Semiconductor device having improved safe operating areas and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-10347715-B2
Application number	US-201715648062-A
Country	US
Kind code	B2
Filing date	Jul 12, 2017
Priority date	Nov 10, 2016
Publication date	Jul 9, 2019
Grant date	Jul 9, 2019

Abstract

A semiconductor device includes a drift layer formed of a first conductive type semiconductor material, a MOSFET part including a p-type base layer provided on a front surface of the drift layer, a first n-type buffer layer provided on a reverse side of the drift layer, and a second n-type buffer layer provided on a reverse side of the first n-type buffer layer and having a high impurity concentration. The first n-type buffer layer has a higher impurity concentration than the drift layer and has a total amount of electrically active impurities per unit area of 1.0×1012 cm−2 or less.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a drift layer formed of a first conductive type semiconductor material;
a MOSFET part provided on a front surface of the drift layer and comprising a second conductive type semiconductor layer that forms a pn junction with the drift layer;
a first buffer layer provided on a reverse side of the drift layer, having the first conductive type, having a higher impurity concentration than the drift layer and having a total amount of electrically active impurities per unit area of 1.0×10 12 cm −2 or less; and
a second buffer layer provided on a reverse side of the first buffer layer, having the first conductive type and having a higher impurity concentration than the first buffer layer,
wherein
the second buffer layer includes impurities selected from the group of phosphor, arsenic and nitrogen, and a total amount of electrically active impurities per unit area of the second n-type buffer layer is set so as to fall within a range of 7×10 11 cm −2 to 1.4×10 12 cm −2 .

2. The semiconductor device according to claim 1 , wherein the total amount of electrically active impurities per unit area of the first buffer layer is 4.5×10 11 cm −2 or more.

3. The semiconductor device according to claim 1 , wherein the semiconductor material is silicon,
a dopant of the first buffer layer is protons, and
a dopant of the second buffer layer is phosphor or arsenic.

4. The semiconductor device according to claim 1 , wherein the semiconductor material is silicon carbide,
a dopant of the first buffer layer is protons, and
a dopant of the second buffer layer is nitrogen.

5. The semiconductor device according to claim 1 , further comprising a collector layer that is provided on a reverse side of the second buffer layer and has the second conductive type.

6. The semiconductor device according to claim 5 , further comprising a peripheral portion provided around the MOSFET part on the front surface of the drift layer,
wherein the collector layer is provided in a region directly below the MOSFET part and in a region directly below the peripheral portion on the reverse side of the second buffer layer, and has the second conductive type, and
an impurity concentration of the collector layer in the region directly below the peripheral portion is lower than an impurity concentration of the collector layer in the region directly below the MOSFET part.

7. The semiconductor device according to claim 5 , further comprising a peripheral portion provided around the MOSFET part on the front surface of the drift layer,
wherein the collector layer has the second conductive type, is provided in a region directly below the MOSFET part on the reverse side of the second buffer layer and is not provided in a region directly below the peripheral portion on the reverse side of the second buffer layer.

8. A semiconductor device comprising:
a drift layer formed of a first conductive type semiconductor material;
a cell part provided on a front surface of the drift layer;
a peripheral portion provided around the cell part on the front surface of the drift layer;
a first buffer layer that is provided on a reverse side of the drift layer and has the first conductive type, the first buffer layer extending beneath the cell part and the peripheral portion;
a second buffer layer that is provided on the reverse side of the drift layer and has the first conductive type, the second buffer layer extending beneath the cell part and the peripheral portion, and the second buffer layer having a higher impurity concentration than the first buffer layer; and
a collector layer that is provided so as to extend over a region directly below the cell part and a region directly below the peripheral portion on a reverse side of the second buffer layer, and has a second conductive type, whose impurity concentration in a region directly below the peripheral portion is lower than an impurity concentration in a region directly below the cell part,
wherein
the second buffer layer includes impurities selected from the group of phosphor, arsenic and nitrogen, and a total amount of electrically active impurities per unit area of the second n-type buffer layer is set so as to fall within a range of 7×10 11 cm −2 to 1.4×10 12 cm −2 .

9. The semiconductor device according to claim 8 ,
wherein the peripheral portion comprises a gate wiring part provided next to the cell part on the front surface of the drift layer and a withstand voltage holding part provided further next to the gate wiring part, and
the collector layer is provided so as to extend over a region directly below the gate wiring part and a region directly below the withstand voltage holding part on the reverse side of the buffer layer, whose impurity concentrations in a region directly below the gate wiring part and in a region directly below the withstand voltage holding part are lower than an impurity concentration in a region directly below the cell part.

Assignees

• Mitsubishi Electric Corp

Inventors

• Suzuki Kenji
• Takahashi Tetsuo
• Kaneda Mitsuru
• Kamibaba Ryu
• Nishi Koichi

Classifications

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21 Primary

  of electrically active species · CPC title

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/222

  characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221) · CPC title