Light detector

Patent metadata

Field	Value
Publication number	US-10347856-B2
Application number	US-201715613180-A
Country	US
Kind code	B2
Filing date	Jun 3, 2017
Priority date	Jul 1, 2016
Publication date	Jul 9, 2019
Grant date	Jul 9, 2019

Abstract

The present disclosure relates to a light detector. The light detector includes a first electrode, a second electrode, a current detector, a power source and a nano-heterostructure. The nano-heterostructure is electrically coupled with the first electrode and the second electrode. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface.

First claim

What is claimed is:

1. A light detector comprising:
a first electrode, a second electrode, a current detector, a power source and a nano-heterostructure; the nano-heterostructure being electrically coupled with the first electrode and the second electrode, wherein a circuit is formed by the first electrode, the second electrode, the current detector, the power source and the nano-heterostructure; and the nano-heterostructure comprises:
a semiconductor layer with a thickness ranging from 1 nanometer to 100 nanometers, and the semiconductor layer comprising a first surface and a second surface, wherein a material of the semiconductor layer is Molybdenum sulfide;
a first carbon nanotube located on the first surface and arranged along a first direction; and
a second carbon nanotube located on the second surface and arranged along a second direction different from the first direction, and the second carbon nanotube being crossed with the first carbon nanotube.

2. The light detector of claim 1 , wherein the first electrode is located at one end of the first carbon nanotube and adhered on a surface of the first carbon nanotube.

3. The light detector of claim 1 , wherein the second electrode is located at one end of the second carbon nanotube and adhered on a surface of the second carbon nanotube.

4. The light detector of claim 1 , wherein a diameter of the first carbon nanotube ranges from 1 nanometer to 10 nanometers.

5. The light detector of claim 1 , wherein a diameter of the second carbon nanotube ranges from 1 nanometer to 10 nanometers.

6. The light detector of claim 1 , wherein a thickness of the semiconductor layer ranges from about 1 nanometer to about 10 nanometers.

7. The light detector of claim 1 , wherein a material of the semiconductor layer is inorganic compound semiconductors, elemental semiconductors, or organic semiconductors.

8. The light detector of claim 1 , wherein a thickness of the semiconductor layer is about 2 nanometers.

9. The light detector of claim 1 , wherein the first carbon nanotube is a metallic carbon nanotube.

10. The light detector of claim 9 , wherein the first carbon nanotube is a single-walled carbon nanotube.

11. The light detector of claim 1 , wherein the second carbon nanotube is a metallic carbon nanotube.

12. The light detector of claim 11 , wherein the second carbon nanotube is a single-walled carbon nanotube.

13. The light detector of claim 1 , wherein an angle between the first carbon nanotube and the second carbon nanotube is larger than 0 degrees and less than or equal to 90 degrees.

14. The light detector of claim 13 , wherein the angle is larger than 60 degrees and less than or equal to 90 degrees.

15. The light detector of claim 14 , wherein the angle is 90 degrees.

16. The light detector of claim 1 , wherein a three-layered stereoscopic structure is formed at an intersection of the first carbon nanotube, and the semiconductor layer, and the second carbon nanotube.

17. The light detector of claim 16 , wherein a cross-sectional area of the three-layered stereoscopic structure ranges from about 0.25 nm 2 to about 1000 nm 2 .

18. The light detector of claim 17 , wherein the cross-sectional area of the three-layered stereoscopic structure ranges from about 0.25 nm 2 to about 100 nm 2 .

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Zhang Jin
• Wei Yang
• Jiang Kai-Li
• Fan Shou-Shan

Classifications

• H01L51/0562

  Electricity · mapped topic

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• H01L51/0026

  Electricity · mapped topic

• C22C26/00 Primary

  Alloys containing diamond {or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes} · CPC title

• H01L51/0012

  Electricity · mapped topic