Production of an integrated circuit including electrical contact on SiC

Patent metadata

Field	Value
Publication number	US-10347490-B2
Application number	US-201715443603-A
Country	US
Kind code	B2
Filing date	Feb 27, 2017
Priority date	Oct 25, 2006
Publication date	Jul 9, 2019
Grant date	Jul 9, 2019

Abstract

Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor component, comprising:
forming a layer comprising silicon on a surface of an SiC substrate;
forming a metal layer on the layer comprising silicon; and
irradiating a layer structure comprising the metal layer and the layer comprising silicon with a laser pulse to form a metal silicide by thermal action on a boundary surface to the SiC substrate, wherein the layer comprising silicon is the metal silicide.

2. The method of claim 1 , wherein
a thickness of the layer structure is in a range from 10 nm to 50 nm.

3. The method of claim 1 , wherein
the metal layer comprises at least one of nickel, molybdenum, cobalt and titanium.

4. The method of claim 1 , wherein
the layer comprising silicon comprises at least one of polycrystalline silicon and amorphous silicon.

5. The method of claim 1 , wherein
the layer comprising silicon comprises polysilicon and the metal layer comprises nickel.

6. The method of claim 1 , wherein
carbon deposits are formed at a boundary surface to the SiC substrate.

7. The method of claim 1 , wherein
carbon deposits are formed spaced apart from a contact metal.

8. The method of claim 1 , wherein
a pulse energy of the laser pulse is in a range from 0.5 J/cm 2 to 8 J/cm 2 .

9. The method of claim 1 , wherein
a pulse duration of laser pulse is in a range from 20 ns to 2000 ns.

10. The method of claim 1 , wherein
the semiconductor component is one of a SiC Schottky diode, an SiC MOSFET and an SiC-JFET.

11. The method of claim 1 , wherein
the semiconductor component is a vertical SiC component.

12. The method of claim 1 , further comprising:
forming a component-specific structure that comprises well zones at a front side of the SiC substrate.

13. The method of claim 1 , wherein
the layer structure is formed on a rear side of the SiC substrate.

14. The method of claim 1 , wherein
elements of the semiconductor component are formed in or on the SiC substrate before forming the layer structure.

15. The method of claim 14 , further comprising
thinning the SiC substrate from a rear side after forming the elements of the semiconductor component and before forming the layer structure.

16. The method of claim 15 , wherein
the layer structure is formed on the rear side of the SiC substrate after the thinning.

17. The method of claim 15 , wherein
after the thinning a substrate thickness of the SiC substrate is less than 150 μm.

18. A method of manufacturing a semiconductor component, comprising:
forming a layer comprising silicon on a surface of an SiC substrate;
forming a metal layer on the layer comprising silicon; and
irradiating a layer structure comprising the metal layer and the layer comprising silicon with a laser pulse to form a metal silicide by thermal action on a boundary surface to the SiC substrate, wherein the layer structure comprises the metal silicide.

19. A method of manufacturing a semiconductor component, comprising:
forming a metal silicide layer on a surface of an SiC substrate;
forming a metal layer on the metal silicide layer; and
irradiating a layer structure comprising the metal silicide layer with a laser pulse to form the metal silicide by thermal action on a boundary surface to the SiC substrate.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Rupp Roland
• Gutt Thomas
• Treu Michael

Classifications

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3454

  Amorphous · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10D64/0115

  to silicon carbide · CPC title