Stacks having hermetic capping layers over porous ceramic matrix composite structures

US10347982B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10347982-B2
Application numberUS-201615211753-A
CountryUS
Kind codeB2
Filing dateJul 15, 2016
Priority dateApr 10, 2014
Publication dateJul 9, 2019
Grant dateJul 9, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Provided are methods for hermetically sealing the surfaces of the CMC structures with the capping layers, comprising depositing a slurry onto the surface of a CMC structure and treating the CMC structure with the deposited slurry in an oxygen containing environment, thereby forming a stack. These stacks may be used to construct walls of radomes that enclose antennas and other equipment of aerospace vehicles. The capping layers may form smooth external surfaces of the radomes and may hermetically seal the underlying CMC structures. The dielectric properties of these stacks may be configured to minimize interference with operations of the antennas and other equipment deposited within the radome.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for hermetically sealing a surface of a ceramic matrix composite (CMC) structure, the method comprising: depositing a slurry onto the surface of the CMC structure, wherein the CMC structure comprises ceramic fibers and ceramic matrix such that the ceramic fibers are embedded into the ceramic matrix, wherein the ceramic fibers comprise a first oxide, wherein the ceramic matrix comprises a second oxide, wherein the CMC structure has an average porosity of at least about 20%, and wherein the slurry comprises a third oxide, a solvent, and a polymer based binder comprising carbon; and treating the CMC structure with the slurry deposited on the surface of the CMC structure in an oxygen containing environment thereby forming a capping layer on the surface of the CMC structure and removing the polymer based binder while forming the capping layer from the slurry, wherein concentration of carbon in the capping layer is less than 0.1% atomic, wherein the capping layer comprises the third oxide, hermetically seals the CMC structure, and has a surface roughness of less than 50 Ra micro-inches, and wherein a combination of the CMC structure and the capping layer is a radome. 2. The method of claim 1 , wherein the treating comprises a first stage, a second stage, and a third stage, wherein the first stage is performed before the second stage and the third stage, wherein the first stage is performed at a temperature of less than about 100° C., wherein, during the first stage, the solvent is removed from the slurry deposited on the surface of the CMC structure and a first partially fabricated capping layer is formed from the slurry on the surface of the CMC structure, wherein the second stage is performed before the third stage, wherein the second stage is performed at a temperature of between about 150° C. and 500° C., wherein, during the second stage, the polymer based binder is removed from the first partially fabricated capping layer and a second partially fabricated capping layer is formed from the first partially fabricated capping layer on the surface of the CMC structure, wherein the third stage is performed at a temperature of at least about 800° C., and wherein, during the third stage, the second partially fabricated capping layer is melted and redistributed on the surface of the CMC structure and the capping layer is formed from the second partially fabricated capping layer. 3. The method of claim 2 , wherein the second stage is performed in the oxygen containing environment. 4. The method of claim 3 , wherein a concentration of oxygen in the oxygen containing environment during the second stage is between 10% and 30% by volume. 5. The method of claim 2 , wherein the second partially fabricated capping layer consists essentially of the third oxide prior to performing the third stage. 6. The method of claim 2 , wherein the redistribution of the second partially fabricated capping layer on the surface of the CMC structure comprises introducing a portion of the second partially fabricated capping layer into pores of the CMC structure thereby forming an overlapping zone. 7. The method of claim 6 , wherein an average thickness of the overlapping zone is less than 1% of a thickness of the CMC structure. 8. The method of claim 1 , wherein a portion of the slurry is introduced into pores of the CMC structure while depositing the slurry onto the surface of the CMC. 9. The method of claim 8 , wherein the portion of the slurry is introduced into the pores of the CMC structure using mechanical contact or vacuum-pressure cycles. 10. The method of claim 1 , wherein the third oxide comprises one or more of aluminum oxide, boron oxide, calcium oxide, magnesium oxide, and silicon oxide. 11. The method of claim 1 , wherein the third oxide is in a form of glass frit. 12. The method of claim 1 , wherein the third oxide has a different composition than the second oxide and a different composition than the first oxide. 13. The method of claim 1 , wherein the third oxide comprises cordierite. 14. The method of claim 1 , wherein the third oxide comprises magnesium aluminum silicate (2MgO.2Al 2 O 3 .5SiO 2 ). 15. The method of claim 1 , wherein the third oxide comprises magnesium iron aluminum cyclo-silicate ((Mg,Fe) 2 Al 4 Si 5 O 18 ). 16. The method of claim 1 , wherein the first oxide and the second oxide are same. 17. The method of claim 1 , wherein a combination of the CMC structure and the capping layer is a radome. 18. The method of claim 1 , wherein a difference in dielectric constants of the CMC structure and the capping layer is less than 10%, after forming the capping layer on the surface of the CMC structure. 19. The method of claim 1 , wherein the CMC structure has a surface roughness of at least about 100 Ra micro-inches before forming the capping layer on the surface of the CMC structure. 20. The method of claim 1 , wherein one of the first oxide, the second oxide, or the third oxide is boron oxide or calcium oxide.

Assignees

Inventors

Classifications

  • Layered products essentially comprising ceramics, e.g. refractory products · CPC title

  • performed by spraying · CPC title

  • H01Q1/422Primary

    comprising two or more layers of dielectric material (H01Q1/425 takes precedence) · CPC title

  • Modifying the aerodynamic properties of the vehicle, e.g. projecting type aerials · CPC title

  • characterised by the material treated · CPC title

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What does patent US10347982B2 cover?
Provided are methods for hermetically sealing the surfaces of the CMC structures with the capping layers, comprising depositing a slurry onto the surface of a CMC structure and treating the CMC structure with the deposited slurry in an oxygen containing environment, thereby forming a stack. These stacks may be used to construct walls of radomes that enclose antennas and other equipment of aeros…
Who is the assignee on this patent?
Boeing Co
What technology area does this patent fall under?
Primary CPC classification H01Q1/422. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 09 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).