Photovoltaic module package

US10347782B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10347782-B2
Application numberUS-201214236824-A
CountryUS
Kind codeB2
Filing dateAug 6, 2012
Priority dateAug 4, 2011
Publication dateJul 9, 2019
Grant dateJul 9, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A silicon wafer-based photovoltaic module is described, which includes a first outer protective layer and a second outer protective layer, wherein both outer protective layers comprise a low- or no-sodium glass or low- or no-alkali compositions. The photovoltaic modules show resistance to water ingress, no or reduced potential-induced sodium ion drift, and reduced potential induced degradation.

First claim

Opening claim text (preview).

The invention claimed is: 1. A photovoltaic module comprising a first protective layer comprising a sodium-free and alkali-free glass sheet, a second protective layer comprising a sodium-free and alkali-free glass sheet, at least one crystalline silicon photovoltaic structure between the first and second outer protective layers, and an additional glass layer, wherein: the composition of the first protective layer comprises SiO 2 , Al 2 O 3 , and B 2 O 3 , and is sodium-free and alkali-free; the composition of the second protective layer comprises SiO 2 , Al 2 O 3 , and B 2 O 3 , and is sodium-free and alkali-free; the additional glass layer comprises a Na-based glass and is characterized by a thickness and rigidity exceeding that of the first and second protective layers; and the additional glass layer is separated from the photovoltaic structure by a selected one of the first and second protective layers; and the photovoltaic module defines a photovoltaic structure-free zone between the additional glass layer and the selected protective layer. 2. The module of claim 1 , wherein the selected protective layer forms a sodium migration barrier layer between the additional glass layer and the photovoltaic structure. 3. The module of claim 1 , wherein: the photovoltaic structure comprises an encapsulant sheet spacing the first and second protective layers by 0.25 mm, or less; and the first and second protective layers exhibit sufficient flexibility for self-weighted, substantially failure-free bending at a bend radius of less than approximately 100 cm. 4. The module of claim 1 , wherein: the photovoltaic structure comprises an encapsulant sheet spacing the first and second protective layers by 0.25 mm, or less; and the first and second protective layers exhibit sufficient flexibility to conform to deviations in flatness between the first and second protective layers. 5. The module of claim 1 , wherein the additional glass layer is secured directly to the selected protective layer. 6. The module of claim 1 , wherein the first and second protective layers are less than approximately 100 μm in thickness across a substantial entirety of the photovoltaic module. 7. The module of claim 1 , wherein: the first and second protective layers are less than approximately 100 μm in thickness across a substantial entirety of the photovoltaic module; and the additional glass layer has a thickness of greater than 1.5 mm. 8. The module of claim 1 , wherein the photovoltaic module exhibits at least one of: (i) an insulation resistance value of greater than approximately 4001MΩ·m 2 tested under the IEC 61215 measurement guidelines for wet leakage current; (ii) less than 10% output power degradation under the IEC 61215 damp heat standard at approximately 2500 hours of 85° C./85% humidity and −1 kV bias stressing; (iii) less than 10% fill factor degradation under the IEC 61215 damp heat standard at approximately 2500 hours of 85° C./85% humidity and −1 kV bias stressing; and (iv) less than 10% series resistance increase under the IEC 61215 damp heat standard at approximately 2500 hours of 85° C./85% humidity and −1 kV bias stressing. 9. A photovoltaic module comprising a first protective layer comprising a sodium-free and alkali-free glass sheet, a second protective layer comprising a sodium-free and alkali-free glass sheet, at least one crystalline silicon photovoltaic structure between the first and second outer protective layers, an encapsulant sheet spacing the first and second protective layers by 0.25 mm, or less and an additional glass layer, wherein: the composition of the first protective layer comprises SiO 2 , Al 2 O 3 , and B 2 O 3 , and is sodium-free and alkali-free; the composition of the second protective layer comprises SiO 2 , Al 2 O 3 , and B 2 O 3 , and is sodium-free and alkali-free; the first and second protective layers exhibit sufficient flexibility for self-weighted, substantially failure-free bending at a bend radius of less than approximately 100 cm to conform to deviations in flatness between the first and second protective layers; the additional glass layer comprises a Na-based glass and is characterized by a rigidity exceeding that of the first and second protective layers; the first and second protective layers are less than approximately 100 μm in thickness across a substantial entirety of the photovoltaic module; the additional glass layer has a thickness of greater than 1.5 mm; the additional glass layer is separated from the photovoltaic structure by a selected one of the first and second protective layers to form a sodium migration barrier layer between the additional glass layer and the photovoltaic structure; and the photovoltaic module defines a photovoltaic structure-free zone between the additional glass layer and the selected protective layer. 10. The module of claim 1 , wherein the module exhibits an insulation resistance value of greater than 4000 MΩ·m 2 tested under the IEC 61215 measurement guidelines for wet leakage current. 11. The module of claim 1 , further comprising an edge seal between the first and second outer protective layers to form a substantially sealed cavity comprising the photovoltaic structure. 12. The module of claim 1 , wherein the first and second protective layers have a B—OH value of from 0.2 mm −1 to 0.9 mm −1 . 13. The module of claim 1 , wherein at least one of the first and second protective layers has an average surface roughness (R a ) of ≤20 Å. 14. The module of claim 1 , wherein at least one of the first and second protective layers has a thickness below 3 mm and a curvature deformation, W, less than 0.5 micrometer/cm 2 , as described by the equation W=D/L 2 , wherein D is the maximum curvature of glass sheet in μm and L is the diagonal length of glass sheet in cm. 15. The module of claim 1 , wherein at least one of the first and second protective layers has a thickness of 1.8 mm or less. 16. The module of claim 1 , wherein at least one of the first and second protective layers has a thickness of 0.5 mm or less. 17. The module of claim 16 , wherein the first and second protective layers are capable of being processed under roll-to-roll conditions. 18. The module of claim 1 , wherein the additional glass layer has a thickness of greater than 1.5 mm. 19. The module of claim 1 , wherein the module exhibits less than 5% output power degradation under the IEC 61215 damp heat standard at approximately 2500 hours of 85° C./85% humidity and −1 kV bias stressing. 20. The module of claim 1 , wherein the module exhibits less than 5% fill factor degradation under the IEC 61215 damp heat standard at approximately 2500 hours of 85° C./85% humidity and −1 kV bias stressing. 21. The module of claim 1 , wherein the module exhibits less than 5% series resistance increase under exposure to approximately 2500 hours of 85° C./85% humidity per the IEC 61215 damp heat standard and −1 kV bias stressing. 22. The module of claim 1 , wherein the first and second protective layers have an average surface roughness (R a ) of ≤20 Å. 23. The module of claim 1 , wherein the first and second protective layers have respective thicknesses below 3 mm and respective curvature deformations, W, less than 0.5 micrometer/cm 2 , as described by the equation W=D/L 2 , wherein D is the maximum curvature of glass sheet in μm and L is the diagonal length of glass sheet in cm. 24. The m

Assignees

Inventors

Classifications

  • containing an oxide of a divalent metal · CPC title

  • Photovoltaic [PV] energy · CPC title

  • Electricity · mapped topic

  • containing aluminium · CPC title

  • containing calcium oxide, e.g. common sheet or container glass · CPC title

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What does patent US10347782B2 cover?
A silicon wafer-based photovoltaic module is described, which includes a first outer protective layer and a second outer protective layer, wherein both outer protective layers comprise a low- or no-sodium glass or low- or no-alkali compositions. The photovoltaic modules show resistance to water ingress, no or reduced potential-induced sodium ion drift, and reduced potential induced degradation.
Who is the assignee on this patent?
Aitken Bruce Gardiner, Krol Mark Francis, Webb James Ernest, and 1 more
What technology area does this patent fall under?
Primary CPC classification H01L31/0488. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 09 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).