide film,
wherein a molar concentration of the dopant supplied to the substrate in said spraying (B) with respect to a molar concentration of zinc supplied to the substrate in said spraying is not less than 0.4% when the dopant is at least one of boron, indium and aluminum and is not less than 0.33% when the dopant is gallium.

2. The method according to claim 1 , further comprising
(D) spraying an oxidation source onto the substrate in said spraying (A) and said spraying (B).

3. The method according to claim 2 , wherein the solution in said spraying (A), the oxidation source in said spraying (D), and the dopant solution in said spraying (B) are supplied to the substrate through different systems.

4. The method according to claim 1 , wherein the dopant is boron.

5. The method according to claim 1 , wherein the dopant is gallium.

6. The method according to claim 1 , wherein the dopant is indium.

7. The method according to claim 1 , wherein the dopant is aluminum.

Assignees

• Shirahata Takahiro
• Orita Hiroyuki
• Hiramatsu Takahiro
• Toshiba Mitsubishi Electric Industrial Systems Corp

Inventors

• Shirahata Takahiro
• Orita Hiroyuki
• Hiramatsu Takahiro

Classifications

• C23C18/1295

  with after-treatment of the deposited inorganic material · CPC title

• C23C18/1258

  Spray pyrolysis · CPC title

• C23C18/1216 Primary

  Metal oxides (C23C18/1212 takes precedence) · CPC title

• C23C18/1291

  by heating of the substrate · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title