Photon extraction from ultraviolet light-emitting devices

Patent metadata

Field	Value
Publication number	US-10347805-B2
Application number	US-201815898347-A
Country	US
Kind code	B2
Filing date	Feb 16, 2018
Priority date	Jul 23, 2014
Publication date	Jul 9, 2019
Grant date	Jul 9, 2019

Abstract

In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.

First claim

What is claimed is:

1. An illumination device comprising:
an ultraviolet (UV) light-emitting semiconductor die;
an inorganic rigid lens for extracting light from the light-emitting semiconductor die; and
a layer of non-stoichiometric silica material disposed between the rigid lens and the light-emitting semiconductor die,
wherein the non-stoichiometric silica material comprises silicon, oxygen, and carbon, a carbon content of the non-stoichiometric silica material being greater than 1 ppm and less than 40 atomic percent.

2. The illumination device of claim 1 , wherein the carbon content of the non-stoichiometric silica material is greater than 1 atomic percent.

3. The illumination device of claim 1 , wherein the carbon content of the non-stoichiometric silica material is less than 30 atomic percent.

4. The illumination device of claim 1 , wherein the carbon content of the non-stoichiometric silica material is less than 20 atomic percent.

5. The illumination device of claim 1 , wherein the rigid lens comprises at least one of fused silica, quartz, or sapphire.

6. The illumination device of claim 1 , further comprising an attachment material disposed around at least a portion of the semiconductor die and around at least a portion of the rigid lens, wherein at least a portion of a top surface of the rigid lens facing away from the semiconductor die is not covered by the attachment material.

7. The illumination device of claim 6 , wherein the attachment material comprises a resin.

8. The illumination device of claim 6 , wherein the attachment material is opaque to UV light.

9. The illumination device of claim 6 , wherein a top surface of the attachment material is disposed above a bottom surface of the rigid lens by no more than 0.5 mm.

10. The illumination device of claim 6 , wherein a top surface of the attachment material is disposed above a bottom surface of the rigid lens by no more than 0.3 mm.

11. The illumination device of claim 6 , wherein the attachment material comprises at least one of a mechanical fastener or a clamp.

12. The illumination device of claim 1 , wherein the rigid lens is at least partially hemispherical.

13. The illumination device of claim 1 , wherein the rigid lens has a substantially hemispherical portion and a substantially cylindrical portion disposed thereunder.

14. The illumination device of claim 1 , wherein the rigid lens is a flat plate having first and second substantially parallel and opposing surfaces disposed entirely over the semiconductor die, the layer of non-stoichiometric material being disposed between the semiconductor die and the first surface.

15. The illumination device of claim 1 , wherein at least a portion of a top surface of the rigid lens is at least one of patterned or textured to enhance light emission therefrom.

16. An illumination device comprising:
an ultraviolet (UV) light-emitting semiconductor die;
an inorganic rigid lens for extracting light from the light-emitting semiconductor die; and
a layer of encapsulant disposed between the rigid lens and the light-emitting semiconductor die,
wherein at least a portion of the layer of encapsulant comprises a non-stoichiometric silica material comprising silicon, oxygen, and carbon, a carbon content of the non-stoichiometric silica material being greater than 1 ppm and less than 40 atomic percent.

17. The illumination device of claim 16 , further comprising a second layer of encapsulant proximate the semiconductor die, the second layer of encapsulant comprising silicone.

18. The illumination device of claim 17 , further comprising a barrier material between the semiconductor die and the second layer of encapsulant, the barrier material being opaque to UV light emitted by the semiconductor die.

19. The illumination device of claim 18 , wherein the barrier material comprises aluminum, polytetrafluoroethylene, and/or an opaque resin.

20. The illumination device of claim 18 , wherein the non-stoichiometric silica material consists of silicon, oxygen, and carbon.

21. The illumination device of claim 1 , wherein the non-stoichiometric silica material consists of silicon, oxygen, and carbon.

Assignees

• Kitamura Ken
• Toita Masato
• Ishii Hironori
• Wang Yuting
• Schowalter Leo J
• Chen Jianfeng
• Grandusky James R
• Crystal Is Inc

Inventors

• Kitamura Ken
• Toita Masato
• Ishii Hironori
• Wang Yuting
• Schowalter Leo J
• Chen Jianfeng
• Grandusky James R

Classifications

• H01L33/58

  Electricity · mapped topic

• H01L33/54

  Electricity · mapped topic

• H01L2933/005

  Electricity · mapped topic

• H01L33/56 Primary

  Electricity · mapped topic

• H01L2933/0058

  Electricity · mapped topic